AOSMD AON3406

AON3406
30V N-Channel MOSFET
General Description
Features
The AON3406 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM
applications. The source leads are separated to allow
a Kelvin connection to the source, which may be
used to bypass the source inductance.
VDS (V) = 30V
ID = 10A (VGS = 10V)
RDS(ON) < 15mΩ (VGS = 10V)
RDS(ON) < 24mΩ (VGS = 4.5V)
DFN 3x3
Top View
D
Bottom View
Top View
1
8
2
7
3
6
4
5
G
S
Pin 1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TA=25°C
Continuous Drain
Current A
Pulsed Drain Current
TA=70°C
B
Junction and Storage Temperature Range
Maximum Junction-to-Lead C
±20
V
ID
7.8
IDM
30
-55 to 150
Symbol
Alpha & Omega Semiconductor, Ltd.
W
1.9
TJ, TSTG
t ≤ 10s
Steady-State
Steady-State
A
3.0
PD
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Units
V
10
TA=25°C
Power Dissipation A
Maximum
30
RθJA
RθJL
Typ
32
65
25
°C
Max
42
100
35
Units
°C/W
°C/W
°C/W
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AON3406
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Min
ID=250µA, VGS=0V
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1.4
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
30
Static Drain-Source On-Resistance
TJ=125°C
VGS=4.5V, ID=9A
gFS
Forward Transconductance
VDS=5V, ID=10A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
0.003
1
Units
V
TJ=55°C
VGS=10V, ID=10A
Coss
Max
30
VDS=24V, VGS=0V
IDSS
RDS(ON)
Typ
5
±100
nA
1.75
3
V
12
15
18
22
18
24
mΩ
1
V
4
A
A
mΩ
30
0.73
955
VGS=0V, VDS=15V, f=1MHz
µA
S
1200
pF
145
pF
112
pF
0.5
0.85
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
17
24
nC
Qg(4.5V) Total Gate Charge
9
12
nC
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=10A
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
IF=10A, dI/dt=100A/µs
Qrr
Body Diode Reverse Recovery Charge IF=10A, dI/dt=100A/µs
VGS=10V, VDS=15V, RL=1.5Ω,
RGEN=3Ω
Body Diode Reverse Recovery Time
3.4
nC
4.7
nC
5
6.5
ns
6
7.5
ns
19
25
ns
4.5
6
ns
19
21
9
12
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
curve provides a single pulse rating.
Rev2 : Nov 2009
2
FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
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AON3406
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
4.5V
32
5V
25
4V
ID(A)
ID (A)
24
10V
20
VDS=5V
28
15
10
20
125°C
16
12
3.5V
25°C
8
5
4
VGS=3V
0
0
0
1
2
3
4
1.5
5
2
22
Normalized On-Resistance
RDS(ON) (mΩ )
800
140
80
0.5
1.8
VGS=4.5V
18
16
14
3
3.5
4
4.5
VGS(Volts)
Figure 2: Transfer Characteristics
VDS (Volts)
Fig 1: On-Region Characteristics
20
2.5
VGS=10V
12
10
1.6
15
7
1.4
220
140
VGS=10V
ID=10A
VGS=4.5V
ID=9A
1.2
1
0.8
0
5
10
15
20
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
50
1.0E+01
ID=10A
1.0E+00
40
IS (A)
RDS(ON) (mΩ )
1.0E-01
30
125°C
1.0E-02
125°C
25°C AS CRITICAL
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES
1.0E-03
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED.
AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF20
SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
25°C
1.0E-04
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
1.0E-05
10
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
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AON3406
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1500
10
VDS=15V
ID=10A
1250
Ciss
Capacitance (pF)
VGS (Volts)
8
6
4
2
1000
750
500
Coss
250
0
0
4
8
12
16
Crss
0
20
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
5
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
800
140
80
0.5
100.0
100
10µs
100µs
1ms
1.0
DC
10ms
100ms
TJ(Max)=150°C
TA=25°C
0.1
0.0
0.01
0.1
10s
1
VDS (Volts)
10
Zθ JA Normalized Transient
Thermal Resistance
TJ(Max)=150°C
TA=25°C
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=42°C/W
15
7
60
40
20
0
0.0001 0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
100
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
30
220
140
80
RDS(ON)
limited
Power (W)
ID (Amps)
10.0
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS
0.1 IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES
PD NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
Single Pulse
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
0.01
0.00001
0.0001
0.001
0.01
Ton
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
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