SEMICONDUCTOR 2N7002 TECHNICAL DATA N CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR INTERFACE AND SWITCHING APPLICATION. FEATURES High density cell design for low RDS(ON). E B L L Voltage controlled small signal switch. 2 A H 1 P Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS 20 J UNIT MILLIMETERS _ 0.20 2.93 + B C 1.30+0.20/-0.15 1.30 MAX D 0.45+0.15/-0.05 E G 2.40+0.30/-0.20 1.90 H J 0.95 0.13+0.10/-0.05 K 0.00 ~ 0.10 L 0.55 0.20 MIN 1.00+0.20/-0.10 7 M N P M K RATING P N SYMBOL C ) CHARACTERISTIC 3 G High saturation current capablity. MAXIMUM RATING (Ta=25 D Rugged and reliable. DIM A V 1. SOURCE ID 300 IDP 1200 Drain Power Dissipation (Note 2) PD 300 Junction Temperature Tj 150 Tstg -55 150 Continuous Drain Current Pulsed (Note 1) Storage Temperature Range Note 1) Pulse Width 10 , Duty Cycle 2. GATE mA 3. DRAIN mW SOT-23 1% Note 2) Package mounted on a glass epoxy PCB(100mm2 1mm) EQUIVALENT CIRCUIT D Marking Lot No. G Type Name WA S THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE. PLEASE HANDLE WITH CAUTION. ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=10 A 60 - - V Zero Gate Voltage Drain Current IDSS VDS=60V, VGS=0V - - 1 A Gate-Body Leakage, Forward IGSSF VGS=20V, VDS=0V - - 100 nA Gate-Body Leakage, Reverse IGSSR VGS=-20V, VDS=0V - - -100 nA 2009. 11. 17 Revision No : 4 1/4 2N7002 ELECTRICAL CHARACTERISTICS (Ta=25 ) ON CHARACTERISTICS (Note 3) CHARACTERISTIC SYMBOL TEST CONDITION Vth Gate Threshold Voltage RDS(ON) Drain-Source ON Resistance VDS(ON) Drain-Source ON Voltage ID(ON) On State Drain Current MIN. TYP. MAX. UNIT VDS=VGS, ID=250 A 1.1 1.8 2.3 V VGS=10V, ID=500mA - 1.2 1.8 VGS=5V, ID=50mA - 1.5 2.1 VGS=10V, ID=500mA - 0.6 0.9 VGS=5V, ID=50mA - 0.075 0.105 VGS=10V, VDS= 2 VDS(ON) 500 - - mA 200 580 - mS - 0.78 1.15 V MIN. TYP. MAX. UNIT - 47.1 - - 3.5 - - 8.8 - V Forward Transconductance gFS VDS=10V, ID=500mA Drain-Source Diode Forward Voltage VSD VGS=0V, IS=200mA (Note1) (Note 3) Pulse Test : Pulse Width 80 , Duty Cycle 1% DYNAMIC CHARACTERISTICS CHARACTERISTIC SYMBOL Input Capacitance Ciss Reverse Transfer Capacitance Crss Output Capacitance Coss TEST CONDITION VDS=25V, VGS=0V, f=1MHz Turn-On Time ton VDD=30V, RL=155 , ID=190mA, - 8.8 - Turn-Off Time toff VGS=10V - 14.8 - Switching Time pF nS SWITCHING TIME TEST CIRCUIT V DD t off t on t d(on) tr RL V IN t d(off) V OUT D OUTPUT, V OUT tf 90% 90% 10% 10% INVERTED V GS DUT G 90% INPUT, V IN 50% 50% 10% S 2009. 11. 17 Revision No : 4 PULSE WIDTH 2/4 2N7002 I D - V DS V 10 DRAIN CURRENT ID (A) COMMON SOURCE 6V DRAIN SOURCE ON- RESISTANCER RDS(ON) (Ω) 1.5 R DS(ON) - I D 5V Ta=25 C 1.2 0.9 4V 0.6 0.3 VGS =3V 0 0 1 2 3 4 6 VGS=3V 5 4 3 4V 2 10V COMMON SOURCE Ta=25 C 0 5 0.1 0.2 0.3 DRAIN SOURCE ON- RESISTANCE RDS (Ω) DRAIN CURRENT I D (A) 3 VGS =5V ID =50mA 1 VGS =10V ID =500mA -50 0 COMMON SOURCE VGS =10V 0.6 125 C -55 C 0.3 25 C 0.0 50 100 150 0 1 1.2 1 0.8 0 50 100 JUNCTION TEMPERATURE T j ( C) Revision No : 4 150 REVERSE DRAIN CURRENT I S (A) COMMON SOURCE VDS=VGS ID =250µA -50 3 4 5 I S - V SD V th - T j 1.4 2 GATE-SOURCE VOLTAGE VGS (V) JUNCTION TEMPERATURE T j ( C) NORMALIZED GATE SOURCE THRESHOLD VOLTAGE Vth (V) 0.6 0.9 4 2009. 11. 17 0.5 ID - VGS R DS(ON) - T j 0.6 -100 0.4 DRAIN CURRENT I D (A) 5 0 -100 5V 1 DRAIN-SOURCE VOLTAGE V DS (V) 2 6V 1 VGS =0 VGS =10 0.1 0.01 0.0 0.3 0.6 0.9 1.2 1.5 BODY DIODE FORWARD VOLTAGE VSD (V) 3/4 2N7002 C - V DS COMMON SOURCE VGS=0 f=1MHz Ta=25 C Ciss 100 Coss 10 Crss 1 0 5 10 15 20 GATE-SOURCE VOLTAGE VGS (V) CAPACITANCE C (pF) 1000 VGS - Q g 10 COMMON SOURCE VGS=30V ID= 0.3A Ta =25 C 8 6 4 2 0 25 0 2 DRAIN-SOURCE VOLTAGE V DS (V) 4 DRAIN POWER DISSIPATION P D (mW) DRAIN CURRENT I D (A) Tj=150 C , Ta=25 C ,Single Pulse,Package mounted 1 on a a glass epoxy PCB(100mm2 1mm) PW 10 0.1 PW =1ms PW =10ms PW =100ms DC 0.001 0.01 0.1 1 10 DRAIN-SOURCE VOLTAGE V DS (V) 2009. 11. 17 10 P D - Ta 10 0.0001 0.001 8 GATE CHARGE Q g (nC) SOA 0.01 6 Revision No : 4 100 350 300 250 200 150 100 50 0 0 20 40 60 80 100 120 140 160 AMBIENT TEMPERATURE Ta ( C) 4/4