AOSMD AON7246

AON7246
60V N-Channel MOSFET
General Description
Product Summary
The AON7246 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON).This device is ideal for boost
converters and synchronous rectifiers for consumer,
telecom, industrial power supplies and LED backlighting.
VDS
ID (at VGS=10V)
60V
34.5A
RDS(ON) (at VGS=10V)
< 15mΩ
RDS(ON) (at VGS =4.5V)
< 19mΩ
100% UIS Tested
100% Rg Tested
Top View
DFN 3x3 EP
Bottom View
D
Top View
1
8
2
7
3
6
4
5
G
S
Pin 1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current
Pulsed Drain Current
C
Avalanche Current
C
Avalanche energy L=0.1mH C
TC=25°C
Power Dissipation B
TA=25°C
Power Dissipation
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
A
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
Rev 0: Sep. 2011
IAS, IAR
20
A
EAS, EAR
20
mJ
34.7
Steady-State
Steady-State
W
13.9
3.1
RθJA
RθJC
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W
2
TJ, TSTG
Symbol
t ≤ 10s
A
8
PDSM
TA=70°C
A
10
PD
TC=100°C
V
22
IDSM
TA=70°C
±20
95
IDM
TA=25°C
Continuous Drain
Current
Units
V
34.5
ID
TC=100°C
Maximum
60
-55 to 150
Typ
30
60
3
°C
Max
40
75
3.6
Units
°C/W
°C/W
°C/W
Page 1 of 6
AON7246
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
V
IGSS
VGS(th)
Gate-Body leakage current
VDS=0V, VGS=±20V
Gate Threshold Voltage
On state drain current
VDS=VGS, ID=250µA
1.5
VGS=10V, VDS=5V
95
TJ=55°C
TJ=125°C
VGS=4.5V, ID=9A
gFS
Forward Transconductance
VDS=5V, ID=10A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
µA
5
VGS=10V, ID=10A
Static Drain-Source On-Resistance
Units
1
Zero Gate Voltage Drain Current
RDS(ON)
Max
60
VDS=60V, VGS=0V
IDSS
ID(ON)
Typ
100
nA
2
2.5
V
12
15
20.5
26
15
19
mΩ
1
V
35
A
A
mΩ
75
0.72
S
1070
1340
1610
pF
VGS=0V, VDS=30V, f=1MHz
85
123
160
pF
6
10
14
pF
VGS=0V, VDS=0V, f=1MHz
0.7
1.5
2.3
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
16
21
25
nC
Qg(4.5V) Total Gate Charge
7
9
11
nC
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=10V, VDS=30V, ID=10A
Qgs
Gate Source Charge
4.7
nC
Qgd
Gate Drain Charge
2.6
nC
tD(on)
Turn-On DelayTime
6
ns
tr
Turn-On Rise Time
2.5
ns
22
ns
VGS=10V, VDS=30V, RL=3.0Ω,
RGEN=3Ω
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
IF=10A, dI/dt=500A/µs
10.5
15.5
20.5
Qrr
Body Diode Reverse Recovery Charge IF=10A, dI/dt=500A/µs
38.5
55.5
72.5
Body Diode Reverse Recovery Time
2.5
ns
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: Sep. 2011
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Page 2 of 6
AON7246
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
80
10V
VDS=5V
4.5V
6V
60
4V
ID(A)
ID (A)
60
40
40
125°C
3.5V
20
20
VGS=3V
0
0
1
2
3
4
25°C
0
1
5
20
3
4
5
6
Normalized On-Resistance
2
18
VGS=4.5V
RDS(ON) (mΩ
Ω)
2
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
16
14
12
10
VGS=10V
1.8
VGS=10V
ID=10A
1.6
17
5
2
=4.5V10
1.4
1.2
VGS
ID=9A
1
0.8
8
0
0
5
10
15
20
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction18
Temperature
(Note E)
35
1.0E+02
ID=10A
1.0E+01
40
1.0E+00
125°C
25
IS (A)
RDS(ON) (mΩ
Ω)
30
20
15
125°C
1.0E-01
1.0E-02
25°C
1.0E-03
10
1.0E-04
25°C
1.0E-05
5
2
Rev 0: Sep. 2011
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AON7246
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1800
VDS=30V
ID=10A
1600
Ciss
1400
Capacitance (pF)
VGS (Volts)
8
6
4
1200
1000
800
600
Coss
400
2
200
0
0
5
10
15
20
Qg (nC)
Figure 7: Gate-Charge Characteristics
25
0
10
20
30
40
50
VDS (Volts)
Figure 8: Capacitance Characteristics
60
200
1000.0
RDS(ON)
limited
10.0
100µs
1ms
1.0
10ms
17
5
2
10
120
80
DC
TJ(Max)=150°C
TC=25°C
0.1
TJ(Max)=150°C
TC=25°C
160
10µs
Power (W)
10µs
100.0
ID (Amps)
Crss
0
40
0.0
0
0.01
0.1
1
VDS (Volts)
10
100
0.0001
0.001
0.01
0.1
1
0
10
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-to-Case
(Note F)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=3.6°C/W
1
PD
0.1
Single Pulse
Ton
T
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: Sep. 2011
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Page 4 of 6
AON7246
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
35
TA=25°C
100
Power Dissipation (W)
IAR (A) Peak Avalanche Current
1000
TA=100°C
TA=150°C
10
TA=125°C
30
25
20
15
10
5
1
0
1
10
100
Time in avalanche, tA (µ
µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
1000
0
25
50
75
100
125
TCASE (°C)
Figure 13: Power De-rating (Note F)
10000
40
35
TA=25°C
1000
30
25
Power (W)
Current rating ID(A)
150
20
15
17
5
2
10
100
10
10
5
1
0
0
25
50
75
100
125
TCASE (°C)
Figure 14: Current De-rating (Note F)
0.1
10 0
1000
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
1E-05
150
0.001
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=75°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0: Sep. 2011
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Page 5 of 6
AON7246
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
90%
+ Vdd
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev 0: Sep. 2011
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6