Transistors IC SMD Type Product specification 2SD1815 TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 0.127 max +0.15 5.55 -0.15 +0.1 0.80-0.1 +0.25 2.65 -0.1 Fast switching time. +0.28 1.50 -0.1 +0.2 9.70 -0.2 High fT. +0.15 0.50 -0.15 Excllent linearity of hFE. 3 .8 0 Low collector-to-emitter saturation voltage. +0.15 4.60-0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 120 V Collector-emitter voltage VCEO 100 V Emitter-base voltage VEBO 6 V Collector current IC 3 A Collector current (pulse) ICP 6 A Collector dissipation PC 1 W Jumction temperature Tj 150 Storage temperature Tstg -55 to +150 http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Transistors IC SMD Type Product specification 2SD1815 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cutoff current ICBO VCB = 100V , IE = 0 1 ìA Emitter cutoff current IEBO VEB = 4V , IC = 0 1 ìA DC current Gain hFE Gain bandwidth product VCE = 5V , IC = 0.5A 70 VCE = 5V , IC = 2A 40 400 fT VCE = 10V , IC = 0.5A 180 MHz Cob VCB = 10V , f = 1MHz 25 pF Collector-emitter saturation voltage VCE(sat) IC = 1.5A , IB = 0.15A 150 400 mV Base-to-emitter saturation voltage VBE(sat) IC = 1.5A , IB = 0.15A 0.9 1.2 V Output capacitance Collector-to-base breakdown voltage V(BR)CBO IC = 10ìA , IE = 0 120 V Collector-to-emitter breakdown voltage V(BR)CEO IC = 1mA , RBE = 100 V 6 V Emitter-to-base breakdown voltage V(BR)EBO IE = 10ìA , IC = 0 Turn-on time ton 100 ns Storage time tstg 900 ns tf 50 ns Fall time hFE Classification Rank Q R S T hFE 70 140 100 200 140 280 200 400 http://www.twtysemi.com [email protected] 4008-318-123 2 of 2