IC IC MOSFET SMD Type Product specification KRF7607 Features Generation V Technology Ultra Low On-Resistance N-Channel MOSFET Very Small SOIC Package Low Profile ( 1.1mm) Available in Tape & Reel Fast Switching Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating ID 20 Continuous Drain Current, VGS @ 4.5V,TA = 70 ID 6.5 Pulsed Drain Current*1 IDM 5.2 Continuous Drain Current, VGS @ 4.5V,Ta = 25 Power Dissipation Ta = 25 PD Linear Derating Factor Gate-to-Source Voltage VGS Junction and Storage Temperature Range Junction-to-Ambient * http://www.twtysemi.com A W 1.2 Power Dissipation Ta = 70 * Surface mounted on FR-4 board, t 1.8 Unit 0.014 W/ 12 V TJ, TSTG -55 to + 150 R JA 70 /W 10sec. [email protected] 4008-318-123 1of 2 IC IC MOSFET SMD Type Product specification KRF7607 Electrical Characteristics Ta = 25 Parameter Symbol Drain-to-Source Breakdown Voltage Testconditons V(BR)DSS Breakdown Voltage Temp. Coefficient V(BR)DSS/ Static Drain-to-Source On-Resistance RDS(on) Gate Threshold Voltage Forward Transconductance Gate-to-Source Forward Leakage Typ Max 20 V 0.016 ID = 1mA,Reference to 25 V/ VGS = 4.5V, ID = 6.5A*1 0.030 VGS = 2.5V, ID =5.2A*1 0.045 VDS = VGS, ID = 250 A 0.60 V gfs VDS = 10V, ID = 6.5A*1 13 S IGSS Gate-to-Source Reverse Leakage VDS = 16V, VGS = 0V 1.0 VDS = 16V, VGS = 0V, TJ = 70 25 VGS = -12V -100 VGS = 12V 100 Total Gate Charge Qg ID = 6.5A 15 22 Gate-to-Source Charge Qgs VDS = 10V 2.2 3.3 Gate-to-Drain ("Miller") Charge Qgd VGS = 5.0V,*1 3.5 5.3 Turn-On Delay Time td(on) VDD = 10V 8.5 Rise Time Turn-Off Delay Time Fall Time tr ID = 1.0A 11 td(off) RG =6.0 36 tf RD = 10 16 Input Capacitance Ciss VGS = 0V 1310 Output Capacitance Coss VDS = 15V 150 Reverse Transfer Capacitance Crss ƒ= 1.0MHz 36 Continuous Source Current Body Diode) Unit VGS(th) IDSS Drain-to-Source Leakage Current VGS = 0V, ID = 250 A TJ Min A nA nC ns pF IS 1.8 ISM 50 A Pulsed Source Current Body Diode) *2 Diode Forward Voltage VSD 1.2 V Reverse Recovery Time trr TJ = 25 , IF = 1.7A.VR=10V 19 29 ns Reverse RecoveryCharge Qrr di/dt = 100A/ 13 20 nC *1 Pulse width 300 s; duty cycle TJ = 25 , IS = 1.7A, VGS = 0V*1 s*1 2%. *2 Repetitive rating; pulse width limited bymax http://www.twtysemi.com [email protected] 4008-318-123 2of 2