TYSEMI 2SB1205

Product specification
2SB1205
TO-252
Features
6.50
+0.2
5.30-0.2
Low saturation voltage.
+0.15
1.50 -0.15
+0.15
-0.15
Unit: mm
2.30
+0.1
-0.1
+0.8
0.50-0.7
+0.1
0.60-0.1
2.3
0.127
max
3 .8 0
+0.25
2.65 -0.1
+0.1
0.80-0.1
+0.28
1.50 -0.1
+0.15
0.50 -0.15
+0.2
9.70 -0.2
Large current capacity.
+0.15
5.55 -0.15
Fast switching speed.
+0.15
4.60-0.15
1 Base
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-base voltage
Parameter
VCBO
-25
V
Collector-emitter voltage
VCEO
-20
V
Emitter-base voltage
VEBO
-5
V
Collector current
IC
-5
A
Collector current (pulse)
ICP
-8
A
Base current
IB
-0.5
A
1
W
10
W
Collector dissipation
PC
TC = 25
Jumction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
http://www.twtysemi.com
[email protected]
4008-318-123
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Product specification
2SB1205
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector cutoff current
ICBO
VCB = -20V , IE = 0
-500
ìA
Emitter cutoff current
IEBO
VEB = -4V , IC = 0
-500
ìA
DC current Gain
hFE
Gain bandwidth product
fT
Output capacitance
Cob
VCE = -2V , IC = -500mA
100
VCE = -2V , IC = -4A
60
400
VCE = -5V , IC = -200mA
320
MHz
VCB = -10V , f = 1MHz
60
pF
Collector-emitter saturation voltage
VCE(sat) IC = -3A , IB = -60mA
-250
-500
mV
Base-to-emitter saturation voltage
VBE(sat) IC = -3A , IB = -60mA
-1
-1.3
V
Collector-to-base breakdown voltage
V(BR)CBO IC = -10ìA , IE = 0
-25
V
Collector-to-emitter breakdown voltage
V(BR)CEO IC = -1mA , RBE =
-20
V
IE = -10ìA , IC = 0
-5
V
Emitter-to-base breakdown voltage
V(BR)EBO
Turn-on time
ton
40
ns
Storage time
tstg
200
ns
tf
10
ns
Fall time
hFE Classification
Rank
R
S
T
hFE
100 200
140 280
200 400
http://www.twtysemi.com
[email protected]
4008-318-123
2 of 2