WILLAS FM120-M+ SEMFxxCTHRU 5-Line Transient Voltage Suppressor Array FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H profile surface mounted application in order to Features • Low General Description optimize board space. loss, highdesigned efficiency. to low voltage, • Low power The Standard TVS are • High current capability, low forward voltage drop. integrated from transients caused by surge capability. • Highcircuits for overvoltage protection. • Guardring electrostatic discharge (ESD), electrical fast • Ultra high-speed switching. transients (EFT)epitaxial and other induced voltages. planar chip, metal silicon junction. • Silicon • Lead-free parts meet environmental standards of MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Applications Halogen free product for packing code suffix "H" z 100 W Peak Pulse Power per 0.146(3.7) Line (tp=8/20μs) z Monolithic Structure z Low Clamping Voltage 0.130(3.3) 0.012(0.3) Typ. z ESD Protection > 40 kilovolts 0.071(1.8) 0.056(1.4) z Low Leakage Current z Protects up to Four (4) Bidirectional Lines and Five(5) Unidirectional Lines z Pb-Free package is available RoHS product for packing code suffix ”G” z Computer Notebooks Mechanical data 0.040(1.0) z Communication Systems & Cellular Phones 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant Halogen free product for packing code suffix “H” z Printers • Case : Molded plastic, SOD-123H 0.031(0.8) Typ. 0.031(0.8) Typ. , z Personal Digital:Plated Assistant(PDA) • Terminals terminals, solderable per MIL-STD-750 Complies with the following standards z Video Equipment Method 2026 IEC61000-4-2 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Level 4 Dimensions in inches and (millimeters) 15 kV (air discharge) 8 kV(contact discharge) MIL STD 883E - Method 3015-7 Class 3 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 25 kV HBM (Human Body Model) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% Functional Diagram RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 V Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 V Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 V Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) SOT-363 Typical Junction Capacitance (Note 1) CJ TJ Operating Temperature Range Storage Temperature Range 1.0 30 A A 40 120 -55 to +125 ℃ -55 to +150 - 65 to +175 TSTG CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U VF Maximum Forward Voltage at 1.0A DC 0.50 Absolute Ratings @ 25℃ Otherwise Specified Maximum Average Reverse Current at @T Unless A=25℃ Rated DC Blocking Voltage Symbol IR Parameter 0.9 0.5 10 Value Units Watts -55℃ to 150 ℃ ℃ 2- Thermal Resistance From Junction to Ambient -55℃ to 150℃ ℃ 2012-09 2012-06 Storage Temperature 0.92 V 100 TSTG Peak Pulse Power (tp=8/20μs)See Figure 1 0.85 1- Measured T atJ1 MHZ and applied reverse voltage of 4.0 VDC. Operating Temperature NOTES: PPP @T A=125℃ 0.70 m WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ SEMFxxCTHRU FM1200-M+ 5-Line Transient Voltage Suppressor Array 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Electrical Parameter Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Symbol Parameter application in order to • Low profile surface mounted optimize board space. IPP Maximum Reverse Peak Pulse Current • Low power loss, high efficiency. capability, low forward V•CHigh current Clamping Voltage @ IPP voltage drop. • High surge capability. VRWM Working Peak Reverse Voltage for overvoltage protection. • Guardring • Ultra high-speed Maximumswitching. Reverse Leakage Current @ IR• Silicon epitaxial planar chip, metal silicon junction. VRWM • Lead-free parts meet environmental standards of IT MIL-STD-19500 Test Current /228 RoHS product for packing code suffix • VBR Breakdown Voltage @ IT"G" 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Halogen free product for packing code suffix "H" IFMechanical Forward Current data 0.040(1.0) 0.024(0.6) UL94-V0 rated flame V•F Epoxy :Forward Voltage @retardant IF • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.031(0.8) Typ. Electrical Characteristics Method 2026 • Polarity : Indicated by cathode band VBR • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) C IT VRWM Part Numbers Min. Typ. Max. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. V V load. V Single phase half wave, 60Hz, resistive of inductive For capacitive load, derate current SEMF3V3C 5.3by 20% 5.6 5.88 SEMF05C RATINGS Marking Code 6.1 6.7 bias mA V µA pF 1 3.3 1.0 50 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U 7.2 Maximum RMS Voltage VRMS 14 21 28 35 42 56 Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 Maximum Average Forward Rectified Current IO IFSM Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 16 60 18 80 10 100 35 115 150 120 200 V 70 105 140 V 100 150 200 V 1.0 30 RΘJA Typical Thermal Resistance (Note 2) 15 50 5 VRRM superimposed on rated load (JEDEC method) 14 40 5.0 Maximum Recurrent Peak Reverse Voltage Peak Forward Surge Current 8.3 ms single half sine-wave Typical Characteristics 13 30 1 12 20 Typ. 0v IR 40 120 -55 to +125 A A ℃ -55 to +150 - 65 to +175 TSTG CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.5 0.9 0.92 V 10 m NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient Fig1. Non-Repetitive Peak Pulse Power vs. Pulse Time 2012-09 2012-06 Fig2. Power Derating Curve WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ SEMFxxCTHRU 5-Line Transient Voltage Suppressor Array FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant Fig3. Pulse Waveform plastic, SOD-123H • Case : Molded , • Terminals :Plated terminals, solderable per MIL-STD-750 Fig4. Clamping Voltage vs. Peak Pulse0.031(0.8) Current 0.031(0.8) Typ. Typ. Method 2026 SOT-363 Mechanical Data • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram .004(0.10)MIN. Dimensions in inches and (millimeters) .054(1.35) .045(1.15) .087(2.20) .071(1.80) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U Maximum Recurrent Peak Reverse Voltage.030(0.75) .021(0.55) Maximum RMS Voltage Maximum DC Blocking Voltage .056(1.40) .047(1.20) Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) .004(0.10)MAX. Typical Thermal Resistance (Note 2) VRRM 12 20 Storage Temperature Range CHARACTERISTICS 56 70 80 100 21 20 30 40 16 60 50 IO IFSM 18 80 10 100 115 150 120 200 V 105 140 V 150 200 V 1.0 30 RΘJA 40 120 -55 to +125 A A ℃ -55 to +150 - 65 to +175 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U VF Maximum Forward Voltage at 1.0A DC 42 60 14 VDC .016(0.40) TSTG .004(0.10) 14 15 40 .010(0.25) 50 VRMS TJ Operating Temperature Range 13 30 28 .003(0.08) 35 CJ Typical Junction Capacitance (Note 1) Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage .096(2.45) RATINGS Marking Code .043(1.10) .032(0.80) .071(1.80) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% 0.50 0.70 0.85 0.5 IR @T A=125℃ Dimensions in inches and (millimeters) 0.9 0.92 V 10 m NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. Marking 2- Thermal Resistance From Junction to Ambient Type number SEMF3V3C SEMF05C 2012-09 2012-06 Marking code WC WF WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP.