ONSEMI 2N3819

2N3819
JFET VHF/UHF Amplifier
N–Channel – Depletion
MAXIMUM RATINGS
Rating
http://onsemi.com
Symbol
Value
Unit
Drain–Source Voltage
VDS
25
Vdc
Drain–Gate Voltage
VDG
25
Vdc
Gate–Source Voltage
VGS
25
Vdc
ID
100
mAdc
Forward Gate Current
IG(f)
10
mAdc
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
PD
350
2.8
mW
mW/°C
Storage Channel Temperature Range
Tstg
–65 to +150
°C
Drain Current
3 DRAIN
2
GATE
1 SOURCE
1
2
3
TO–92
CASE 29
STYLE 22
MARKING DIAGRAM
2N
3819
YWW
2N3819 = Device Code
Y
= Year
WW
= Work Week
ORDERING INFORMATION
Device
2N3819
 Semiconductor Components Industries, LLC, 2002
March, 2002 – Rev. 0
1
Package
Shipping
TO–92
5000 Units/Box
Publication Order Number:
2N3819/D
2N3819
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Gate–Source Breakdown Voltage
(IG = 1.0 µAdc, VDS = 0)
V(BR)GSS
25
–
–
Vdc
Gate–Source
(VDS = 15 Vdc, ID = 200 µAdc)
VGS
0.5
–
7.5
Vdc
Gate–Source Cutoff Voltage
(VDS = 15 Vdc, ID = 10 nAdc)
VGS(off)
–
–
–8.0
Vdc
IGSS
–
–
210
nAdc
IDSS
2.0
–
20
mAdc
OFF CHARACTERISTICS
Gate Reverse Current
(VGS = 15 Vdc, VDS = 0)
ON CHARACTERISTICS
Zero–Gate–Voltage Drain Current
(VDS = 15 Vdc, VGS = 0)
SMALL–SIGNAL CHARACTERISTICS
Forward Transfer Admittance
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
Yfs
3.0
–
6.5
mmhos
Output Admittance
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
Yos
–
40
–
mhos
Forward Transfer Admittance
(VDS = 15 Vdc, VGS = 0, f = 200 MHz)
Yfs
–
5.6
–
mmhos
Reverse Transfer Admittance
(VDS = 15 Vdc, VGS = 0, f = 200 MHz)
Yrs
–
1.0
–
mmhos
(VDS = 20 Vdc, –VGS = 1.0 Vdc)
Ciss
–
3.0
–
pF
Input Capacitance
Reverse Transfer Capacitance
(VDS = 20 Vdc, –VGS = 1.0 Vdc, f = 1.0 MHz)
Crss
–
0.7
–
pF
Output Capacitance
(VDS = 20 Vdc, –VGS = 1.0 Vdc, f = 1.0 MHz)
Coss
–
0.9
–
pF
(VDS = 15 Vdc, VGS = 0)
F(Yfs)
–
700
–
MHz
Cut–off Frequency (Note 1)
1. The frequency at which gfs is 0.7 of its value at 1 kHz.
http://onsemi.com
2
2N3819
COMMON SOURCE CHARACTERISTICS
30
20
bis @ IDSS
10
7.0
5.0
3.0
gis @ IDSS
2.0
gis @ 0.25 IDSS
1.0
0.7
0.5
0.3
10
bis @ 0.25 IDSS
20
30
50 70 100
200 300
f, FREQUENCY (MHz)
grs , REVERSE TRANSADMITTANCE (mmhos)
brs , REVERSE SUSCEPTANCE (mmhos)
gis, INPUT CONDUCTANCE (mmhos)
bis, INPUT SUSCEPTANCE (mmhos)
ADMITTANCE PARAMETERS
(VDS = 15 Vdc, Tchannel = 25°C)
500 700 1000
5.0
3.0
2.0
brs @ IDSS
1.0
0.7
0.5
0.25 IDSS
0.3
0.2
0.1
0.07
0.05
grs @ IDSS, 0.25 IDSS
10
20
50 70 100
200 300
f, FREQUENCY (MHz)
500 700 1000
10
10
7.0
5.0
gfs @ IDSS
gfs @ 0.25 IDSS
3.0
2.0
1.0
0.7
0.5
0.3
0.2
10
30
Figure 2. Reverse Transfer Admittance (yrs)
gos, OUTPUT ADMITTANCE (mhos)
bos, OUTPUT SUSCEPTANCE (mhos)
gfs, FORWARD TRANSCONDUCTANCE (mmhos)
|b fs|, FORWARD SUSCEPTANCE (mmhos)
Figure 1. Input Admittance (yis)
20
|bfs| @ IDSS
30
50 70 100
200 300
f, FREQUENCY (MHz)
bos @ IDSS and 0.25 IDSS
2.0
1.0
0.5
0.2
gos @ IDSS
0.1
0.05
|bfs| @ 0.25 IDSS
20
5.0
gos @ 0.25 IDSS
0.02
500 700 1000
0.01
10
Figure 3. Forward Transadmittance (yfs)
20
30
50 70 100
200 300
f, FREQUENCY (MHz)
500 7001000
Figure 4. Output Admittance (yos)
http://onsemi.com
3
2N3819
COMMON SOURCE CHARACTERISTICS
S–PARAMETERS
(VDS = 15 Vdc, Tchannel = 25°C, Data Points in MHz)
30°
20°
10°
0°
1.0
40°
350°
340°
400
300
0.8
320°
40°
310°
50°
20°
10°
0°
350°
340°
330°
0.4
300
200
0.9
30°
32
200
100
50°
330°
ID = 0.25 IDSS
100
ID = IDSS
0.3
ID = IDSS, 0.25 IDSS
500
31
900
800
0.2
300°
60°
290°
70°
280°
80°
270°
90°
100°
260°
100°
26
110°
250°
110°
25
120°
240°
120°
24
130°
230°
130°
23
140°
220°
140°
22
60°
400
500
0.7
70°
600
80°
0.6
90°
900
150°
160°
170°
180°
800
190°
700
800
700
900
200°
600
600
210°
20°
10°
0°
350°
340°
300
0.5
900
70°
80°
90°
100°
110°
120°
800
700
600
500
0.4
900
800
700
600
500
0.3
100
400
400
0.3
ID = 0.25 IDSS
300
200
0.4
100
0.5
300
ID = IDSS
200
28
0.0
200
27
100
150°
330°
0.6
60°
29
160°
170°
180°
190°
200°
210°
Figure 6. S12s
40°
50°
0.1
500
400
Figure 5. S11s
30°
30
700
130°
30°
20°
10°
0°
350°
340°
330°
100 200
I
=
0.25
IDSS
D
300
1.0
400
100 200
500
300
600
400
700
0.9
500
800
600
ID = IDSS
700
900
800
900
0.8
320°
40°
310°
50°
300°
60°
290°
70°
280°
80°
270°
90°
27
260°
100°
26
250°
110°
25
240°
120°
24
230°
130°
23
220°
140°
22
0.7
32
31
30
29
28
0.6
0.6
140°
150°
160°
170°
180°
190°
200°
210°
150°
Figure 7. S21s
160°
170°
180°
190°
Figure 8. S22s
http://onsemi.com
4
200°
210°
2N3819
COMMON GATE CHARACTERISTICS
ADMITTANCE PARAMETERS
(VDG = 15 Vdc, Tchannel = 25°C)
10
7.0
5.0
grg , REVERSE TRANSADMITTANCE (mmhos)
brg , REVERSE SUSCEPTANCE (mmhos)
gig, INPUT CONDUCTANCE (mmhos)
big, INPUT SUSCEPTANCE (mmhos)
20
gig @ IDSS
3.0
grg @ 0.25 IDSS
2.0
1.0
0.7
0.5
big @ IDSS
0.3
0.2
10
20
30
big @ 0.25 IDSS
50 70 100
200 300
f, FREQUENCY (MHz)
500 700 1000
0.5
0.3
brg @ IDSS
0.2
0.1
0.07
0.05
0.25 IDSS
0.03
0.02
0.01
0.007
0.005
gig @ IDSS, 0.25 IDSS
10
10
7.0
5.0
gfg @ IDSS
3.0
gfg @ 0.25 IDSS
2.0
1.0
0.7
0.5
bfg @ IDSS
0.3
brg @ 0.25 IDSS
0.2
0.1
10
20
30
50 70 100
200 300
f, FREQUENCY (MHz)
30
50 70 100
200 300
f, FREQUENCY (MHz)
500 700 1000
Figure 10. Reverse Transfer Admittance (yrg)
gog, OUTPUT ADMITTANCE (mmhos)
bog, OUTPUT SUSCEPTANCE (mmhos)
gfg , FORWARD TRANSCONDUCTANCE (mmhos)
bfg , FORWARD SUSCEPTANCE (mmhos)
Figure 9. Input Admittance (yig)
20
500 700 1000
1.0
0.7
0.5
bog @ IDSS, 0.25 IDSS
0.3
0.2
0.1
0.07
0.05
gog @ IDSS
0.03
0.02
0.01
gog @ 0.25 IDSS
10
Figure 11. Forward Transfer Admittance (yfg)
20
30
50 70 100
200 300
f, FREQUENCY (MHz)
500 700 1000
Figure 12. Output Admittance (yog)
http://onsemi.com
5
2N3819
COMMON GATE CHARACTERISTICS
S–PARAMETERS
(VDS = 15 Vdc, Tchannel = 25°C, Data Points in MHz)
30°
20°
10°
0°
350°
340°
0.7
40°
100
100
200
200
0.5
300
300
60°
ID = IDSS
0.4
70°
400
700
400
500
310°
50°
300°
60°
290°
70°
280°
80°
600
900
260°
100°
110°
250°
110°
120°
240°
120°
130°
230°
130°
140°
30°
20°
180°
190°
0°
350°
100
600
ID = IDSS
700
600
700
800
29
28
0.0
27
26
ID = 0.25 IDSS
25
0.01
24
0.02
23
900
0.03
22
0.04
210°
150°
160°
340°
330°
30°
20°
170°
180°
190°
200°
210°
340°
330°
Figure 14. S12g
10°
40°
320°
0°
1.5
1.0
100
100
0.4
30
500
800
200°
0.5
40°
32
0.01
Figure 13. S11g
10°
330°
0.02
140°
220°
170°
340°
31
900
160°
350°
0.04
90°
270°
100°
150°
0°
800
900
90°
40°
10°
600
800
0.3
320°
20°
0.03
500
700
80°
30°
ID = 0.25 IDSS
0.6
50°
330°
350°
300
200
400
32
700
600
800
0.9
ID = IDSS
500
900
31
310°
50°
300°
60°
290°
70°
280°
80°
270°
90°
27
260°
100°
26
110°
250°
110°
25
120°
240°
120°
24
130°
230°
130°
23
140°
220°
140°
22
50°
100
0.3
60°
0.2
70°
80°
ID = 0.25 IDSS
0.1
900
90°
900
100°
150°
160°
170°
180°
190°
200°
210°
ID = IDSS, 0.25 IDSS
0.8
0.7
29
28
0.6
150°
Figure 15. S21g
30
160°
170°
180°
190°
Figure 16. S22g
http://onsemi.com
6
200°
210°
2N3819
PACKAGE DIMENSIONS
TO–92 (TO–226)
CASE 29–11
ISSUE AL
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
B
R
P
L
SEATING
PLANE
K
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
D
X X
G
J
H
V
C
SECTION X–X
1
N
N
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
--0.250
--0.080
0.105
--0.100
0.115
--0.135
---
STYLE 22:
PIN 1. SOURCE
2. GATE
3. DRAIN
http://onsemi.com
7
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
--6.35
--2.04
2.66
--2.54
2.93
--3.43
---
2N3819
ON Semiconductor is a trademark and
is a registered trademark of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right
to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products
for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any
and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must
be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death
may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
Literature Fulfillment:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada
Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada
Email: [email protected]
JAPAN: ON Semiconductor, Japan Customer Focus Center
4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031
Phone: 81–3–5740–2700
Email: [email protected]
ON Semiconductor Website: http://onsemi.com
For additional information, please contact your local
Sales Representative.
N. American Technical Support: 800–282–9855 Toll Free USA/Canada
http://onsemi.com
8
2N3819/D