COMSET BSV16

PNP BSV15 – BSV16 – BSV17
MEDIUM POWER TRANSISTORS
They are silicon transistors mounted in TO-39 metal package.
They are intended for general industrial applications.
High current and low voltage.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
Value
BSV15
BSV16
BSV17
BSV15
BSV16
BSV17
-40
-60
-90
-40
-60
-90
Unit
VCBO
Collector-Base Voltage
IE = 0
VCEO
Collector-Emitter Voltage
IB = 0
VEBO
Emitter-Base Voltage
IC = 0
-5
V
IC
Collector Current
-1
A
ICM
Peak Collector Current
-2
A
IBM
Peak Base Current
-0.2
A
Ptot
Total Power
Dissipation
TJ
TStg
Tamb
Junction Temperature
Storage Temperature Range
Operating Ambient Temperature
@ Tcase= < 25°
@ Tamb= < 25°
@ Tmb= < 50°
V
V
0.8
5
5
200
-65 to +150
-65 to +150
°C
°C
°C
Value
Unit
W
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJ-c
Thermal Resistance, Junction-case
35
K/ W
RthJ-amb
Thermal Resistance, Junction-ambient in free air
220
K/ W
RthJ-mb
Thermal Resistance, Junction to mounting base
30
K/ W
09/11/2012
COMSET SEMICONDUCTORS
1|4
PNP BSV15 – BSV16 – BSV17
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
ICBO
IEBO
VCE(SAT)
VBE
hFE
Ratings
Test Condition(s)
IE= 0, VCB= -40 V
BSV15
IE= 0, VCB = -60 V
BSV16
IE= 0, VCB = -80 V
BSV17
Collector – Cutoff
Current
VCB =-40 V BSV15
IE= 0, V
VCB =-60 V BSV16
Tamb = 150°c
VCB =-80 V BSV17
BSV15
Emitter – Cutoff
IC= 0, VCE= -4V
BSV16
Current
BSV17
BSV15
Collector-Emitter
BSV16
I = -500 mA, IB= -25 mA
saturation Voltage (*) C
BSV17
BSV15
IC= -100 mA, VCE= -1V
BSV16
BSV17
Base-Emitter Voltage
(*)
BSV15
IC= -500 mA, VCE= -1V
BSV16
BSV17
BSV15
Gr.10
BSV16
IC= -100 µA
BSV17
VCE= -1 V
BSV15
Gr.16
BSV16
BSV15
Gr.10
BSV16
IC= -100 mA
DC Current Gain (*)
BSV17
VCE= -1 V
BSV15
Gr.16
BSV16
BSV15
Gr.10
BSV16
IC= -500 mA
BSV17
VCE= -1 V
BSV15
Gr.16
BSV16
12/11/2012
COMSET SEMICONDUCTORS
Min
Typ
Max
Unit
-
-
-100
nA
-
-
-50
µA
-
-
-50
nA
-
-
-1
V
-
-
-1
-
-
-1
20
75
-
30
120
-
63
100
160
V
100
160
250
25
55
-
35
85
-
2/4
PNP BSV15 – BSV16 – BSV17
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
fT
Transition Frequency
IC= -50 mA, VCE= -10 V
f=100 MHz
CC
Collector
Capacitance
IE= ie = 0, VCB= -10V
f = 1 MHZ
Emitter Capacitance
IE= ie = 0, VCB= -10V
f = 1 MHZ
CE
BSV15
BSV16
BSV17
Min
Typ
Max
Unit
50
-
-
MHZ
-
20
30
-
15
25
-
180
-
pF
Min
Typ
Max
Unit
-
-
650
ns
-
-
500
ns
pF
SWITCHING TIME
Symbol
Ratings
toff
Turn-off times
ton
Turn-on times
Test Condition(s)
IC= -100 mA
IBon= -5 mA
IBoff= 5 mA
(*) Pulsed : pulse duration = 300µs, duty cycle = 1%
12/11/2012
COMSET SEMICONDUCTORS
3/4
PNP BSV15 – BSV16 – BSV17
MECHANICAL DATA CASE TO-39
DIMENSIONS (mm)
min
max
A
8.50
9.39
B
7.74
8.50
C
6.09
6.60
D
0.40
0.53
E
-
0.88
F
2.41
2.66
G
4.82
5.33
H
0.71
0.86
J
0.73
1.02
K
12.70
-
L
42°
48°
Pin 1 :
Emitter
Pin 2 :
Base
Pin 3 :
Collector
Case :
Collector
Revised October 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and
all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical
components in life support devices or systems.
www.comsetsemi.com
12/11/2012
info@comsetsemi.com
COMSET SEMICONDUCTORS
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