ETC 2N5555/D

ON Semiconductor
1 DRAIN
JFET Switching
2N5555
3
GATE
N–Channel — Depletion
2 SOURCE
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDS
25
Vdc
Drain–Gate Voltage
VDG
25
Vdc
Gate–Source Voltage
VGS
25
Vdc
Forward Gate Current
IGF
10
mAdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
350
2.8
mW
mW/°C
Junction Temperature Range
TJ
–65 to +150
°C
Storage Temperature Range
Tstg
–65 to +150
°C
1
2
3
CASE 29–11, STYLE 5
TO–92 (TO–226AA)
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
V(BR)GSS
25
—
Vdc
Gate Reverse Current (VGS = 15 Vdc, VDS = 0)
IGSS
—
1.0
nAdc
Drain Cutoff Current (VDS = 12 Vdc, VGS = –10 V)
Drain Cutoff Current (VDS = 12 Vdc, VGS = –10 V, TA = 100°C)
ID(off)
—
—
10
2.0
nAdc
µAdc
IDSS
15
—
mAdc
VGS(f)
—
1.0
Vdc
Drain–Source On–Voltage
(ID = 7.0 mAdc, VGS = 0)
VDS(on)
—
1.5
Vdc
Static Drain–Source On Resistance
(ID = 0.1 mAdc, VGS = 0)
rDS(on)
—
150
Ohms
rds(on)
—
150
Ohms
Input Capacitance
(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
Ciss
—
5.0
pF
Reverse Transfer Capacitance
(VDS = 0, VGS = 10 Vdc, f = 1.0 MHz)
Crss
—
1.2
pF
(V
( DD = 10 Vdc,, ID(on) = 7.0 mAdc,,
0 VGS(off) = –10
10 Vdc)
Vd ) (See
(S Figure
Fi
VGS(on) = 0,
1)
td(on)
—
5.0
ns
tr
—
5.0
ns
( DD = 10 Vdc,, ID(on) = 7.0 mAdc,,
(V
VGS(on) = 0,
0 VGS(off) = –10
10 Vdc)
Vd ) (See
(S Figure
Fi
1)
td(off)
—
15
ns
tf
—
10
ns
OFF CHARACTERISTICS
Gate–Source Breakdown Voltage (IG = 10 µAdc, VDS = 0)
ON CHARACTERISTICS
Zero–Gate–Voltage Drain Current(1)
(VDS = 15 Vdc, VGS = 0)
Gate–Source Forward Voltage
(IG(f) = 1.0 mAdc, VDS = 0)
1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 3.0%.
SMALL–SIGNAL CHARACTERISTICS
Small–Signal Drain–Source “ON” Resistance
(VGS = 0, ID = 0, f = 1.0 kHz)
SWITCHING CHARACTERISTICS
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
 Semiconductor Components Industries, LLC, 2001
May, 2001 – Rev. 2
1
Publication Order Number:
2N5555/D
2N5555
PULSE WIDTH
VDD
1.0 k
PULSE
GENERATOR
(50 OHMS)
90%
50 OHM
COAXIAL
CABLE
TEKTRONIX
567
SAMPLING
SCOPE
10 k
50 OHM COAXIAL CABLE
1.0 k
INPUT
VGS(on)
90%
50%
10%
50%
10%
INPUT PULSE
RISE TIME
VGS(off)
INPUT PULSE
FALL TIME
Rin =
50 OHMS
50
td(off)
td(on)
OUTPUT
INPUT PULSE
RISE TIME < 1.0 ns
FALL TIME < 1.0 ns
NOMINAL VALUE OF ON" PULSE WIDTH = 400 ns
DUTY CYCLE ≤ 1.0%
GENERATOR SOURCE IMPEDANCE = 50 OHMS
10%
10%
90%
90%
tr
tf
Figure 1. Switching Times Test Circuit
POWER GAIN
24
f = 100 MHz
PG , POWER GAIN (dB)
20
16
12
400 MHz
Tchannel = 25°C
VDS = 15 Vdc
VGS = 0 V
8.0
4.0
2.0
0
4.0
6.0
8.0
10
ID, DRAIN CURRENT (mA)
12
14
Figure 2. Effects of Drain Current
NEUTRALIZING
COIL
INPUT
TO 50 Ω
SOURCE
C2
L1
C1
C4
Rg′
L3
C5
Adjust VGS for
ID = 50 mA
VGS < 0 Volts
*L2
*L3
TO 500 Ω
LOAD
L2
CASE
C6
C7
VGS
*L1
C3
NOTE:
COMMON
VDS
+15 V
ID = 5.0 mA
The noise source is a hot–cold body
(AIL type 70 or equivalent) with a
test receiver (AIL type 136 or equivalent).
**L1
17 turns, (approx. — depends upon circuit layout) AWG #28
enameled copper wire, close wound on 9/32″ ceramic coil
form. Tuning provided by a powdered iron slug.
4–1/2 turns, AWG #18 enameled copper wire, 5/16″ long,
3/8″ I.D. (AIR CORE).
3–1/2 turns, AWG #18 enameled copper wire, 1/4″ long,
3/8″ I.D. (AIR CORE).
**L2
**L3
100 MHz
400 MHz
C1
7.0 pF
1.8 pF
C2
1000 pF
17 pF
C3
3.0 pF
1.0 pF
C4
1–12 pF
0.8–8.0 pF
C5
1–12 pF
0.8–8.0 pF
C6
0.0015 µF
0.001 µF
C7
0.0015 µF
0.001 µF
L1
3.0 µH*
0.2 µH**
L2
0.15 µH*
0.03 µH**
L3
0.14 µH*
0.022 µH**
6 turns, (approx. — depends upon circuit layout) AWG #24
enameled copper wire, close wound on 7/32″ ceramic coil
form. Tuning provided by an aluminum slug.
1 turn, AWG #16 enameled copper wire, 3/8″ I.D.
(AIR CORE).
1/2 turn, AWG #16 enameled copper wire, 1/4″ I.D.
(AIR CORE).
Figure 3. 100 MHz and 400 MHz Neutralized Test Circuit
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2
VALUE
Reference
Designation
2N5555
NOISE FIGURE
(Tchannel = 25°C)
10
6.5
ID = 5.0 mA
NF, NOISE FIGURE (dB)
6.0
f = 400 MHz
4.0
2.0
0
VDS = 15 V
VGS = 0 V
5.5
0
2.0
4.5
f = 400 MHz
3.5
2.5
100 MHz
4.0 6.0 8.0
10
12
14
16
VDS, DRAIN-SOURCE VOLTAGE (VOLTS)
18
1.5
20
100 MHz
0
Figure 4. Effects of Drain–Source Voltage
2.0
4.0
6.0
8.0
10
ID, DRAIN CURRENT (mA)
+40
3RD ORDER INTERCEPT
+20
VDS = 15 Vdc
f1 = 399 MHz
f2 = 400 MHz
0
-20
-40
-60
-80
3RD ORDER IMD
OUTPUT @ IDSS,
0.25 IDSS
-100
-120
-140
-160
-120
FUNDAMENTAL
OUTPUT @ IDSS,
0.25 IDSS
-100
12
Figure 5. Effects of Drain Current
INTERMODULATION CHARACTERISTICS
Pout , OUTPUT POWER PER TONE (dB)
NF, NOISE FIGURE (dB)
8.0
-80
-60
-40
-20
Pin, INPUT POWER PER TONE (dB)
0
+20
Figure 6. Third Order Intermodulation Distortion
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3
14
2N5555
COMMON SOURCE CHARACTERISTICS
30
20
bis @ IDSS
10
7.0
5.0
3.0
gis @ IDSS
2.0
gis @ 0.25 IDSS
1.0
0.7
0.5
0.3
10
grs , REVERSE TRANSADMITTANCE (mmhos)
brs , REVERSE SUSCEPTANCE (mmhos)
gis, INPUT CONDUCTANCE (mmhos)
bis, INPUT SUSCEPTANCE (mmhos)
ADMITTANCE PARAMETERS
(VDS = 15 Vdc, Tchannel = 25°C)
bis @ 0.25 IDSS
20
30
50 70 100
200 300
f, FREQUENCY (MHz)
5.0
3.0
2.0
0.25 IDSS
0.3
0.2
0.1
0.07
0.05
500 700 1000
brs @ IDSS
1.0
0.7
0.5
grs @ IDSS, 0.25 IDSS
10
20
50 70 100
200 300
f, FREQUENCY (MHz)
500 700 1000
10
10
7.0
5.0
gfs @ IDSS
gfs @ 0.25 IDSS
3.0
2.0
1.0
0.7
0.5
0.3
0.2
10
30
Figure 8. Reverse Transfer Admittance (yrs)
gos, OUTPUT ADMITTANCE (mhos)
bos, OUTPUT SUSCEPTANCE (mhos)
gfs, FORWARD TRANSCONDUCTANCE (mmhos)
|b fs|, FORWARD SUSCEPTANCE (mmhos)
Figure 7. Input Admittance (yis)
20
|bfs| @ IDSS
30
50 70 100
200 300
f, FREQUENCY (MHz)
bos @ IDSS and 0.25 IDSS
2.0
1.0
0.5
0.2
gos @ IDSS
0.1
0.05
|bfs| @ 0.25 IDSS
20
5.0
gos @ 0.25 IDSS
0.02
500 700 1000
0.01
10
Figure 9. Forward Transadmittance (yfs)
20
30
50 70 100
200 300
f, FREQUENCY (MHz)
500 700 1000
Figure 10. Output Admittance (yos)
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4
2N5555
COMMON SOURCE CHARACTERISTICS
S–PARAMETERS
(VDS = 15 Vdc, Tchannel = 25°C, Data Points in MHz)
30°
20°
10°
0°
1.0
40°
350°
340°
400
0.8
ID = IDSS
0.6
90°
800
50°
350°
340°
330°
320°
700
800
700
300°
60°
290°
70°
280°
80°
900
0.3
ID = IDSS, 0.25 IDSS
310°
900
800
0.2
300°
700
600
600
500
600
80°
310°
0°
0.4
500
400
0.7
70°
40°
10°
300
300
60°
320°
20°
200
200
0.9
30°
ID = 0.25 IDSS
100
100
50°
330°
0.1
500
290°
400
300
280°
0.0
200
270°
90°
100°
260°
100°
260°
110°
250°
110°
250°
120°
240°
120°
240°
130°
230°
130°
230°
140°
220°
140°
220°
900
150°
160°
30°
20°
170°
180°
190°
200°
210°
150°
160°
340°
330°
30°
20°
Figure 11. S11s
10°
0°
350°
0.6
0.5
60°
900
70°
80°
90°
100°
110°
120°
800
700
600
500
0.4
900
800
700
600
500
0.3
100
400
400
0.3
ID = 0.25 IDSS
300
200
0.4
100
0.5
300
ID = IDSS
200
170°
180°
190°
200°
210°
Figure 12. S12s
40°
50°
270°
100
130°
10°
0°
350°
340°
330°
100 200
I
=
0.25
IDSS
D
300
1.0
400
100 200
500
300
600
400
700
0.9
500
800
600
ID = IDSS
700
900
800
900
0.8
320°
40°
310°
50°
300°
60°
290°
70°
280°
80°
270°
90°
270°
260°
100°
260°
250°
110°
250°
240°
120°
240°
230°
130°
230°
220°
140°
220°
0.7
320°
310°
300°
290°
280°
0.6
0.6
140°
150°
160°
170°
180°
190°
200°
210°
150°
Figure 13. S21s
160°
170°
180°
190°
Figure 14. S22s
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5
200°
210°
2N5555
COMMON GATE CHARACTERISTICS
ADMITTANCE PARAMETERS
(VDG = 15 Vdc, Tchannel = 25°C)
10
7.0
5.0
grg , REVERSE TRANSADMITTANCE (mmhos)
brg , REVERSE SUSCEPTANCE (mmhos)
gig, INPUT CONDUCTANCE (mmhos)
big, INPUT SUSCEPTANCE (mmhos)
20
gig @ IDSS
3.0
grg @ 0.25 IDSS
2.0
1.0
0.7
0.5
big @ IDSS
0.3
0.2
10
20
30
big @ 0.25 IDSS
50 70 100
200 300
f, FREQUENCY (MHz)
0.5
0.3
0.1
0.07
0.05
0.25 IDSS
0.03
0.02
0.01
0.007
0.005
500 700 1000
brg @ IDSS
0.2
gig @ IDSS, 0.25 IDSS
10
10
7.0
5.0
gfg @ IDSS
3.0
gfg @ 0.25 IDSS
2.0
1.0
0.7
0.5
bfg @ IDSS
0.3
brg @ 0.25 IDSS
0.2
0.1
10
20
30
50 70 100
200 300
f, FREQUENCY (MHz)
30
50 70 100
200 300
f, FREQUENCY (MHz)
500 700 1000
Figure 16. Reverse Transfer Admittance (yrg)
gog, OUTPUT ADMITTANCE (mmhos)
bog, OUTPUT SUSCEPTANCE (mmhos)
gfg , FORWARD TRANSCONDUCTANCE (mmhos)
bfg , FORWARD SUSCEPTANCE (mmhos)
Figure 15. Input Admittance (yig)
20
500 700 1000
1.0
0.7
0.5
bog @ IDSS, 0.25 IDSS
0.3
0.2
0.1
0.07
0.05
gog @ IDSS
0.03
0.02
0.01
gog @ 0.25 IDSS
10
Figure 17. Forward Transfer Admittance (yfg)
20
30
50 70 100
200 300
f, FREQUENCY (MHz)
500 700 1000
Figure 18. Output Admittance (yog)
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6
2N5555
COMMON GATE CHARACTERISTICS
S–PARAMETERS
(VDS = 15 Vdc, Tchannel = 25°C, Data Points in MHz)
30°
20°
10°
0°
350°
340°
0.7
40°
100
100
200
200
0.5
300
300
60°
ID = IDSS
0.4
70°
400
700
400
500
310°
50°
300°
60°
290°
70°
280°
80°
600
900
270°
90°
100°
260°
100°
110°
250°
110°
120°
240°
120°
130°
230°
130°
140°
220°
160°
170°
180°
190°
20°
10°
0°
350°
200°
50°
320°
300°
0.01
100
600
ID = IDSS
700
290°
280°
0.0
270°
500
600
700
800
800
260°
ID = 0.25 IDSS
250°
0.01
240°
0.02
230°
900
0.03
220°
0.04
150°
160°
170°
180°
190°
200°
210°
340°
330°
Figure 20. S12g
340°
330°
30°
20°
10°
40°
320°
0°
1.5
1.0
100
100
0.4
330°
0.02
140°
210°
0.5
40°
340°
310°
Figure 19. S11g
30°
350°
0.04
900
150°
0°
800
900
90°
40°
10°
600
800
0.3
320°
20°
0.03
500
700
80°
30°
ID = 0.25 IDSS
0.6
50°
330°
350°
300
200
400
320°
700
600
800
0.9
ID = IDSS
500
900
310°
50°
300°
60°
290°
70°
280°
80°
270°
90°
270°
260°
100°
260°
110°
250°
110°
250°
120°
240°
120°
240°
130°
230°
130°
230°
140°
220°
140°
220°
100
0.3
60°
0.2
70°
80°
ID = 0.25 IDSS
0.1
900
90°
900
100°
150°
160°
170°
180°
190°
200°
210°
ID = IDSS, 0.25 IDSS
0.8
Figure 21. S21g
300°
0.7
290°
280°
0.6
150°
160°
170°
180°
190°
Figure 22. S22g
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7
310°
200°
210°
2N5555
PACKAGE DIMENSIONS
TO–92 (TO–226AA)
CASE 29–11
ISSUE AL
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
B
R
P
L
SEATING
PLANE
K
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
D
X X
G
J
H
V
C
SECTION X–X
1
N
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
--0.250
--0.080
0.105
--0.100
0.115
--0.135
---
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
--6.35
--2.04
2.66
--2.54
2.93
--3.43
---
N
STYLE 5:
PIN 1. DRAIN
2. SOURCE
3. GATE
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
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including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
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2N5555/D