SEMICONDUCTOR 2N7002KA TECHNICAL DATA N Channel MOSFET ESD Protected 2000V INTERFACE AND SWITCHING APPLICATION. FEATURES ・ESD Protected 2000V. E B L L ・High density cell design for low RDS(ON). D ・Voltage controlled small signal switch. 2 A G ・Rugged and reliable. 3 H ・High saturation current capablity. 1 CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±20 V ID 300 IDP 1200 Drain Power Dissipation (Note 2) PD 350 mW Junction Temperature Tj 150 ℃ Tstg -55～150 ℃ Continuous Drain Current Pulsed (Note 1) Storage Temperature Range J K C MAXIMUM RATING (Ta=25℃) P N P DIM A MILLIMETERS _ 0.20 2.93+ B C 1.30+0.20/-0.15 1.30 MAX D 0.45+0.15/-0.05 E G 2.40+0.30/-0.20 1.90 H J K L M N P 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 M 1. SOURCE 2. GATE 3. DRAIN mA SOT-23 Note 1) Pulse Width≤10㎲, Duty Cycle≤1% Note 2) Package mounted on 99% Alumina 10×8×0.6mm EQUIVALENT CIRCUIT D Marking Lot No. 2P Type Name G S ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=10μA 60 - - V Zero Gate Voltage Drain Current IDSS VDS=60V, VGS=0V - - 1 μA Gate-Body Leakage, Forward IGSSF VGS=20V, VDS=0V - - 10 μA Gate-Body Leakage, Reverse IGSSR VGS=-20V, VDS=0V - - -10 μA 2000 - - V ESD-Capability* - C=100pF, R=1.5KΩ Both forward and reverse direction 3 pulse *Failure cirterion : IDSS > 1μA at VDS=60V, IGSSF>10μA at VGS=20V, IGSSR>-10μ A at VGS=-20V. 2011. 4. 4 Revision No : 1 1/3 2N7002KA ELECTRICAL CHARACTERISTICS (Ta=25℃) ON CHARACTERISTICS (Note 3) CHARACTERISTIC SYMBOL Vth Gate Threshold Voltage RDS(ON) Drain-Source ON Resistance VSD Drain-Source Diode Forward Voltage TEST CONDITION MIN. TYP. MAX. UNIT VDS=VGS, ID=250μA 1.1 - 2.35 V VGS=10V, ID=500mA - - 2.3 VGS=5V, ID=50mA - 1.7 2.7 VGS=0V, IS=200mA (Note 1) - - 1.15 V MIN. TYP. MAX. UNIT - 18.0 - - 3.0 - - 7.0 - Ω Note 3) Pulse Test : Pulse Width≤80㎲, Duty Cycle≤1% DYNAMIC CHARACTERISTICS CHARACTERISTIC SYMBOL Input Capacitance Ciss Reverse Transfer Capacitance Crss Output Capacitance Coss TEST CONDITION VDS=25V, VGS=0V, f=1㎒ Turn-On Time ton VDD=30V, RL=155Ω, ID=190㎃, - 15 - Turn-Off Time toff VGS=10V - 40 - Switching Time pF nS SWITCHING TIME TEST CIRCUIT ton td(on) VDD td(off) tr 90% toff tf 90% RL VIN VOUT D OUTPUT VOUT 10% VGS INVERTED G 90% 50% 50% S INPUT VIN 10% PULSE WIDTH 2011. 4. 4 Revision No : 1 2/3 2N7002KA I D - V DS V 10 DRAIN CURRENT ID (A) COMMON SOURCE 7V 6V DRAIN SOURCE ON- RESISTANCER RDS(ON) (Ω) 1.5 R DS(ON) - I D 5V Ta=25 C 1.2 4V 0.9 0.6 VGS =3V 0.3 0 0 1 2 3 4 5 6 5 VGS=3V 4 3 5V 4V 2 10V 1 COMMON SOURCE Ta=25 C 0 0.1 0.2 DRAIN-SOURCE VOLTAGE V DS (V) 0.3 1.0 0.5 0 0.6 50 100 150 1000 CAPACITANCE C (pF) NORMALIZED GATE SOURCE THRESHOLD VOLTAGE Vth (V) 1.5 0.0 -50 0.5 C - V DS COMMON SOURCE VDS=VGS ID =250µA 2.0 0.4 DRAIN CURRENT I D (A) V th - T j 2.5 6V 7V 100 Ciss Coss 10 Crss 1 0.0 0.3 0.6 0.9 1.2 1.5 DRAIN-SOURCE VOLTAGE V DS (V) JUNCTION TEMPERATURE T j ( C) DRAIN POWER DISSIPATION PD (mW) PD - Ta 500 400 300 200 100 0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE Ta ( C) 2011. 4. 4 Revision No : 1 3/3