AO4882

AO4882
40V Dual N-Channel MOSFET
General Description
Product Summary
The AO4882 uses advanced trench technology to provide
excellent RDS(ON) with low gate charge. This is an all
purpose device that is suitable for use in a wide range of
power conversion applications.
ID (at VGS=10V)
VDS
40V
8A
RDS(ON) (at VGS=10V)
< 19mΩ
RDS(ON) (at VGS=4.5V)
< 27mΩ
100% UIS Tested
100% Rg Tested
SOIC-8
Top View
D1
D2
Bottom View
Top View
S2
G2
S1
G1
1
2
3
4
D2
D2
D1
D1
8
7
6
5
G1
G2
S1
S2
Pin1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TA=25°C
Continuous Drain
Current
C
Units
V
±20
V
8
ID
TA=70°C
Maximum
40
6
A
IDM
40
Avalanche Current C
IAS
15
A
Avalanche energy L=0.1mH C
TA=25°C
Power Dissipation B
TA=70°C
EAS
11
mJ
Junction and Storage Temperature Range
TJ, TSTG
Pulsed Drain Current
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
Rev 0 : Dec 2011
2
PD
Symbol
t ≤ 10s
Steady-State
Steady-State
W
1.3
RθJA
RθJL
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-55 to 150
Typ
48
74
32
°C
Max
62.5
90
40
Units
°C/W
°C/W
°C/W
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AO4882
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
TJ=55°C
Gate-Body leakage current
VDS=0V, VGS=±20V
VDS=VGS ID=250µA
1.4
ID(ON)
On state drain current
VGS=10V, VDS=5V
40
±100
nA
1.9
2.4
V
15.4
19
22.5
29
VGS=4.5V, ID=4A
21
27
mΩ
1
V
2.5
A
VGS=10V, ID=8A
Static Drain-Source On-Resistance
TJ=125°C
A
gFS
Forward Transconductance
VDS=5V, ID=8A
33
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.75
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
µA
5
Gate Threshold Voltage
Units
V
1
VGS(th)
Coss
Max
40
VDS=40V, VGS=0V
IGSS
RDS(ON)
Typ
VGS=0V, VDS=20V, f=1MHz
S
415
pF
112
pF
11
VGS=0V, VDS=0V, f=1MHz
pF
Ω
2.2
3.5
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
6.5
12
nC
Qg(4.5V) Total Gate Charge
3
6
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
VGS=10V, VDS=20V, ID=8A
VGS=10V, VDS=20V, RL=2.5Ω,
RGEN=3Ω
1
mΩ
1.2
nC
1.1
nC
4
ns
3
ns
15
ns
tf
Turn-Off Fall Time
2
ns
trr
Body Diode Reverse Recovery Time
IF=8A, dI/dt=100A/µs
12.5
Qrr
Body Diode Reverse Recovery Charge IF=8A, dI/dt=100A/µs
3.5
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0 : Dec 2011
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Page 2 of 5
AO4882
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
20
10V
VDS=5V
4.5V
25
15
3.5V
ID(A)
ID (A)
20
15
10
3V
125°C
10
5
25°C
5
VGS=2.5V
0
0
0
1
2
3
4
0
5
50
2
3
4
5
6
Normalized On-Resistance
1.8
40
RDS(ON) (mΩ
Ω)
1
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
30
VGS=4.5V
20
10
VGS=10V
0
1.6
VGS=10V
ID=8A
1.4
17
5
2
VGS=4.5V10
1.2
ID=4A
1
0.8
0
3
6
9
12
15
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
60
1.0E+02
ID=8A
1.0E+01
50
40
1.0E+00
125°C
IS (A)
RDS(ON) (mΩ
Ω)
40
30
20
125°C
1.0E-01
1.0E-02
1.0E-03
10
25°C
1.0E-04
25°C
1.0E-05
0
2
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0 : Dec 2011
4
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AO4882
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
600
VDS=20V
ID=8A
500
Capacitance (pF)
VGS (Volts)
8
6
4
2
400
300
200
Coss
100
0
Crss
0
0
2
4
6
Qg (nC)
Figure 7: Gate-Charge Characteristics
8
0
10
20
30
VDS (Volts)
Figure 8: Capacitance Characteristics
40
10000
100.0
1.0
10µs
1000
100µ
Power (W)
TA=25°C
RDS(ON)
limited
10.0
ID (Amps)
Ciss
1ms
10ms
TJ(Max)=150°C
TA=25°C
0.1
10s
100
10
DC
0.0
0.01
0.1
1
VDS (Volts)
10
100
1
0.00001
0.001
0.1
10
1000
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-toAmbient (Note F)
Figure 10: Maximum Forward Biased
Safe Operating Area (Note F)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=90°C/W
0.1
0.01
PD
Single Pulse
Ton
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
T
100
1000
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0 : Dec 2011
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Page 4 of 5
AO4882
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev 0 : Dec 2011
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 5 of 5