NPN 2N2894 HIGH-SPEED SATURATED SWITCHES The 2N2894 are silicon planar epitaxial PNP transistors mounted in TO-18 metal package. They are intended for high speed, low saturation switching applications up to 100 mA. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit -12 -12 -12 -4 -200 0.36 V V V V mA @ Tcase= 25° 1.2 W @ Tcase<100° °C VCEO VCBO VCES VEBO IC Collector-Emitter Voltage (IB = 0) Collector-Base Voltage (IE = 0) Collector-Emitter Voltage(VBE = 0) Emitter-Base Voltage (IC = 0) Collector Current @ Tamb = 25° PD Total Power Dissipation TJ Junction Temperature 1 -65 to +200 TStg Storage Temperature range -65 to +200 °C Value Unit THERMAL CHARACTERISTICS Symbol Ratings RthJ-a Thermal Resistance, Junction-ambient 486 °C/ W RthJ-c Thermal Resistance, Junction-case 146 °C/ W COMSET SEMICONDUCTORS 1/3 NPN 2N2894 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) ICBO Collector Cutoff Current ICES Collector Cutoff Current Collector Emitter Breakdown Voltage Collector Emitter Breakdown Voltage Collector Base Breakdown Voltage Emitter Base Breakdown Voltage VCEO (*) VCES VCBO VEBO Min Typ Max Unit - - -10 µA - - -80 nA IC =-10 mA, IB =0 -12 - - V VBE =0 V, IC =-10 µA -12 - - V IC =-10 µA, IE =0 -12 - - V IE =-100 µA, IC =0 -4 - - V 30 40 25 - 150 - - 17 - - -0.78 -0.85 - - -0.15 -0.2 -0.5 -0.98 -1.2 -1.7 V 400 - - MHz - - 6 pF - - 6 pF - - 60 - - 90 VCB =-6 V, IE =0V Tj =125°C VBE =0 V, VCE =-6 V IC =-10 mA, VCE =-0.3 V IC =-30 mA, VCE =-0.5 V hFE (*) DC Current Gain IC =-100 mA, VCE =-1 V IC =150 mA, VCE =10 V Tamb = -55° IC =-10 mA, IB =-1 mA Collector-Emitter saturation VCE(SAT) (*) IC =-30 mA, IB =-3 mA Voltage IC =-100 mA, IB =-10 mA IC =-10 mA, IB =-1 mA VBE(SAT) (*) Base-Emitter saturation Voltage IC =-30 mA, IB =-3 mA IC =-100 mA, IB =-10 mA IC =-30 mA, VCE =-10 V Transition frequency fT f = 100MHz IE = 0 ,VCB =-5 V Collector-Base Capacitance CCBO f = 1MHz IC = 0 ,VEB =-0.5 V Emitter-Base Capacitance CEBO f = 1MHz IC =-30 mA, VCC =-2 V Turn-on Time ton IB1 = -1.5mA IC =-30 mA, VCC =-2 V Turn-off Time toff IB1 = -IB2 = -1.5mA ns (*) Pulse conditions : tp < 300 µs, δ =1% 15/10/2012 COMSET SEMICONDUCTORS 2|3 NPN 2N2894 MECHANICAL DATA CASE TO-18 DIMENSIONS (mm) min A B C D E F G H I L max 12.7 0.9 2.54 45° Pin 1 : Pin 2 : Pin 3 : Case : 0.49 5.3 4.9 5.8 1.2 1.16 - emitter base Collector Collector Revised August 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems. www.comsetsemi.com 15/10/2012 [email protected] COMSET SEMICONDUCTORS 3|3