AP09N20BGP-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
▼ Lower Gate Charge
▼ Fast Switching Characteristics
BVDSS
RDS(ON)
ID
D
▼ RoHS Compliant & Halogen-Free
200V
460mΩ
7.8A
G
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
D
TO-220(P)
S
The TO-220 package is widely preferred for commercial-industrial
through-hole applications.
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
200
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25℃
Continuous Drain Current, V GS @ 10V
7.8
A
ID@TC=100℃
Continuous Drain Current, V GS @ 10V
5
A
20
A
69
W
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Unit
Rthj-c
Maximum Thermal Resistance, Junction-case
1.8
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
62
℃/W
Data & specifications subject to change without notice
1
201005131
AP09N20BGP-HF
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
VGS=0V, ID=250uA
VGS=10V, ID=5A
Min.
Typ.
Max. Units
200
-
-
460
V
mΩ
BVDSS
Drain-Source Breakdown Voltage
RDS(ON)
Static Drain-Source On-Resistance 2
VGS=4.5V, ID=3A
-
-
500
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
VDS=10V, ID=5A
-
9
-
S
gfs
Forward Transconductance
IDSS
Drain-Source Leakage Current
VDS=160V, VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS= +20V, VDS=0V
-
-
+100
nA
ID=5A
-
21
33.6
nC
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=160V
-
2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
14
-
nC
2
td(on)
Turn-on Delay Time
VDD=100V
-
6
-
ns
tr
Rise Time
ID=5A
-
9
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
39
-
ns
tf
Fall Time
VGS=10V
-
10
-
ns
Ciss
Input Capacitance
VGS=0V
-
630
1000
pF
Coss
Output Capacitance
VDS=25V
-
90
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
45
-
pF
Min.
Typ.
IS=5A, VGS=0V
-
-
1.3
V
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=5A, VGS=0V,
-
190
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
1.7
-
uC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP09N20BGP-HF
20
16
ID , Drain Current (A)
16
12
8
10V
7.0V
6.0V
5.0V
V GS =4.5V
o
T C =150 C
ID , Drain Current (A)
10V
7.0V
6.0V
5.0V
V G =4.5V
T C = 25 o C
12
8
4
4
0
0
0
8
16
24
0
32
8
16
24
32
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.8
1.6
I D =5A
V GS =10V
2.4
Normalized RDS(ON)
Normalized BVDSS (V)
1.4
1.2
1
2
1.6
1.2
0.8
0.8
0.4
0.6
0
-50
0
50
100
150
-50
o
0
50
100
150
o
T j , Junction Temperature ( C)
T j , Junction Temperature ( C )
Fig 3. Normalized BVDSS v.s. Junction
Fig 4. Normalized On-Resistance
Temperature
v.s. Junction Temperature
1.4
8
Normalized VGS(th) (V)
1.2
IS(A)
6
4
T j =150 o C
T j =25 o C
1
0.8
2
0.6
0.4
0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP09N20BGP-HF
10
f=1.0MHz
1000
8
800
6
600
C (pF)
VGS , Gate to Source Voltage (V)
I D =5A
V DS =160V
4
400
2
200
C iss
C oss
C rss
0
0
0
10
20
30
40
50
1
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
10
Normalized Thermal Response (Rthjc)
100
100us
ID (A)
Operation in this area
limited by RDS(ON)
1ms
1
10ms
100ms
1s
DC
T c =25 o C
Single Pulse
0
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.1
1
10
100
1000
0.00001
0.0001
0.001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.01
0.1
1
10
t , Pulse Width (s)
Fig10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4