AP4224LGM-HF
Preliminary
Advanced Power
Electronics Corp.
DUAL N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Low On-Resistance
D2
D2
▼ Capable of 2.5V Gate Drive
D1
D1
▼ Dual N MOSFET Package
G2
S2
▼ RoHS Compliant & Halogen-Free
SO-8
S1
BVDSS
20V
RDS(ON)
14mΩ
ID
10A
G1
Description
Advanced Power MOSFETs from APEC provide the designer
with the best combination of fast switching, ruggedized device
design, ultra low on-resistance and cost-effectiveness.
D2
D1
The SO-8 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
G2
G1
S2
S1
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
20
V
+12
V
3
10
A
3
8
A
Continuous Drain Current
Continuous Drain Current
1
IDM
Pulsed Drain Current
30
A
PD@TA=25℃
Total Power Dissipation
2
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Unit
62.5
℃/W
1
20110810pre
AP4224LGM-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
20
-
-
V
RDS(ON)
Static Drain-Source On-Resistance2
VGS=4.5V, ID=10A
-
-
14
mΩ
VGS=2.5V, ID=7A
-
-
23
mΩ
0.3
-
1.2
V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
gfs
Forward Transconductance
VDS=10V, ID=10A
-
16
-
S
IDSS
Drain-Source Leakage Current
VDS=16V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS=+12V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=11A
-
10
-
nC
Qgs
Gate-Source Charge
VDS=15V
-
3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
4.5
-
nC
td(on)
Turn-on Delay Time
VDS=15V
-
9
-
ns
tr
Rise Time
ID=1A
-
5
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
21
-
ns
tf
Fall Time
VGS=10V
-
4.5
-
ns
Ciss
Input Capacitance
VGS=0V
-
1100
-
pF
Coss
Output Capacitance
VDS=15V
-
140
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
100
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.3
-
Ω
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=1.7A, VGS=0V
-
-
1.2
V
trr
Reverse Recovery Time
IS=11A, VGS=0V,
-
17
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
8
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board ; 135 ℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2