AO4414A N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4414A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance. Standard Product AO4414A is Pb-free (meets ROHS & Sony 259 specifications). AO4414AL is a Green Product ordering option. AO4414A and AO4414AL are electrically identical. VDS (V) = 30V ID = 8.5A (VGS = 10V) RDS(ON) < 26mΩ (VGS = 10V) RDS(ON) < 40mΩ (VGS = 4.5V) D S S S G D D D D G S SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain Current A Pulsed Drain Current ID IDM TA=70°C B Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. ±20 V 50 3 W 2.1 TJ, TSTG °C -55 to 150 Symbol t ≤ 10s Steady-State Steady-State A 7.1 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Units V 8.5 TA=25°C Power Dissipation Maximum 30 RθJA RθJL Typ 34 62 18 Max 40 75 24 Units °C/W °C/W °C/W AO4414A Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS ID=250µA 1 On state drain current VGS=4.5V, VDS=5V 20 RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=8.5A TJ=125°C VGS=4.5V, ID=5A gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current VDS=5V, ID=8.5A DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge 1 Units V 5 VGS(th) Coss 0.004 TJ=55°C ID(ON) IS Max 30 VDS=24V, VGS=0V IDSS Typ 10 1.8 VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=8.5A 100 nA 3 V A 17 26 24 30 27 40 mΩ mΩ 24 0.77 621 VGS=0V, VDS=15V, f=1MHz µA S 1 V 4.3 A 820 pF 118 pF 85 pF 0.8 1.5 Ω 11.3 17 nC 5.7 8 nC 2.1 Qgd Gate Drain Charge 3 tD(on) Turn-On DelayTime 4.5 tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time nC nC 6.5 ns VGS=10V, VDS=15V, RL=1.8Ω, RGEN=3Ω 3.1 5 ns 15.1 23 ns 2.7 5 ns trr Body Diode Reverse Recovery Time IF=8.5A, dI/dt=100A/µs 15.5 21 Qrr Body Diode Reverse Recovery Charge IF=8.5A, dI/dt=100A/µs 7.1 10 ns nC A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev 0: December 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4414A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 20 5V 10V 25 6V 12 4V ID(A) ID (A) 20 VDS=5V 16 4.5V 15 8 10 125°C 3.5V 4 5 25°C VGS=3V 0 0 0 1 2 3 4 5 1.5 2 VDS (Volts) Fig 1: On-Region Characteristics 3 3.5 4 4.5 VGS(Volts) Figure 2: Transfer Characteristics 35 1.6 VGS=10V Normalized On-Resistance VGS=4.5V 30 RDS(ON) (mΩ) 2.5 25 20 VGS=10V 1.4 VGS=4.5V 1.2 1 0.8 15 0 5 10 15 0.6 20 -50 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 60 ID=8.5A 1.0E+00 50 1.0E-01 40 IS (A) RDS(ON) (mΩ) -25 125°C 125°C 1.0E-02 25°C THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL 30 1.0E-03 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, 20 1.0E-04 FUNCTIONS AND RELIABILITY25°C WITHOUT NOTICE. 1.0E-05 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AO4414A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1000 10 VDS=15V ID=8.5A 800 Capacitance (pF) VGS (Volts) 8 6 4 Ciss 600 400 2 200 0 0 0 2 4 6 8 10 12 Coss Crss 0 5 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 100µs 10ms 0.1s 1.0 1s TJ(Max)=150°C TA=25°C DC 1 10 100 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) D=T on/T TJ,PK=T A+PDM.ZθJA.RθJA RθJA=40°C/W 20 0 0.001 VDS (Volts) 10 30 10 10s 0.1 0.1 TJ(Max)=150°C TA=25°C 40 10µs 1ms 10.0 Power (W) ID (Amps) 30 50 RDS(ON) limited ZθJA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL PD COMPONENTS NOT ASSUME ANY LIABILITY ARISING 0.1 IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, Ton FUNCTIONS AND RELIABILITY WITHOUT NOTICE. T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000