RoHS ISS245 D T ,. L High-voltage switching diode Features 1. Small surface mounting type 2. High reliability 3. VRM=250V IC Applications High voltage switch and general purpose rectification Construction R T Silicon epitaxial planar Absolute Maximum Ratings O C E L Tj=25℃ Parameter N Symbol Value Unit VRM 250 V VR 220 V ISurge 1 A Mean rectifying current IO 200 mA Peak forward current IFM 625 mA P 300 mW Tj 175 ℃ Tstg -65~+175 ℃ Peak reverse voltage DC reverse voltage Surge current J E E Power dissipation Test Conditions C O Type tp=1s Junction temperature Storage temperature range W Maximum Thermal Resistance Tj=25℃ Parameter Junction ambient Test Conditions Symbol Value Unit on PC board 50mm×50mm×1.6mm RthJA 500 K/W WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected] RoHS ISS245 Surge current: Isurge(A) D T ,. L Pulse width: Tw (ms) C O Figure 6. Reverse recovery time (trr) measurement circuit Figure 5. Surge current characteristics Dimensions in mm O IC N Cathode identification 1.8±0.2 R T Cathode C E L 29±1 J E 2.7±0.3 0.4±0.1 Anode 29±1 E Standard Glass Case JEDEC DO 34 W WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected] RoHS ISS245 Electrical Characteristics D T ,. L Tj=25℃ Parameter Test Conditions Type Symbol Min Typ Max Unit Forward voltage IF=200mA VF 1.13 1.5 V Reverse current VR=220V IR 0.05 10 uA Diode capacitance VR=0, f=1MHz CD 3 pF Reverse recovery time IF= IR=20mA, RL=50Ω trr 75 ns Reverse current: IR(nA) Forward current: IF(mA) Characteristics (Ta=25℃ unless specified otherwise) C E L Capacitance between terminals: CT(pF) Figure 1. Forward characteristics J E W E N Figure 2. Reverse characteristics Reverse voltage: VR (V) Forward current: IF (mA) Figure 3. Capacitance between terminals characteristics WEJ ELECTRONIC CO. Reverse voltage: VR (V) Reverse recovery time: trr(ns) R T Forward voltage: VF (V) O IC C O Http:// www.wej.cn Figure 4. Reverse recovery time characteristics E-mail:[email protected]