AMMP-5618 6–20 GHz General Purpose Amplifier Data Sheet Description Features Avago’s AMMP-5618 is a high power, medium gain amplifier that operates from 6 GHz to 20 GHz. The amplifier is designed to be an easy-to-use component for any surface mount PCB application. In c ommunication systems, it can be used as a LO buffer, or as a transmit driver amplifier. During typical o peration with a single 5V supply, each gain stage is biased for Class-A operation for optimal power output with minimal distortion. The amplifier has integrated 50Ω I/O match, DC blocking, self-bias and choke to eliminate complex tuning and assembly processes typically required by hybrid (discreteFET) amplifiers. The package is fully SMT compatible with backside grounding and I/O to simplify assembly. • 5 x 5 mm surface mount package • Broad band performance 6–20 GHz • High +19 dBm output power • Medium 13 dB typical gain • 50Ω input and output match • Single 5V (107 mA) supply bias Applications • Microwave radio systems • Satellite VSAT • Commercial grade military Note: These devices are ESD sensitive. The following precautions are strongly recommended. Ensure that an ESD approved carrier is used when dice are transported from one destination to another. Personal grounding is to be worn at all times when handling these devices. Package Diagram NC 1 Functional Block Diagram Vd 2 NC 1 2 3 3 4 8 RF IN 8 4 RF OUT 7 7 6 5 NC NC NC Attention: Observe precautions for handling electrostatic sensitive devices. ESD Machine Model (Class A) = 50V ESD Human Body Model (Class 0) = 150V Refer to Avago Application Note A004R: Electrostatic Discharge Damage and Control. 6 5 Pin Function 1 2 3 4 5 6 7 8 NC Vd NC RF_out NC NC NC RF_in Electrical Specifications 1. Small/Large -signal data measured in a fully de-embedded test fixture form TA = 25°C, Vd=5V, Idq=107mA. 2. Pre-assembly into package performance verified 100% on-wafer per AMMC-5618 published specifications 3. This final package part performance is verified by a functional test correlated to actual performance at one or more frequencies 4. Specifications are derived from measurements in a 50Ω test environment. Aspects of the amplifier performance may be improved over a more narrow bandwidth by application of additional conjugate, linearity, or low noise (Γopt) matching. Table 1. RF Electrical Characteristics (TA= 25°C, Vd= 5.0V, Idq=107 mA, Zo=50 Ω) Parameter Typ. Sigma Unit Frequency Small-signal Gain, Gain 12 13 0.40 dB 5-6 GHz Noise Figure into 50 Ω, NF 4.4 0.2 dB Output Power at 1dB Gain Compression, P1dB 19 0.9 dBm Third Order Intercept Point; ∆f=100MHz; Pin=-20dBm, OIP3 25 30 1.2 dBm Input Return Loss, RLin -12 0.7 dB Output Return Loss, Rlout -12 0.6 dB Reverse Isolation, Isolation -40 1.2 dB 5-6 GHz Table 2. Recommended Operating Range 1. Ambient operational temperature TA = 25°C unless otherwise noted. 2. Channel-to-backside Thermal Resistance (Tchannel (Tc) = 34°C) as measured using infrared microscopy. Thermal Resistance at backside temperature (Tb)= 25°C calculated from measured data. Specifications Description Min. Drain Supply Current, Id Typical Max. Unit Comments 107 140 mA (Vd = 5 V, Under any RF power drive and temperature Table 3. Thermal Properties Parameter Test Conditions Value Thermal Resistance, qch-b Backside Temperature, TA =25°C qch-b = 34 °C/W Absolute Minimum and Maximum Ratings Table 4. Minimum and Maximum Ratings Specifications Description Min. Positive Drain Voltage, Vd Max. 7 Unit V Drain Current, Id 150 mA RF Input Power (Pin), RFin 20 dBm Channel Temperature, Tch Storage Temperature, Tstg -65 Max. Assembly Temp, Tmax +300 +150 °C +150 °C °C Notes: 1. Operation in excess of any one of these conditions may result in permanent damage to this device. 2 Comments CW 30 second maximum Selected performance plots 15 0 12 -10 9 -20 S12 (dB) S21 (dB) These measurements are in 50Ω test environment at TA = 25°C, Vd = 5V, Id = 107 mA. Aspects of the amplifier performance may be improved over a narrower bandwidth by application of additional conjugate, linearity or low noise (Γopt) matching. 6 -30 -40 3 0 4 6 8 10 12 14 16 FREQUENCY (GHz) 18 20 0 -5 -5 -10 -10 S22 (dB) 0 -15 -20 -25 -25 4 6 8 10 12 14 16 FREQUENCY (GHz) 18 20 -30 22 18 20 22 4 6 8 10 12 14 16 FREQUENCY (GHz) 18 20 22 30 7 25 OP-1dB (dBm) NF (dB) 10 12 14 16 FREQUENCY (GHz) 35 8 6 5 4 20 15 10 OP1dB OIP3 5 6 8 10 Figure 5. Noise Figure. 3 8 Figure 4. Output Return Loss. Figure 3. Input Return Loss. 3 6 -15 -20 -30 4 Figure 2. Isolation. Figure 1. Gain. S11 (dB) -50 22 12 14 16 FREQUENCY (GHz) 18 20 0 6 8 10 12 14 16 FREQUENCY (GHz) Figure 6. Typical Power, OP-1dB and OIP3. 18 20 Over Temperature Performance Plots These measurements are in 50Ω test environment at TA = 25°C, Vd = 5V, Id = 107 mA. Aspects of the amplifier performance may be improved over a narrower bandwidth by application of additional conjugate, linearity or low noise (Γopt) matching. 20 0 15 -10 -20 S12 (dB) S21 (dB) 10 5 -30 -40 25°C −40°C 85°C 0 -5 4 6 8 10 12 14 16 FREQUENCY (GHz) -50 18 20 -60 22 Figure 7. Gain Over Temperature. 4 6 8 10 12 14 16 FREQUENCY (GHz) 18 20 22 20 22 Figure 8. Isolation Over Temperature. 0 0 25°C −40°C 85°C 25°C −40°C 85°C -5 -10 S22 (dB) -5 S11 (dB) 25°C −40°C 85°C -10 -15 -20 -15 -20 -25 4 6 8 10 12 14 16 FREQUENCY (GHz) 18 20 -30 22 Figure 9. Input RL Over Temperature. 6 8 10 12 14 16 FREQUENCY (GHz) 108 25°C −40°C 85°C 7 106 104 Idd (mA) 6 5 102 100 98 4 3 25°C −40°C 85°C 96 6 8 10 12 14 16 FREQUENCY (GHz) Figure 11. NF Over Temperature. 4 18 Figure 10. Output Return Loss Over Temperature. 8 NF (dB) 4 18 20 94 3 3.5 4 Vdd (V) Figure 12. Bias Current Over Temperature. 4.5 5 Over Voltage plots These measurements are in 50Ω test environment at TA = 25°C, Vd = 5V, Id = 107 mA. Aspects of the amplifier performance may be improved over a narrower bandwidth by application of additional conjugate, linearity or low noise (Γopt) matching. 0 16 3V 4V 5V -10 -20 S12 (dB) S21 (dB) 12 8 -40 3V 4V 5V 4 0 -30 4 6 8 10 12 14 16 FREQUENCY (GHz) -50 18 20 -60 22 0 3V 4V 5V 18 20 18 20 18 20 3V 4V 5V -15 S22 (dB) S11 (dB) 16 -10 -10 -20 -25 -30 4 6 8 10 12 14 FREQUENCY (GHz) 16 18 -35 20 Figure 15. Input RL Over Vdd. 4 6 8 10 12 14 FREQUENCY (GHz) 16 Figure 16. Output Return Loss Over Vdd. 35 20 30 16 25 12 OIP3 (dBm) OP-1dB (dBm) 10 12 14 FREQUENCY (GHz) -5 -15 8 6 8 10 12 14 16 FREQUENCY (GHz) Figure 17. Output Power Over Vdd. 20 15 10 3V 4V 5V 4 5 8 0 -5 0 6 Figure 14. Isolation Over Vdd. Figure 13. Gain Over Vdd. -20 4 3V 4V 5V 5 18 20 0 6 8 10 12 14 16 FREQUENCY (GHz) Figure 18. OIP3 Over Vdd. Typical Scattering Parameters Biasing and Operation Please refer to <http://www.avagotech.com> for typical scattering parameters data. The AMMC-5618 is normally biased with a single positive drain supply connected to both VD pins through bypass capacitors as shown in Figure 19. The recommended supply voltage is 5V. It is important to have 0.1 µF bypass capacitor, and the capacitor should be placed as close to the component as possible. The AMMC-5618 does not require a negative gate voltage to bias any of the two stages. No ground wires are needed because all ground connections are made with plated through-holes to the backside of the package. Refer to the Absolute Maximum Ratings table for allowed DC and thermal conditions. Application Circuit Vd (Typ 5V) 0.1 F 1 RFin 2 3 RFout 4 8 7 6 Figure 21. Demonstration Board (available upon request). 5 BASE GND Figure 19. Typical Application. VD2 VD1 Feedback Network Feedback Network Matching Matching RF Input RF Output Matching VG1 Figure 20. Simplified MMIC Schematic. 6 VG2 Package Dimension, PCB Layout and Tape and Reel information Please refer to Avago Technologies Application Note 5520, AMxP-xxxx production Assembly Process (Land Pattern A). Part Number Ordering Information Part Number Devices per Container Container AMMP-5618-BLK 10 antistatic bag AMMP-5618-TR1 100 7” Reel AMMP-5618-TR2 500 7” Reel For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries. Data subject to change. Copyright © 2005-2013 Avago Technologies. All rights reserved. Obsoletes 5989-3545EN AV02-0485EN - July 8, 2013