TYSEMI BAS70

Product specification
BAS70 series
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
+0.1
1.3-0.1
+0.1
2.4-0.1
Features
0.4
3
1
High breakdown voltage
0.55
Low forward current
2
+0.1
0.95-0.1
+0.1
1.9-0.1
Guard ring protected
+0.05
0.1-0.01
+0.1
0.97-0.1
Small plastic SMD package
0-0.1
+0.1
0.38-0.1
Low diode capacitance.
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Continuous reverse voltage
Conditions
Min
VR
Continuous forward current
Max
Unit
70
V
IF
70
mA
Repetitive peak forward current
IFRM
70
mA
Non-repetitive peak forward current
IFSM
100
mA
Storage temperature
Tstg
Junction temperature
Tj
Operating ambient temperature
Tamb
thermal resistance from junction to ambient
Rth j-a
tp
1 s; ä
0.5
tp < 10 ms
-65
+150
150
-65
+150
500
K/W
Electrical C haracteristics T a = 25
P aram eter
S ym bol
Forward voltage
VF
Reverse voltage leakage current
IR
Charge carrier life tim e (K rakauer m ethod)
Diode capacitance
Cd
Conditions
M ax
Unit
IF = 1 m A
410
mV
I F = 10 m A
750
mV
I F = 15 m A
1
V
V R = 50 V ; note 1
100
nA
V R = 70 V ; note 1
10
IF = 5 m A
100
A
ps
f = 1 M Hz; V R = 0;
2
pF
Note
1. P ulse test: t p = 300
s; ä = 0.02
Marking
Type
BAS70
BAS70-04
BAS70-05
BAS70-06
BAS70-07
Marking
73*
74*
75*
76*
77p
http://www.twtysemi.com
[email protected]
4008-318-123
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