WEITRON WTK6679

WTK6679
Surface Mount P-Channel
Enhancement Mode MOSFET
7
-14 AMPERES
6
D
3
DRAIN CURRENT
D
S
8
S
2
D
S
1
P b Lead(Pb)-Free
DRAIN SOURCE VOLTAGE
5
D
4
G
Features:
* Super high dense
* Cell design for low RDS(ON)
* RDS(ON)<10mΩ@VGS = -10V
* RDS(ON)<13mΩ@VGS = -4.5V
* Simple Drive Requirement
* Lower On-resistance
* Fast Switching
-30 VOLTAGE
1
SOP-8
Description:
The WTK6679 provide the designer with the best combination
of fast switching, ruggedized device design, low on-resistance
and cost-effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
Maximum Ratings (TA=25˚C Unless Otherwise Specified)
Rating
Symbol
Value
Unite
Drain-Source Voltage
VDS
-30
V
Gate-Source Voltage
VGS
±25
V
ID
-14
-8.9
A
IDM
-50
A
PD
2.5
W
R θJA
50
°C/W
TJ
+150
°C
Tstg
-55 to +150
°C
Continuous Drain Current
(TA =25°C)
(TA =70°C)
Pulsed Drain Current (1)
Power Dissipation
(TA =25°C)
Maximax Junction-to-Ambient
Operating Junction Temperature Range
Storage Temperature Range
Device Marking
WTK6679=6679SC
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WTK6679
Electrical Characteristics
(TA =25°C U nless otherwise noted)
Symbol
Min
Typ
Max
Unit
V(BR)DSS
-30
-
-
V
VGS (th)
-1.0
-
-3.0
V
Gate-Source Leakage Current
+25V
VDS=0V, VGS=-
IGSS
-
-
±100
nA
Zero Gate Voltage Drain Current
VDS=-30V, VGS=0V
VDS=-24V, VGS=0V
IDSS
-
-
-1
-25
μA
Drain-Source On-Resistance
VGS=-10V, ID=-14A
VGS=-4.5V, ID=-11A
R DS (on)
-
-
10
13
mΩ
Forward Transconductance
VDS=-10V , ID=-14A
gfs
-
26
-
S
Ciss
-
2860
4580
Coss
-
950
-
Crss
-
640
-
Turn-On Delay Time(2)
VDS = -15V, ID = -1A, VGS = -10V, RG = 3.3Ω, RD = 15Ω
td(on)
-
13
-
nS
Rise Time
VDS = -15V, ID = -1A, VGS = -10V, RG = 3.3Ω, RD = 15Ω
tr
-
11
-
nS
-
58
-
nS
Characteristic
Static
Drain-Source Breakdown Voltage
VGS=0V, ID=-250 μA
Gate-Source Threshold Voltage
VDS=VGS, ID=-250 μA
Dynamic
Input Capacitance
VDS=-25V, VGS=0V, f=1MHZ
Output Capacitance
VDS=-25V, VGS=0V, f=1MHZ
Reverse Transfer Capacitance
VDS=-25V, VGS=0V, f=1MHZ
PF
Switching
Turn-O Time
VDS = -15V, ID = -1A, VGS = -10V, RG = 3.3Ω, RD = 15Ω
t
)
Fall Time
VDS = -15V, ID = -1A, VGS = -10V, RG = 3.3Ω, RD = 15Ω
tf
-
43
-
nS
Total Gate Charge(2)
VDS=-24V, ID=-14A, V GS =-4.5V
Qg
-
37
60
nc
Gate-Source Charge
VDS=-24V, ID=-14A, V GS =-4.5V
Qgs
-
3
-
nc
Gate-Drain Charge
VDS=-24V, ID=-14A, V GS =-4.5V
Qgd
-
25
-
nc
Forward On Voltage (2)
VGS=0V, IS=-2A
VSD
-
-
-1.2
V
Reverse Recovery Time (2)
VGS=0V, IS=-14A,dl/dt=100A/μs
Trr
-
48
-
nS
Reverse Recovery Charge
VGS=0V, IS=-14A,dl/dt=100A/μs
Q rr
-
46
-
nC
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width ≤ 300us, duty cycle ≤ 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 125°C/W when mounted on Min. copper pad.
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03-May-07
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WTK6679
Characteristics Curve
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WTK6679
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WTK6679
SOP-8 Package Outline Dimensions
Unit:mm
1
θ
L
E1
D
7(4X)
e
B
A1
2A
A
C
7 (4X)
eB
SYMBOLS
A
A1
B
C
D
E1
eB
e
L
θ
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MILLIMETERS
MAX
MIN
1.75
1.35
0.20
0.10
0.45
0.35
0.18
0.23
4.69
4.98
3.56
4.06
5.70
6.30
1.27 BSC
0.60
0.80
0˚
8˚
5/5
03-May-07