COMSET 2N5322_12

PNP 2N5322 – 2N5323
SILICON PLANAR EPITAXIAL TRANSISTORS
The 2N5322 and 2N5323 are PNP transistors mounted in TO-39 metal case .
They are especially intended for high-voltage medium power applications in industrial and
commercial equipements.
Compliance to RoHS
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCEO
Collector-Emitter Voltage (IB = 0)
VCBO
Collector-Base Voltage (IE = 0)
VCEV
Collector-Emitter Voltage (VBE = 1.5V)
VEBO
Emitter-Base Voltage (IC = 0)
IC
Collector Current
IB
Base Current
@ Tamb = 25°
PD
Total Power Dissipation
@ Tcase= 25°
TJ
Junction Temperature
TStg
Storage Temperature range
Value
2N5322
2N5323
2N5322
2N5323
2N5322
2N5323
2N5322
2N5323
2N5322
2N5323
2N5322
2N5323
2N5322
2N5323
2N5322
2N5323
2N5322
2N5323
2N5322
2N5323
-75
-50
-100
-75
-100
-75
-6
-5
Unit
V
V
V
V
-2
A
-1
A
1
W
10
-65 to +200
°C
-65 to +200
°C
Value
Unit
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJ-a
Thermal Resistance, Junction to ambient
175
°C/W
RthJ-c
Thermal Resistance, Junction to case
17.5
°C/W
COMSET SEMICONDUCTORS
1/3
PNP 2N5322 – 2N5323
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCEO
VCEV
VEBO
hFE (1)
VCE(SAT)
(1)
VBE (1)
fT
ton
toff
Collector Emitter
Breakdown Voltage
Collector Emitter
Breakdown Voltage
Emitter Base Breakdown
Voltage
VCB = -80 V, IE =0
VCB = -60 V, IE =0
VEB = -5 V, IC =0
VEB = -4 V, IC =0
IC = -10 mA, IB =0
IC = -100 µA
VBE = 1.5V
IE = -100 µA
IC =0
IC = -500 mA
VCE = -4 V
DC Current Gain
IC = -1 A
VCE = -2 V
Collector-Emitter saturation IC = -500 mA
Voltage
IB = -50 mA
IC = -500 mA
Base-Emitter Voltage
VCE = -4 V
IC = -50 mA
VCE = -4 V
Transition frequency
f = 10 MHz
IC = -500 mA
Turn-on Time
VCC = -30 V
IB1 = -50 mA
IC = 500 mA
Turn-off Time
VCC = 30 V
IB1 = -IB2 = -50 mA
Min
Typ
Max
2N5322
2N5323
2N5322
2N5323
2N5322
2N5323
2N5322
2N5323
2N5322
2N5323
2N5322
2N5323
-75
-50
-100
-75
-6
-5
30
40
-0.1
-0.5
-
-0.5
-5
130
250
2N5322
10
-
-
2N5322
2N5323
2N5322
2N5323
2N5322
-
-
-0.7
-1.2
-1.1
-1.4
50
-
-
MHz
-
-
100
ns
-
-
1000
ns
2N5323
2N5322
Unit
µA
µA
V
V
V
-
V
V
2N5323
2N5322
2N5323
(1) Pulse conditions : tp < 300 µs, δ =1%
17/10/2012
COMSET SEMICONDUCTORS
2/3
PNP 2N5322 – 2N5323
MECHANICAL DATA CASE TO-39
DIMENSIONS (mm)
min
max
A
8.50
9.39
B
7.74
8.50
C
6.09
6.60
D
0.40
0.53
E
-
0.88
F
2.41
2.66
G
4.82
5.33
H
0.71
0.86
J
0.73
1.02
K
12.70
-
L
42°
48°
Pin 1 :
Emitter
Pin 2 :
Base
Pin 3 :
Collector
Case :
Collector
Revised September 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and
all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical
components in life support devices or systems.
www.comsetsemi.com
17/10/2012
info@comsetsemi.com
COMSET SEMICONDUCTORS
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