Product specification AP2305BGN-HF ▼ Simple Drive Requirement ▼ Small Package Outline D ▼ Surface Mount Device ▼ RoHS Compliant BVDSS -20V RDS(ON) 65mΩ ID -4.2A S SOT-23 Description G D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. G The SOT-23 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. S Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25℃ ID@TA=70℃ Rating Units - 20 V + 12 V 3 -4.2 A 3 -3.4 A Continuous Drain Current , @VGS=-4.5V Continuous Drain Current , @VGS=-4.5V 1 IDM Pulsed Drain Current -10 A PD@TA=25℃ Total Power Dissipation 1.38 W Linear Derating Factor 0.01 W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-amb Parameter Maximum Thermal Resistance, Junction-ambient http://www.twtysemi.com [email protected] 3 Value Unit 90 ℃/W 4008-318-123 1 of 2 Product specification AP2305BGN-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Test Conditions Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Min. Typ. Max. Units VGS=0V, ID=-250uA -20 - - V VGS=-10V, ID=-4.5A - - 53 mΩ VGS=-4.5V, ID=-4.2A - - 65 mΩ VGS=-2.5V, ID=-2.0A - - 100 mΩ -0.5 - -1.16 V VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA gfs Forward Transconductance VDS=-5V, ID=-4A - 14 - S IDSS Drain-Source Leakage Current VDS=-20V, VGS=0V - - -1 uA Drain-Source Leakage Current (Tj=55 C) VDS=-16V, VGS=0V - - -10 uA Gate-Source Leakage VGS= +12V, VDS=0V - - +100 nA ID=-4A - 13 21 nC o IGSS 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=-16V - 1.4 - nC Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 4 - nC VDS=-10V - 8 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=-1A - 17 - ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=-5V - 24 - ns tf Fall Time RD=10Ω - 33 - ns Ciss Input Capacitance VGS=0V - 920 1470 pF Coss Output Capacitance VDS=-20V - 90 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 85 - pF Rg Gate Resistance f=1.0MHz - 4.5 6.8 Ω Min. Typ. IS=-1.2A, VGS=0V - - -1.2 V Source-Drain Diode Symbol VSD Parameter Test Conditions 2 Forward On Voltage 2 Max. Units trr Reverse Recovery Time IS=-4A, VGS=0V, - 27 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 14 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board ; 270℃/W when mounted on min. copper pad. http://www.twtysemi.com [email protected] 4008-318-123 2 of 2