AO4459 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4459 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard product AO4459 is Pb-free (meets ROHS & Sony 259 specifications). AO4459L is a Green Product ordering option. AO4459 and AO4459L are electrically identical . VDS (V) = -30V (V GS = -10V) ID = -6.5A RDS(ON) < 46mΩ (VGS = -10V) RDS(ON) < 72mΩ (VGS = -4.5V) D SOIC-8 Top View S S S G D D D D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A TA=25°C TA=70°C Pulsed Drain Current B TA=25°C Power Dissipation A TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C A Alpha & Omega Semiconductor, Ltd. Units V ±20 V -6.5 -30 3.1 PD W 2 TJ, TSTG t ≤ 10s Steady-State Steady-State A -5.3 ID IDM -55 to 150 Symbol A Maximum -30 RθJA RθJL Typ 33 62 18 °C Max 40 75 24 Units °C/W °C/W °C/W AO4459 Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250µA, VGS=0V -30 -1 -5 Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS ID=-250µA -1.5 ID(ON) On state drain current VGS=-10V, VDS=-5V -30 ±100 nA -2.5 V 38 46 53 68 VGS=-4.5V, I D=-5A 58 72 VDS=-5V, ID=-6.5A 11 TJ=125°C Static Drain-Source On-Resistance gFS Forward Transconductance VSD IS=-1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg (10V) Total Gate Charge (10V) Qg (4.5V) Total Gate Charge (4.5V) µA -1.85 VGS=-10V, I D=-6.5A Coss Units V TJ=55°C IGSS IS Max VDS=-24V, VGS=0V VGS(th) RDS(ON) Typ A VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=-10V, VDS=-15V, I D=-6.5A mΩ S -0.78 668 mΩ -1 V -3.5 A 830 pF 126 pF 92 pF 6 9 Ω 12.7 16 nC 6.4 nC 2 nC Qgs Gate Source Charge Qgd Gate Drain Charge 4 nC tD(on) Turn-On DelayTime 7.7 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Qrr VGS=-10V, VDS=-15V, RL=2.5Ω, RGEN=3Ω 6.8 ns 20 ns 10 Body Diode Reverse Recovery Time IF=-6.5A, dI/dt=100A/µs 22 Body Diode Reverse Recovery Charge IF=-6.5A, dI/dt=100A/µs 15 ns 30 ns nC A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using < 300µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev0 Sept 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4459 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 40 -10V 35 -8V VDS=-5V -5V 8 25 -4.5V 20 -4V 125°C 6 -ID(A) -ID (A) 30 25°C 4 15 VGS=-3.5V 10 2 -40°C 5 0 0 0 1 2 3 4 5 0 1 -VDS (Volts) Figure 1: On-Region Characteristics 3 4 5 -VGS(Volts) Figure 2: Transfer Characteristics 100 VGS=-4.5V 60 VGS=-10V 40 Normalized On-Resistance 1.6 80 RDS(ON) (mΩ) 2 VGS=-10V ID=-6.5A 1.4 VGS=-4.5V ID=-5A 1.2 1.0 0.8 20 0 2 4 IF6=-6.5A, dI/dt=100A/µs 8 10 0.6 -50 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage ID=-6.5A 150 200 1E+00 1E-01 -IS (A) RDS(ON) (mΩ) 100 1E+01 120 100 50 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 160 140 0 125°C 1E-02 125°C 80 1E-03 25°C FOR THE CONSUMER THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED MARKET. APPLICATIONS OR USES AS CRITICAL 60 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING 1E-04 25°C -40°CDESIGN, -40°C OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT 40 1E-05 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 20 1E-06 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VGS (Volts) -V (Volts) SD Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics Alpha & Omega Semiconductor, Ltd. AO4459 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1200 10 Ciss Capacitance (pF) -VGS (Volts) 1000 VDS=-15V ID=-6.5A 8 6 4 2 800 600 400 Coss 200 Crss 0 0 0 3 6 9 12 15 0 5 -Qg (nC) Figure 7: Gate-Charge Characteristics 10 15 20 25 30 -VDS (Volts) Figure 8: Capacitance Characteristics 100 40 100µs RDS(ON) limited 10 1ms 10ms 1 TJ(Max)=150°C TA=25°C DC 1s 10s 0 0.001 dI/dt=100A/µs IF=-6.5A, 10 100 1 ZθJA Normalized Transient Thermal Resistance 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=75°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 20 10 100ms 0.1 0.1 30 Power (W) -ID (Amps) TJ(Max)=150°C TA=25°C In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL PD COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH 0.01APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, Ton FUNCTIONS AND RELIABILITY WITHOUT NOTICE. T Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance(Note E) Alpha & Omega Semiconductor, Ltd. 100 1000