Product specification 2SC2780 SOT-89 Unit:mm 1.50 ±0.1 4.50±0.1 1.80±0.1 ■ Features 2.50±0.1 4.00±0.1 ● High Collector-emitter voltage. ● Complements to PNP type 2SA1173 0.53±0.1 0.80±0.1 3 0.44±0.1 0.40±0.1 0.48±0.1 2 2.60±0.1 1 3.00±0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-base voltage VCBO 140 V Collector-emitter voltage VCEO 140 V Emitter-base voltage VEBO 5 V IC 50 mA Collector current 2.5 A PC 0.5 W PC *2 2 W ICP * Collector power dissipation 1 Junction temperature Tj 150 ℃ Storage temperature Tstg -55 to +150 ℃ *1. Pw≤10ms,duty cycle ≤50% *2. When mounted on ceramic substrate of 16cm2 × 0.7mm ■ Electrical Characteristics Ta = 25℃ Max Unit Collector cutoff current Parameter Symbol ICBO VCB=140V Test conditons Min 0.1 μA Emitter cutoff current IEBO VEB=5V 0.1 μA DC current gain hFE VCE=10V,IC=1mA 50 VCE=10V,IC=10mA 90 Typ 180 400 Collector-emitter saturation voltage VCE(sat) IC=20mA,IB=2mA 0.07 0.6 Base saturation voltage VBE(sat) IC=20mA,IB=2mA 0.75 1.0 Transition frequency fT Output capacitance Cob V V VCE=10V, IE= -10mA 120 MHz VCB=10V, IE=0A, f=1MHz 2.3 pF ■ hFE Classification Marking NM NL NK hFE 82～180 120～270 180～390 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1