ASB ASX521

ASX521
250-3000 MHz MMIC Amplifier
Features
Description
·19 dB Gain at 2000 MHz
The ASX521, a power amplifier MMIC, has a high
linearity, high gain, and high efficiency over a wide
range of frequency, being suitable for use in both
receiver and transmitter of telecommunication
systems up to 3 GHz. The amplifier is available in
an SOIC-8 package and passes through the stringent DC, RF, and reliability tests.
·31.5 dBm P1dB at 2000 MHz
·48 dBm OIP3 at 2000 MHz
·MTTF > 100 Years
·Two Power Supplies
Package Style: SOIC-8
Typical Performance
Parameters
Units
Application Circuit
Typical
Freq.
MHz
900
2000
2450
900
2000
2450
900
2000
2450
2700
Gain
dB
28
19
18.5
28
19
18.5
28
19
18.5
16.5
S11
dB
-15
-16
-18
-15
-16
-18
-15
-16
-18
-15
S22
dB
-11
-9
-15
-11
-9
-15
-11
-9
-15
-15
dBm
44
44
44
47
45
45
48
48
48
48
dB
9
5
5.1
10
5
5.1
11
5.6
5.1
5.3
P1dB
dBm
30.5
30
30
32
31.5
31.5
32
31.5
31.5
31.5
Current
mA
510
650
870
Voltage
V
4.3
4.7
5
OIP31)
NF
·CDMA
·GSM
·WCDMA
·WiBro
·WLAN
·WiMAX
* Performance tested at 50 W system and a room temperature.
1) OIP3 measured with two tones at an output power of +14 dBm/tone separated by 1 MHz.
Product Specifications*
Parameters
Testing Frequency
Units
Gain
dB
S11
dB
S22
Min
MHz
18
dBm
19
-9
46
48
Noise Figure
dB
Output P1dB
dBm
30
31.5
Current
mA
840
870
Device Voltage
Max
-16
dB
Output IP3
Typ
2000
5.6
V
5.8
900
5
* 100% in-house DC & RF testing is done on packaged products before taping.
Pin Configuration
Absolute Maximum Ratings
Parameters
Rating
Pin No.
Function
1
2nd stage RF IN
Operating Case Temperature
-40 to +85°C
Storage Temperature
-40 to +150°C
2
1st stage RF OUT
+6 V
3,5,8
GND
Operating Junction Temperature
+150°C
4
1st stage RF IN
Input RF Power (CW, 50ohm matched)*
25 dBm
6,7
2nd stage RF OUT
Device Voltage
* Please find the max. input power data from http://www.asb.co.kr/pdf/Maximum_Input_Power_Analysis.pdf
1/12
ASB Inc. · [email protected] · Tel: +82-42-528-7223
February 2010
ASX521
250-3000 MHz MMIC Amplifier
Outline Drawing
Part No.
Symbols
ASX521
●
A
A1
A2
B
C
D
D2
E
E1
E2
e
L
y
q
|L1-L1’|
L1
Pin No.
1
2
3
4
Dimensions (In mm)
MIN
NOM
MAX
1.40
1.50
1.60
0.00
--0.10
--1.45
--0.33
--0.51
0.19
--0.25
4.80
--5.00
3.20
3.30
3.40
5.80
6.00
6.20
3.80
3.90
4.00
2.30
2.40
2.50
--1.27
--0.40
--1.27
----0.10
--0°
8°
----0.12
1.04REF
Function
2nd stage RF IN
1st stage RF OUT
GND
1st stage RF IN
Pin No.
5
6
7
8
Function.
GND
2nd stage RF OUT
2nd stage RF OUT
GND
Note: 1. Backside metal paddle is RF and DC ground.
Mounting Recommendation (in mm)
Note: 1. Add as much copper as possible to inner and outer layers near
the part to ensure optimal thermal performance.
2. To ensure reliable operation, device ground paddle-to-ground
pad soldering is critical.
3. Add mounting screws near the part to fasten the board to a heat
sinker. Ensure that the ground / thermal via region contacts the
heat sinker.
4. A proper heat dissipation path underneath the area of the PCB
for the mounted device is strictly required for proper thermal operation. Damage to the device can result from inappropriate heat
dissipation.
ESD Classification
HBM
Class 1B
Voltage Level: 500 V~1000 V
MM
Class A
Voltage Level: <200 V
CAUTION: ESD-sensitive device!
Moisture Sensitivity Level (MSL)
Level 3 at 260°C reflow
2/12
ASB Inc. · [email protected] · Tel: +82-42-528-7223
February 2010
ASX521
250-3000 MHz MMIC Amplifier
Frequency (MHz)
APPLICATION CIRCUIT
824~849
Magnitude S21 (dB)
30.5
Magnitude S11 (dB)
-14
Magnitude S22 (dB)
-8
CDMA Rx
Output P1dB (dBm)
32
824 ~ 849 MHz
Output IP31) (dBm)
47
Noise Figure (dB)
11
+5 V
Device Voltage (V)
5
Current (mA)
870
1) OIP3 is measured with two tones at an output power of +17
dBm/tone separated by 1 MHz.
2
Board Layout (FR4, 40x40 mm , 0.8T)
Schematic
Vcc=5 V
D1=5.6V
Zener Diode
C6=1 mF
C8=1 mF
C5=100pF
C7=100pF
R2=7.5 W
L1=56 nH
(Coil Inductor)
C4=10 pF
2.5 mm
RF OUT
ASX521
L2=56 nH
RF IN
7 mm
C1=3.9 pF
8 mm
C2=100 pF
R1=15 W
C3=9 pF
S-parameters
35
0
-5
30
-10
S11 (dB)
Gain (dB)
25
20
-15
-20
15
10
600
-25
700
800
900
1000
1100
1200
-30
600
700
800
Frequency (MHz)
900
1000
1100
1200
Frequency (MHz)
5
5
4
Stability Factor
S22 (dB)
0
-5
3
2
-10
1
-15
600
0
700
800
900
1000
1100
1200
0
500
Frequency (MHz)
3/12
1000
1500
2000
2500
3000
3500
Frequency (MHz)
ASB Inc. · [email protected] · Tel: +82-42-528-7223
February 2010
ASX521
250-3000 MHz MMIC Amplifier
Frequency (MHz)
869~894
Magnitude S21 (dB)
APPLICATION CIRCUIT
CDMA Tx
30.5
Magnitude S11 (dB)
-15
Magnitude S22 (dB)
-7.5
Output P1dB (dBm)
32
1)
869 ~ 894 MHz
+5 V
Output IP3 (dBm)
47
Noise Figure (dB)
11
Device Voltage (V)
5
Current (mA)
870
1) OIP3 is measured with two tones at an output power of +16
dBm/tone separated by 1 MHz.
2
Board Layout (FR4, 40x40 mm , 0.8T)
Schematic
Vcc=5 V
D1=5.6V
Zener Diode
C6=1 mF
C8=1 mF
C5=100pF
C7=100pF
R2=6.8 W
L1=56 nH
(Coil Inductor)
C4=12 pF
RF OUT
1.5 mm ASX521
L2=56 nH
RF IN
7 mm
6 mm
C2=100 pF
R1=15 W
C3=7.5 pF
C1=3.3 pF
35
0
30
-5
25
-10
S11 (dB)
Gain (dB)
S-parameters
20
15
10
600
-15
-20
700
800
900
1000
1100
1200
-25
600
700
800
Frequency (MHz)
900
1000
1100
1200
Frequency (MHz)
5
5
4
Stability Factor
S22 (dB)
0
-5
3
2
-10
1
-15
600
0
700
800
900
1000
1100
1200
0
500
Frequency (MHz)
4/12
1000
1500
2000
2500
3000
3500
Frequency (MHz)
ASB Inc. · [email protected] · Tel: +82-42-528-7223
February 2010
ASX521
250-3000 MHz MMIC Amplifier
Frequency (MHz)
APPLICATION CIRCUIT
GSM Rx
890~915
Magnitude S21 (dB)
28
Magnitude S11 (dB)
-15
Magnitude S22 (dB)
-11
Output P1dB (dBm)
32
1)
890 ~ 915 MHz
+5 V
Output IP3 (dBm)
48
Noise Figure (dB)
11
Device Voltage (V)
5
Current (mA)
890
1) OIP3 is measured with two tones at an output power of +15
dBm/tone separated by 1 MHz.
2
Board Layout (FR4, 40x40 mm , 0.8T)
Schematic
Vcc=5 V
D1=5.6V
Zener Diode
C6=1 mF
C8=1 mF
C5=100pF
C7=100pF
R2=6.8 W
L1=56 nH
(Coil Inductor)
C4=12 pF
RF OUT
2 mm ASX521
L2=56 nH
RF IN
7 mm
7 mm
C2=100 pF
R1=15 W
C3=7 pF
C1=2.2 pF
S-parameters
35
0
30
-5
S11 (dB)
Gain (dB)
25
20
-10
-15
15
10
600
700
800
900
1000
1100
1200
-20
600
700
800
Frequency (MHz)
5
0
4
Stability Factor
5
S22 (dB)
-5
-10
-15
-20
600
1000
1100
1200
3
2
1
0
700
800
900
1000
1100
1200
0
500
Frequency (MHz)
5/12
900
Frequency (MHz)
1000
1500
2000
2500
3000
3500
Frequency (MHz)
ASB Inc. · [email protected] · Tel: +82-42-528-7223
February 2010
ASX521
250-3000 MHz MMIC Amplifier
Frequency (MHz)
APPLICATION CIRCUIT
GSM Tx
935~960
Magnitude S21 (dB)
27
Magnitude S11 (dB)
-15
Magnitude S22 (dB)
-11
Output P1dB (dBm)
32
1)
935 ~ 960 MHz
+5 V
Output IP3 (dBm)
47
Noise Figure (dB)
10.5
Device Voltage (V)
5
Current (mA)
870
1) OIP3 is measured with two tones at an output power of +15
dBm/tone separated by 1 MHz.
2
Board Layout (FR4, 40x40 mm , 0.8T)
Schematic
Vcc=5 V
D1=5.6V
Zener Diode
C6=1 mF
C8=1 mF
C5=100pF
C7=100pF
R2=6.8 W
L1=18 nH
(Coil Inductor)
C4=12 pF
L2=33 nH
RF IN
RF OUT
1.5 mm ASX521
C2=100 pF
6 mm
6.5 mm
R1=15 W
C3=7 pF
C1=2.2 pF
S-parameters
35
0
-5
30
-10
S11 (dB)
Gain (dB)
25
20
-15
-20
15
10
600
-25
700
800
900
1000
1100
1200
-30
600
700
800
Frequency (MHz)
900
1000
1100
1200
Frequency (MHz)
5
5
4
Stability Factor
S22 (dB)
0
-5
3
2
-10
1
-15
600
0
700
800
900
1000
1100
1200
0
500
Frequency (MHz)
6/12
1000
1500
2000
2500
3000
3500
Frequency (MHz)
ASB Inc. · [email protected]kr · Tel: +82-42-528-7223
February 2010
ASX521
250-3000 MHz MMIC Amplifier
Frequency (MHz)
1920~1980
Magnitude S21 (dB)
19
Magnitude S11 (dB)
-16
Magnitude S22 (dB)
-9
WCDMA Rx
Output P1dB (dBm)
31.5
1920 ~ 1980 MHz
Output IP31) (dBm)
48
+5 V
Noise Figure (dB)
5.6
APPLICATION CIRCUIT
Device Voltage (V)
5
Current (mA)
870
1) OIP3 is measured with two tones at an output power of +15
dBm/tone separated by 1 MHz.
2
Board Layout (FR4, 40x40 mm , 0.8T)
Schematic
Vcc=5 V
D1=5.6V
Zener Diode
C6=1 mF
C8=1 mF
C5=100pF
C7=100pF
L1=18 nH
(Coil Inductor)
L2=33 nH C4=2.2 pF
(Coil Inductor)
C3=1.2 pF
RF IN
R1=5.1 W
1.5 mm
ASX521
5 mm
RF OUT
L3=2.2 nH
C1=2 pF
C2=1.5 pF
30
0
25
-5
20
-10
S11 (dB)
Gain (dB)
S-parameters
15
o
-40 c
25oc
85oc
10
-20
5
0
1700
-15
-40oc
25oc
85oc
-25
1800
1900
2000
2100
2200
-30
1700
1800
1900
Frequency (MHz)
5
-5
4
Stability Factor
0
S22 (dB)
-10
-15
-40oc
25oc
85oc
-20
-25
1700
1800
1900
2000
2100
2200
2100
3
2
1
2200
0
0
500
Frequency (MHz)
7/12
2000
Frequency (MHz)
1000
1500
2000
2500
3000
3500
Frequency (MHz)
ASB Inc. · [email protected] · Tel: +82-42-528-7223
February 2010
ASX521
250-3000 MHz MMIC Amplifier
Gain vs. Temperature
960
26
920
24
880
22
Gain (dB)
Current (mA)
Current vs. Temperature
840
800
18
760
720
-60
20
Frequency = 1950 MHz
16
-40
-20
0
20
40
60
80
14
-60
100
-40
-20
0
Temperature (oC)
20
40
60
80
100
Temperature (oC)
Output IP3 vs. Tone Power (Frequency = 1950 MHz)
P1dB vs. Temperature
36
65
60
34
Output IP3 (dBm)
P1dB (dBm)
55
32
30
45
40
-40oc
25oc
85oc
35
Frequency = 1950 MHz
28
50
30
26
-60
-40
-20
0
20
40
60
80
100
25
10
11
Temperature (oC)
8/12
12
13
14
15
16
17
18
19
20
Pout per Tone (dBm)
ASB Inc. · [email protected] · Tel: +82-42-528-7223
February 2010
ASX521
250-3000 MHz MMIC Amplifier
Frequency (MHz)
APPLICATION CIRCUIT
2110~2170
Magnitude S21 (dB)
18
Magnitude S11 (dB)
-15
Magnitude S22 (dB)
-7
WCDMA Tx
Output P1dB (dBm)
31.5
2110 ~ 2170 MHz
Output IP31) (dBm)
48
Noise Figure (dB)
7.5
+5 V
Device Voltage (V)
5
Current (mA)
870
1) OIP3 is measured with two tones at an output power of +15
dBm/tone separated by 1 MHz.
2
Board Layout (FR4, 40x40 mm , 0.8T)
Schematic
Vcc=5 V
D1=5.6V
Zener Diode
C6=1 mF
C8=1 mF
C5=100pF
C7=100pF
L1=18 nH
(Coil Inductor)
L2=33 nH C4=1.5 pF
(Coil Inductor)
C3=1.2 pF
RF IN
R1=5.1 W
1 mm
ASX521
4.5 mm
RF OUT
L3=1.8 nH
C1=1.5 pF
C2=0.5 pF
25
0
20
-5
15
-10
S11 (dB)
Gain (dB)
S-parameters
10
5
0
1900
-15
-20
2000
2100
2200
2300
2400
-25
1900
2000
2100
Frequency (MHz)
5
-5
4
Stability Factor
0
S22 (dB)
-10
-15
-20
-25
1900
2300
2400
3
2
1
2000
2100
2200
2300
2400
0
0
500
Frequency (MHz)
9/12
2200
Frequency (MHz)
1000
1500
2000
2500
3000
3500
Frequency (MHz)
ASB Inc. · [email protected] · Tel: +82-42-528-7223
February 2010
ASX521
250-3000 MHz MMIC Amplifier
Frequency (MHz)
APPLICATION CIRCUIT
2300~2400
Magnitude S21 (dB)
18
Magnitude S11 (dB)
-17
Magnitude S22 (dB)
-11
WiBro
Output P1dB (dBm)
31
2300 ~ 2400 MHz
Output IP31) (dBm)
46.5
Noise Figure (dB)
6.5
Device Voltage (V)
5
+5 V
Current (mA)
870
1) OIP3 is measured with two tones at an output power of +15
dBm/tone separated by 1 MHz.
2
Schematic
Board Layout (FR4, 40x40 mm , 0.8T)
Vcc=5 V
D1=5.6V
Zener Diode
C6=1 mF
*C4 shall be placed as close as
possible to the pin.
C8=1 mF
C5=100pF
C7=100pF
L1=27 nH
(Coil Inductor)
L2=27 nH C4=1.5 pF
(Coil Inductor)
C2=56 pF RF OUT
ASX521
RF IN
R1=5 W
C3=1.8 pF
C1=1.5 pF
25
0
20
-5
15
-10
S11 (dB)
Gain (dB)
S-parameters & K-factor
10
5
0
1800
-15
-20
2000
2200
2400
2600
2800
3000
-25
1800
2000
2200
Frequency (MHz)
5
5
4
Stability Factor
10
S22 (dB)
0
-5
-10
-15
1800
2600
2800
3000
3
2
1
0
2000
2200
2400
2600
2800
3000
0
500
Frequency (MHz)
10/12
2400
Frequency (MHz)
1000
1500
2000
2500
3000
3500
Frequency (MHz)
ASB Inc. · [email protected] · Tel: +82-42-528-7223
February 2010
ASX521
250-3000 MHz MMIC Amplifier
Frequency (MHz)
APPLICATION CIRCUIT
2400~2500
Magnitude S21 (dB)
18.5
Magnitude S11 (dB)
-18
Magnitude S22 (dB)
-15
WLAN
Output P1dB (dBm)
31.5
2400 ~ 2500 MHz
Output IP31) (dBm)
48
Noise Figure (dB)
5.1
+5 V
Device Voltage (V)
5
Current (mA)
870
1) OIP3 is measured with two tones at an output power of +14
dBm/tone separated by 1 MHz.
2
Board Layout (FR4, 40x40 mm , 0.8T)
Schematic
Vcc=5 V
D1=5.6V
Zener Diode
C7=1 mF
C9=1 mF
C6=100pF
C8=100pF
L1=10 nH
(Coil Inductor)
L2=22 nH C5=1 pF
(Coil Inductor)
C3=100 pF
2 mm ASX521
RF IN
RF OUT
C1=5 pF
C4=1.5 pF
C2=1.8 pF
25
0
20
-5
15
-10
S11 (dB)
Gain (dB)
S-parameters
10
5
0
1800
-15
-20
2000
2200
2400
2600
2800
3000
-25
1800
2000
2200
Frequency (MHz)
5
-5
4
Stability Factor
0
S22 (dB)
-10
-15
-20
-25
1800
2600
2800
3000
3
2
1
0
2000
2200
2400
2600
2800
3000
500
Frequency (MHz)
11/12
2400
Frequency (MHz)
1000
1500
2000
2500
3000
3500
Frequency (MHz)
ASB Inc. · [email protected] · Tel: +82-42-528-7223
February 2010
ASX521
250-3000 MHz MMIC Amplifier
Frequency (MHz)
APPLICATION CIRCUIT
2600~2700
Magnitude S21 (dB)
16.5
Magnitude S11 (dB)
-15
Magnitude S22 (dB)
-15
WiMAX
Output P1dB (dBm)
31.5
2600 ~ 2700 MHz
Output IP31) (dBm)
48
Noise Figure (dB)
5.3
+5 V
Device Voltage (V)
5
Current (mA)
870
1) OIP3 is measured with two tones at an output power of +15
dBm/tone separated by 1 MHz.
2
Board Layout (FR4, 40x40 mm , 0.8T)
Schematic
Vcc=5 V
D1=5.6V
Zener Diode
C7=1 mF
C9=1 mF
C6=100pF
C8=100pF
L1=10 nH
(Coil Inductor)
L2=22 nH C5=1 pF
(Coil Inductor)
C3=100 pF
1 mm ASX521
RF IN
C1=5 pF
RF OUT
C4=1.5 pF
C2=1.8 pF
25
0
20
-5
15
-10
S11 (dB)
Gain (dB)
S-parameters
10
5
0
2000
-15
-20
2200
2400
2600
2800
3000
3200
-25
2000
2200
2400
Frequency (MHz)
5
-5
4
Stability Factor
0
S22 (dB)
-10
-15
-20
-25
2000
2800
3000
3200
3
2
1
2200
2400
2600
2800
3000
3200
0
0
500
Frequency (MHz)
12/12
2600
Frequency (MHz)
1000
1500
2000
2500
3000
3500
Frequency (MHz)
ASB Inc. · [email protected] · Tel: +82-42-528-7223
February 2010