Product specification MMBV3401 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ■ Features 0.4 3 0.34Ω (Typ) @ IF = 10 mAdc 1 0.55 ● Very Low Series Resistance at 100 MHz +0.1 1.3-0.1 +0.1 2.4-0.1 ● Low Capacitance ? 0.7 pF (Typ) at V R = 20 Vdc 2 +0.1 0.95-0.1 +0.1 1.9-0.1 1 Anode 0-0.1 3 Cathode +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 ■ Absolute Maximum Ratings Ta = 25℃ Symbol Rating Unit Continuous reverse voltage Parameter VR 35 V Continuous forward current IF 200 mA Power Dissipation @ TA = 25℃ Ptot 200 mW Junction Temperature TJ 125 ℃ Tstg -55 to +150 ℃ Storage Temperature Range ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test conditons Min Typ Max Unit Reverse voltage VR IR = 10 μA Reverse current IR VR = 25 V 100 nA Series Resistance RS IF =10mA,f=100MHz 0.7 Ω Total Capacitance CT VR =20V,f=1MHz 1.0 pF 35 V ■ Marking Marking 4D http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Product specification MMBV3401 ■ Typical Characteristics 50 1.4 I F , FORWARD CURRENT (mA) R S , SERIES RESISTANCE (OHMS) 1.6 1.2 TA = 25°C 1.0 0.8 0.6 0.4 40 30 TA = 25°C 20 10 0.2 0 0 2.0 4.0 6.0 8.0 10 12 14 0 0.5 16 0.7 0.8 0.9 1.0 +100 +140 VF, FORWARD VOLTAGE (VOLTS) Figure 1. Series Resistance Figure 2. Forward Voltage 100 20 40 10 7.0 5.0 I R , REVERSE CURRENT (µ A) C T , DIODE CAPACITANCE (pF) 0.6 IF, FORWARD CURRENT (mA) TA = 25°C 2.0 1.0 0.7 0.5 10 4.0 VR = 25 Vdc 1.0 0.4 0.1 0.04 0.01 0.004 0.2 +3.0 0 −3.0 −6.0 −9.0 −12 −15 −18 −21 −24 −27 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Diode Capacitance http://www.twtysemi.com [email protected] 0.001 −60 −20 0 +20 +60 TA, AMBIENT TEMPERATURE (°C) Figure 4. Leakage Current 4008-318-123 2 of 2