AOSMD AON6400

AON6400
30V N-Channel MOSFET
General Description
Product Summary
The AON6400 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for load switch
and battery protection applications.
ID (at VGS=10V)
VDS
30V
85A
RDS(ON) (at VGS=10V)
< 1.4mΩ
RDS(ON) (at VGS = 4.5V)
< 1.8mΩ
100% UIS Tested
100% Rg Tested
D
DFN5X6
Top View
Top View
Bottom View
1
8
2
7
3
6
4
5
G
PIN1
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
Current G
VGS
TC=25°C
Pulsed Drain Current C
Continuous Drain
Current
V
A
400
31
IDSM
TA=70°C
±20
67
IDM
TA=25°C
Units
V
85
ID
TC=100°C
Maximum
30
A
25
Avalanche Current C
IAS, IAR
90
A
Avalanche energy L=0.1mH C
TC=25°C
EAS, EAR
405
mJ
Power Dissipation B
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Rev 1 : November 2010
2.3
Steady-State
Steady-State
RθJA
RθJC
W
1.45
TJ, TSTG
Symbol
t ≤ 10s
W
33
PDSM
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
83
PD
TC=100°C
-55 to 150
Typ
14
40
1
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°C
Max
17
55
1.5
Units
°C/W
°C/W
°C/W
Page 1 of 6
AON6400
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Min
Conditions
ID=250µA, VGS=0V
Typ
Max
30
V
VDS=30V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1.2
ID(ON)
On state drain current
VGS=10V, VDS=5V
400
TJ=55°C
µA
5
VDS=0V, VGS= ±20V
µA
1
VGS=10V, ID=20A
Units
1.7
2.2
V
A
1.15
1.4
1.75
2.1
VGS=4.5V, ID=20A
1.45
1.8
mΩ
VDS=5V, ID=20A
140
1
V
85
A
8300
pF
RDS(ON)
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.65
IS
Maximum Body-Diode Continuous Current
TJ=125°C
DYNAMIC PARAMETERS
Ciss
Input Capacitance
mΩ
S
5500
6900
740
1060
1380
pF
440
730
1020
pF
0.6
1.2
1.8
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
110
140
170
nC
Qg(4.5V) Total Gate Charge
55
70
84
nC
16
20
24
nC
32
45
nC
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=20A
20
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
12
ns
13
ns
88
ns
32
ns
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=500A/µs
15
19
23
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
44
55
66
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design,and the maximum temperature of 150°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. The maximum current rating is limited by package.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 1 : November 2010
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Page 2 of 6
AON6400
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
100
10V
VDS=5V
100
80
4.5V
3V
60
ID(A)
ID (A)
80
60
40
40
125°C
VGS=2.5V
20
20
25°C
0
0
0
1
2
3
4
1
5
1.5
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
3
2.5
3
2
2
Normalized On-Resistance
RDS(ON) (mΩ )
2
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VGS=4.5V
1
VGS=10V
0
1.8
VGS=10V
ID=20A
1.6
17
5
2
10
=4.5V
1.4
1.2
VGS
ID=15A
1
0.8
0
5
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0
25
50
75
100
125
150
175
200
0
Temperature (°C)
18
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
5
1.0E+02
ID=20A
1.0E+01
4
40
125°C
3
IS (A)
RDS(ON) (mΩ )
1.0E+00
125°C
1.0E-01
1.0E-02
2
25°C
1.0E-03
1
25°C
1.0E-04
1.0E-05
0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 1 : November 2010
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AON6400
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10000
10
VDS=15V
ID=20A
8000
Ciss
Capacitance (pF)
VGS (Volts)
8
6
4
6000
4000
Coss
2
2000
0
0
0
30
60
90
120
Qg (nC)
Figure 7: Gate-Charge Characteristics
Crss
0
150
1000.0
5
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
400
100.0
10µs
350
10µs
RDS(ON)
limited
1.0
1ms
10ms
DC
TJ(Max)=150°C
TC=25°C
0.1
Power (W)
ID (Amps)
300
100µs
10.0
250
17
5
TJ(Max)=150°C
2
TC=25°C
10
200
150
100
50
0.0
0
0.01
0.1
1
VDS (Volts)
10
100
0.0001
Zθ JC Normalized Transient
Thermal Resistance
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
0.01
0.1
1
0
10
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
0.001
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=1.5°C/W
1
0.1
PD
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
T
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 1 : November 2010
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Page 4 of 6
AON6400
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
90
Power Dissipation (W)
IAR (A) Peak Avalanche Current
1000
TA=25°C
TA=100°C
100
TA=150°C
TA=125°C
80
70
60
50
40
30
20
10
10
0
1
10
100
1000
µs)
Time in avalanche, tA (µ
Figure 12: Single Pulse Avalanche capability (Note
C)
0
25
50
75
100
150
10000
100
90
TA=25°C
80
1000
70
Power (W)
Current rating ID(A)
125
TCASE (°C)
Figure 13: Power De-rating (Note F)
60
50
40
30
17
5
2
10
100
10
20
10
0
0
25
50
75
100
125
150
1
0.0001
TCASE (°C)
Figure 14: Current De-rating (Note F)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
0.01
100
0
18
1
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=55°C/W
0.1
PD
0.01
Ton
Single Pulse
T
0.001
0.001
0.01
0.1
1
10
100
1000
10000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 1 : November 2010
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Page 5 of 6
AON6400
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev 1 : November 2010
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6