TYSEMI 2SC4666

Transistors
IC
SMD Type
Product specification
2SC4666
Features
High hFE: hFE = 600 3600
High voltage: VCEO = 50 V
High collector current: IC = 150 mA (max)
Small package
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
IC
150
mA
Collector current
Base current
IB
30
mA
Collector power dissipation
PC
100
mW
Junction temperature
Tj
125
Storage temperature
Tstg
-55 to +125
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector cut-off current
ICBO
VCB = 50 V, IE = 0
0.1
ìA
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
0.1
ìA
DC current gain
hFE
VCE = 6 V, IC = 2 mA
Collector-emitter saturation voltage
600
VCE (sat) IC = 100 mA, IB = 10 mA
Transition frequency
fT
Collector output capacitance
3600
0.12
V
MHz
VCB = 10 V, IE = 0, f = 1 MHz
3.5
pF
NF(1)
VCE = 6 V, IC = 0.1 mA, f = 100 Hz,Rg =
10 kÙ
0.5
dB
NF(2)
VCE = 6 V, IC = 0.1 mA, f = 1 kHz,Rg =
10 kÙ
0.3
dB
Noise figure
100
0.25
250
Cob
VCE = 10 V, IC = 10 mA
hFE Classification
P
Marking
Rank
A
B
hFE
600 1800
1200 3600
http://www.twtysemi.com
[email protected]
4008-318-123
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