TYSEMI 2SD2198

Transistors
IC
SMD Type
Product specification
2SD2198
TO-263
Unit: mm
1 .2 7 -0+ 0.1.1
Features
5 .6 0
+0.2
4.57-0.2
0.1max
5 .2 8 -0+ 0.2.2
+0.1
1.27-0.1
+0.1
0.81-0.1
2.54
2.54
+0.2
-0.2
1 5 .2 5 -0+ 0.2.2
8 .7 -0+ 0.2.2
Low collector-to-emitter saturation voltage.
+0.1
1.27-0.1
2 .5 4 -0+ 0.2.2
Surface mount type device making the following possible.
+0.1
5.08-0.1
+0.2
0.4-0.2
1 : Base
2 : Collector
3 : Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
6
V
Collector current
IC
5
A
Collector current (pulse)
ICP
9
A
1.65
W
30
W
Collector dissipation
PC
TC = 25
Jumction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
http://www.twtysemi.com
[email protected]
4008-318-123
1 of 2
Transistors
IC
SMD Type
Product specification
2SD2198
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector cutoff current
IcBO
VCB = 40V , IE = 0
0.1
mA
Emitter cutoff current
IEBO
VEB = 4V , IC = 0
0.1
mA
DC current Gain
hFE
Gain bandwidth product
fT
Output capacitance
Cob
VCE = 2V , IC = 1A
70
VCE = 2V , IC = 3A
30
280
VCE = 5V , IC = 1A
30
MHz
VCB = 10V , f = 1MHz
100
pF
VCE(sat) IC = 3A , IB = 0.3A
Collector-emitter saturation voltage
0.4
V
Collector-to-base breakdown voltage
V(BR)CBO IC = 1mA , IE = 0
60
V
Collector-to-emitter breakdown voltage
V(BR)CEO IC = 1mA , RBE =
50
V
Emitter-base breakdown voltage
V(BR)EBO IE = 1mA , IC = 0
6
V
Turn-on time
ton
0.1
ìs
Storage time
tstg
1.4
ìs
tf
0.2
ìs
Fall time
hFE Classification
Rank
Q
R
hFE
70 140
100 200
http://www.twtysemi.com
S
140
280
[email protected]
4008-318-123
2 of 2