AM4830NS Analog Power N-Channel 30-V (D-S) MOSFET MOSFET PRODUCT SUMMARY VDS (V) rDS(on) m(Ω) ID (A) 13.5 @ VGS = 10V 13 30 20 @ VGS = 4.5V 11 These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. • • • • SCHOTTKY PRODUCT SUMMARY VSD (V) VDS (V) IF (A) Diode Forward Voltage 30 0.61 V @ 3.0A 3.0 Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe SOIC-8 saves board space Fast switching speed High performance trench technology SOIC-8 Top View D S 1 8 D S 2 7 D S 3 4 6 D 5 D G K Schottky Diode G N-Channel MOSFET A S o ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED) Symbol Limit Units Parameter 30 Drain-Source Voltage VDS V VGS ±20 Gate-Source Voltage o TA=25 C a Continuous Drain Current o TA=70 C b Pulsed Drain Current a Continuous Source Current (Diode Conduction) ±13 ID IDM ±50 IS 2.3 o TA=25 C a Power Dissipation o TA=70 C THERMAL RESISTANCE RATINGS Parameter a Maximum Junction-to-Case a Maximum Junction-to-Ambient t <= 5 sec t <= 5 sec RθJC RθJA W 2.2 TJ, Tstg Symbol A 3.1 PD Operating Junction and Storage Temperature Range A ±11 o C -55 to 150 Maximum 25 50 Units o o C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature 1 PRELIMINARY Publication Order Number: DS-AM4830NS_E AM4830NS Analog Power o SPECIFICATIONS (TA = 25 C UNLESS OTHERWISE NOTED) Parameter Symbol Test Conditions Limits Unit Min Typ Max Static Gate-Threshold Voltage V VGS(th) VDS = VGS, ID = 250 uA Gate-Body Leakage IGSS VDS = 0 V, VGS = 20 V Zero Gate Voltage Drain Current IDSS On-State Drain CurrentA ID(on) VDS = 5 V, VGS = 10 V rDS(on) VGS = 10 V, ID = 10 A VGS = 4.5 V, ID = 8 A Forward Tranconductance gf s VDS = 15 V, ID = 10 A 40 S Diode Forward Voltage VSD IS = 2.3 A, VGS = 0 V 0.7 V Drain-Source On-ResistanceA A 1 ±100 VDS = 24 V, VGS = 0 V 1 VDS = 24 V, VGS = 0 V, TJ = 55oC 25 20 nA uA A 13.5 mΩ 18 b Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time Turn-Off Delay Time Fall-Time tr td(of f) VDS = 15 V, VGS = 4.5 V, ID = 10 A 12.5 nC 2.6 4.6 20 VDD = 25 V, RL = 25 Ω , ID = 1 A, VGEN = 10 V 9 nS 70 20 tf Drain-Source Diode Characteristics and MaximumRatings Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage IS VSD 3.0 VGS = 0 V, IS = 3.0 AA 0.61 A V Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur. Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer. 2 PRELIMINARY Publication Order Number: DS-AM4830NS_E AM4830NS Analog Power ID, DRAIN CURRENT (A) 50 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE Typical Electrical Characteristics (N-Channel) VGS = 10V 6.0V 40 4.0V 30 20 3.0V 10 0 0 0.5 1 1.5 2 2 1.7 1.4 4.5V 6.0V 1.1 10V 0.8 0.5 0 VDS, DRAIN-SOURCE VOLTAGE (V) 10 20 30 40 50 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics Figure 2. On-Resistance with Drain Current 1.6 ID = 10A RDS(ON), ON-Resistance (OHM ) Normalized RDS(on) 0.05 VGS = 10V I D = 10A 1.4 1.2 1.0 0 .8 0 .6 -50 -2 5 0 25 50 75 10 0 12 5 150 0.04 0.03 0.02 o T A = 25 C 0.01 0 2 T J Juncat ion T emperature (C) 4 6 8 10 VGS, Gate To Source Voltage (V) Figure 3. On-Resistance Variation with Temperature Figure 4. On-Resistance Variation with Gate to Source Voltage 60 VD=5V 100 -55C IS, REVERSE DRAIN CURRENT (A) I D Drain Current (A) 50 25C 40 30 125C 20 10 0 0 1 2 3 4 5 6 VGS = 0V 10 o TA = 125 C 1 0.1 o 25 C 0.01 0.001 0.0001 VGS Ga te to S o urc e Vo lta ge (V) 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature 3 PRELIMINARY Publication Order Number: DS-AM4830NS_E AM4830NS Analog Power Typical Electrical Characteristics (N-Channel) 10 1600 CAPACITANCE (pF) Vgs Voltage ( V ) 8 6 4 2 f = 1MHz VGS = 0 V Ciss 1200 800 Coss 400 Crss 0 0 0 4 8 12 16 20 24 28 0 5 10 15 20 25 30 Qg, Gate Charge (nC) VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 8. Capacitance Characteristics 50 2.4 SINGLE PULSE RqJA = 125C/W TA = 25C VDS = VGS 2.2 P(pk), Peak Transient Power (W) Vth, Gate-Source Thresthold Voltage (V) Figure 7. Gate Charge Characteristics ID = 250mA 2 1.8 1.6 1.4 1.2 1 -50 -25 0 25 50 75 100 125 150 175 o TA, AMBIENT TEMPERATURE ( C) 40 30 20 10 0 0.001 0.01 0.1 1 10 100 t1, TIME (sec) Figure 9. Threshold Vs Ambient Temperature Figure 10. Single Pulse Maximum Power Dissipation Normalized Thermal Transient Junction to Ambient 1 D = 0.5 RqJA(t) = r(t) * RqJA RqJA = 125 C/W 0.2 0.1 0.1 0.05 P(pk) 0.02 t1 0.01 t2 0.01 TJ - TA = P * RqJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Square Wave Pulse Duration (S) Figure 11. Transient Thermal Response Curve 4 PRELIMINARY Publication Order Number: DS-AM4830NS_E AM4830NS Analog Power Package Information SO-8: 8LEAD H x 45° 5 PRELIMINARY Publication Order Number: DS-AM4830NS_E