WILLAS SGFM101C-D2

FM120-M+
SGFM101C-D2
WILLAS
THRU THRU
10.0A SURFACE MOUNT SUPER FAST RECTIFIERS -50V- 600V
1.0A SURFACE MOUNT SCHOTTKY BARRIER
D2PAK RECTIFIERS
PACKAGE -20V- 200V
SOD-123+ PACKAGE
FM1200-M+
SGFM108C-D2
Pb Free Produc
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
Package outline
Features
• Low profile surface mounted application in order to
optimize board space.
Low power loss, high efficiency.
design, excellent power dissipation offers
• Batch •process
High current
capability,
low thermal
forward resistance.
voltage drop.
better •reverse
leakage
current and
High
surge
capability.
•
• Low profile surface mounted application in order to
for overvoltage protection.
• Guardring
optimize
board space..
• High current
high-speed switching.
• Ultra capability.
• Super •fast
reovery
time for
switching
mode silicon
application.
Silicon
epitaxial
planar
chip, metal
junction.
• High surge
currentparts
capability.
meet environmental standards of
• Lead-free
MIL-STD-19500
/228
• Glass passivated
chip junction.
product
packing codestandards
suffix "G" of
• RoHS
• Lead-free
parts
meetfor
enironmental
D2PAK
0.402(10.20)
0.386(9.80)
0.046(1.20)
0.032(0.80)
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.185(4.70)
0.169(4.30)
0.055(1.40 )
0.047(1.20)
Halogen free product for packing code suffix "H"
MIL-STD-19500/228
Mechanical data
0.370(9.40)
0.354(9.00)
• Epoxy : UL94-V0 rated flame retardant
plastic, SOD-123H
• Case : Molded
Mechanical
data
,
•
Terminals
:Plated
terminals,
solderable per MIL-STD-750
retardant
• Epoxy:UL94-V0 rated flame
)
0.040(1.0)
0.012(0.30
)
0.024(0.6)
0.004(0.10
0.031(0.8) Typ.
0.192(4.8)
0.176(4.4)
0.024(0.60)
0.016(0.40) 0.031(0.8) Typ.
0.063(1.60)
0.055(1.40)
0.108( 2.70)
Method 2026
• Case : Molded plastic, TO-263 / D2PAK
• Polarity : Indicated by cathode band
• Terminals : Solder plated, solderable per
Position :Method
Any
• Mounting
MIL-STD-750,
2026
•
Weight
:
Approximated
0.011
• Polarity : Indicated by cathode band gram
0.205(5.20)
0.189(4.80)Dimensions
0.092( 2.30)
in inches and (millimeters)
Dimensions in inches and (millimeters)
: Any
• Mounting Position
MAXIMUM
RATINGS AND ELECTRICAL CHARACTERISTICS
• Ratings
Weight : Approximated 1.46 gram
at 25℃ ambient temperature unless otherwise specified.
Pb-Free package is available
• Single
phase half wave, 60Hz, resistive of inductive load.
RoHS product for packing code suffix ”G”
Halogen free product for packing code suffix “H”
For capacitive load, derate current by 20%
RATINGS
PIN 1
Marking Code
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
14
40
15
50
16
60
18
80
10
100
115
150
120
200
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
150
200
Maximum DC Blocking
Voltage
Maximum
ratings
20
30
40
and ElectricalVDC
Characteristics
(AT
O
Forward
current
Peak
Forward rectified
Surge Current
8.3 ms single halfAmbient
sine-wavetemperature = 50 C
IFSM
superimposed on rated load (JEDEC method) 8.3ms single half sine-wave superimposed on
Forward surge current
rate load (JEDEC
Typical Thermal Resistance (Note 2)
RΘJA methode)
Storage
Temperature
Range
Diode
junction capacitance
Maximum Forward Voltage at 1.0A DC
*1
*2
*3
(V)
(V)@T A=125℃
SGFM101C-D2
50
35
50
SGFM102C-D2
100
70
100
SGFM104C-D2
200
140
200
VF
*4
V
IR F
(V)
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
I FSM
IR
TYP.
40
120
MAX.
UNIT
10.0
A
150
A
10
-55 to +150
50
C J - 65 to +175 80
-65
µA
pF
+175
O
C
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
V RMS
VR
V RRM
SYMBOLS
Maximum
Average Reverse
Current at
@T A=25℃
NOTES:
Symbol 1.0
MIN.
IO
30
T STG
CHARACTERISTICS
Rated DC Blocking Voltage(V)
-55 to +125
f=1MHz andTSTG
applied 4V DC reverse voltage
Storage temperature
o
V R = V RRM T J C=J 25 OC
V R = V RRM T J T=J 125 OC
Reverse
current Range
Operating
Temperature
50 C unless
60 otherwise
80 noted)
100
T A =25
IO CONDITIONS
Maximum Average
Forward Rectified Current
PARAMETER
Typical Junction Capacitance (Note 1)
PIN 2
FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
SYMBOL FM120-MH FM130-MH FM140-MH
PIN FM150-MH
3
2- Thermal Resistance From Junction to Ambient
*5
t rr
(ns)
0.50
Operating
temperature
T J, ( OC)
35
SGFM106C-D2
400
280
400
1.30
600
420
600
1.70
0.92
10voltage
*2 RMS
*3 Continuous reverse voltage
0.975
SGFM108C-D2
0.9
0.70
0.85
*1 Repetitive peak reverse voltage
0.5
-55 to +150
*4 Maximum forward [email protected] F =5.0A
*5 Reverse recovery time, note 1
Note 1. Reverse recovery time test condition, I F =0.5A, I R =1.0A, I RR =0.25A
2012-09
2012-06
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
SGFM101C-D2
THRU THRU
10.0A SURFACE MOUNT SUPER FAST RECTIFIERS -50V- 600V
1.0A SURFACE MOUNT SCHOTTKY BARRIER
D2PAK RECTIFIERS
PACKAGE -20V- 200V
SOD-123+ PACKAGE
FM1200-M+
SGFM108C-D2
Pb Free Product
Package outline
Rating
and characteristic
curves
dissipation
offers
• Batch process design, excellent power
Features
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
2
Mechanical data
FIG. 2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE 0.146(3.7)
CURRENT
PEAK FORWARD SURGE CURRENT,(A)
AVERAGE FORWARD CURRENT
AMPERES
optimize
board CURRENT
space.
FIG.1
- FORWARD
DERATING CURVE
• Low power loss, high efficiency.
12 • High current capability, low forward voltage drop.
• High surge capability.
10
• Guardring for overvoltage protection.
• Ultra high-speed switching.
8
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
6 MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
4 Halogen free product for packing code suffix "H"
0.130(3.3)
150
0.012(0.3) Typ.
120
0.071(1.8)
0.056(1.4)
90
8.3ms Single Half
TJ=25 C
Sine Wave
60
JEDEC method
30
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
0
0 • Case25: Molded
50 plastic,
75 SOD-123H
100
125
150
1
,
AMBIENT
TEMPERATURE,(
°C)
• Terminals
:Plated
terminals, solderable
per MIL-STD-750
0.031(0.8)5Typ.
50
10
0.031(0.8) Typ.
NUMBER OF CYCLES AT 60Hz
100
Dimensions in inches and (millimeters)
O
SGFM101C-D2 , SGFM102C-D2
SGFM104C-D2
Single phase
half wave, 60Hz, resistive of inductive load.
SGFM106C-D2
For capacitive load, derate current by 20%
1.0
RATINGS
Maximum Recurrent Peak Reverse Voltage
0.1 RMS Voltage
SGFM108C-D2
Maximum
VRRM
12
20
VRMS
14
Maximum DC Blocking Voltage
VDC
20
pulse width=300us
1% duty cycle
IO
IFSM
INSTANTANEOUS
FORWARD
VOLTAGE, VOLTS
superimposed
on rated load (JEDEC
method)
Maximum
0.01 Average Forward Rectified Current
0.4 0.6
0.8 1.0
1.2
1.4 1.6 1.8
Peak Forward Surge Current 8.3 ms single half sine-wave
Storage Temperature Range
TSTG
VF
Maximum Average Reverse Current at @T A=25℃
@T A=125℃
Rated DC Blocking Voltage
15
50
16
60
18
80
210.1
28
30
40
10
100
115
150
120
200
T J =25°C
35
42
50
60
56
70
105
140
80
100
150
200
1.0
0.01
0
20
60 40
80
100
120
140
40
120
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Forward Voltage at 1.0A DC
100
14
40
-55 to +125
-55 to +150
FIG. 6 - TEST CIRCUIT DIAGRAM AND REVERSE
65
to
+175
RECOVERY TIME CHARACTERISTIC
140
CHARACTERISTICS
13
30
OperatingFIG.
Temperature
Range
TJ
5 - TYPICAL
JUNCTION CAPACITANCE
JUNCTION CAPACITANCE,(pF)
T J =100°C
CJ
Typical Junction Capacitance (Note 1)
120
Maximum
10
30
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)
RΘJA
Typical Thermal Resistance (Note 2)
50W
NONINDUCTIVE
0.5010W
NONINDUCTIVE
0.70
|
|
|
|
|
|
|
|
+0.5A
( )
NOTES:
25Vdc
(approx.)
160 Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
( )
D.U.T.
1W
NONINDUCTIVE
0.92
trr
10
(+)
2- Thermal Resistance From Junction to Ambient
0.9
0.85
0.5
IR
80
100
1 FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
SYMBOL FM120-MH FM130-MH
Marking Code
FIG. 4 - TYPICAL INSTANTANEOUS REVERSE
CHARACTERISTICS
T J =125°C
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
10 at 25℃ ambient temperature unless otherwise specified.
Ratings
INSTANTANEOUS REVERSE CURRENT,
uAMPERES
INSTANTANEOUS FORWARD CURRENT,
AMPERES
Method 2026
• Polarity : Indicated by cathode band
FIG. 3 - TYPICAL INSTANTANEOUR FORWARD
Position : Any
• Mounting CHARACTERISTICS
• Weight
TJ=25 C: Approximated 0.011 gram
PULSE
GENERATOR
(NOTE 2)
(+)
0
-0.25A
OSCILLISCOPE
(NOTE 1)
40
-1.0A
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
20
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
1cm
SET TIME BASE FOR
50 / 10ns / cm
0
.01
.05
.1
.5
1
5
10
50
100
REVERSE VOLTAGE,(V)
2012-06
2012-09
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
SGFM101C-D2
THRU THRU
10.0A SURFACE MOUNT SUPER FAST RECTIFIERS -50V- 600V
1.0A SURFACE MOUNT SCHOTTKY BARRIER
D2PAK RECTIFIERS
PACKAGE -20V- 200V
SOD-123+ PACKAGE
FM1200-M+
SGFM108C-D2
Pb Free Product
Package outline
Pinning
information
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Simplified outline
• Low profile surface mounted application in order to
Symbol
optimize board space.
SOD-123H
2
2
efficiency.
• Low power loss, high
• High current capability, low forward voltage drop.
1
3
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
1
0.012(0.3) Typ.
3
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Marking
Halogen free product for packing code suffix "H"
Mechanical
Type
number data
Marking code
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
SGFM101C-D2
SF101C
• Case : Molded plastic, SOD-123H
SGFM102C-D2
SF102C ,
• Terminals :Plated terminals, solderable per MIL-STD-750
SGFM104C-D2
Method 2026
SGFM106C-D2
• Polarity : Indicated by cathode band
SGFM108C-D2
0.031(0.8) Typ.
SF104C
SF106C
SF108C
• Mounting Position : Any
• Weight : Approximated 0.011 gram
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
Suggested solder pad layout
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Marking Code
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
Maximum RMS Voltage
VRMS
14
21
28
Maximum DC Blocking Voltage
VDC
20
30
40
Maximum Average Forward Rectified Current
IO
IFSM
Peak Forward Surge Current 8.3 ms single halfX1sine-wave
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
Y1
TJ
Storage Temperature Range
TSTG
L
C
CHARACTERISTICS
VF
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
X2
Y2
@T A=125℃
NOTES:
PACKAGE
C
E
-55 to +125
L
15
50
16
60
18
80
10
100
115
150
120
200
35
42
50
60
56
70
105
140
80
100
150
200
1.0
D2PAK 30
0.374(9.50)
40
0.098(2.50)
120
0.665(16.90)
X1
- 65 to +175
0.425(10.80)
X2
0.071(1.80)
-55 to +150
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Maximum Forward Voltage at 1.0A DC
14
40
E
IR
Y1
0.50
Y2
0.449(11.40)
0.70
0.138(3.50)
0.5
0.85
0.9
0.92
10
Dimensions in inches and (millimeters)
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-09
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.