COMSET 2N2894

NPN 2N2894
HIGH-SPEED SATURATED SWITCHES
The 2N2894 are silicon planar epitaxial PNP transistors mounted in TO-18 metal package.
They are intended for high speed, low saturation switching applications up to 100 mA.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
Value
Unit
-12
-12
-12
-4
-200
0.36
V
V
V
V
mA
@ Tcase= 25°
1.2
W
@ Tcase<100°
°C
VCEO
VCBO
VCES
VEBO
IC
Collector-Emitter Voltage (IB = 0)
Collector-Base Voltage (IE = 0)
Collector-Emitter Voltage(VBE = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
@ Tamb = 25°
PD
Total Power Dissipation
TJ
Junction Temperature
1
-65 to +200
TStg
Storage Temperature range
-65 to +200
°C
Value
Unit
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJ-a
Thermal Resistance, Junction-ambient
486
°C/ W
RthJ-c
Thermal Resistance, Junction-case
146
°C/ W
COMSET SEMICONDUCTORS
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NPN 2N2894
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
ICBO
Collector Cutoff Current
ICES
Collector Cutoff Current
Collector Emitter Breakdown
Voltage
Collector Emitter Breakdown
Voltage
Collector Base Breakdown
Voltage
Emitter Base Breakdown
Voltage
VCEO (*)
VCES
VCBO
VEBO
Min
Typ
Max
Unit
-
-
-10
µA
-
-
-80
nA
IC =-10 mA, IB =0
-12
-
-
V
VBE =0 V, IC =-10 µA
-12
-
-
V
IC =-10 µA, IE =0
-12
-
-
V
IE =-100 µA, IC =0
-4
-
-
V
30
40
25
-
150
-
-
17
-
-
-0.78
-0.85
-
-
-0.15
-0.2
-0.5
-0.98
-1.2
-1.7
V
400
-
-
MHz
-
-
6
pF
-
-
6
pF
-
-
60
-
-
90
VCB =-6 V, IE =0V
Tj =125°C
VBE =0 V, VCE =-6 V
IC =-10 mA, VCE =-0.3 V
IC =-30 mA, VCE =-0.5 V
hFE (*)
DC Current Gain
IC =-100 mA, VCE =-1 V
IC =150 mA, VCE =10 V
Tamb = -55°
IC =-10 mA, IB =-1 mA
Collector-Emitter saturation
VCE(SAT) (*)
IC =-30 mA, IB =-3 mA
Voltage
IC =-100 mA, IB =-10 mA
IC =-10 mA, IB =-1 mA
VBE(SAT) (*) Base-Emitter saturation Voltage IC =-30 mA, IB =-3 mA
IC =-100 mA, IB =-10 mA
IC =-30 mA, VCE =-10 V
Transition frequency
fT
f = 100MHz
IE = 0 ,VCB =-5 V
Collector-Base Capacitance
CCBO
f = 1MHz
IC = 0 ,VEB =-0.5 V
Emitter-Base Capacitance
CEBO
f = 1MHz
IC =-30 mA, VCC =-2 V
Turn-on Time
ton
IB1 = -1.5mA
IC =-30 mA, VCC =-2 V
Turn-off Time
toff
IB1 = -IB2 = -1.5mA
ns
(*) Pulse conditions : tp < 300 µs, δ =1%
15/10/2012
COMSET SEMICONDUCTORS
2|3
NPN 2N2894
MECHANICAL DATA CASE TO-18
DIMENSIONS (mm)
min
A
B
C
D
E
F
G
H
I
L
max
12.7
0.9
2.54
45°
Pin 1 :
Pin 2 :
Pin 3 :
Case :
0.49
5.3
4.9
5.8
1.2
1.16
-
emitter
base
Collector
Collector
Revised August 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and
all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical
components in life support devices or systems.
www.comsetsemi.com
15/10/2012
[email protected]omsetsemi.com
COMSET SEMICONDUCTORS
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