RoHS 1SS265 D T ,. L Band switching diode Features 1. Low differential forward resistance 2. Low diode capacitance 3. High reverse impedance Applications IC Band switching in VHF-tuners Construction Silicon epitaxial planar Absolute Maximum Ratings R T Tj=25℃ Parameter DC Reverse voltage O N Test Conditions C E L Average rectified current Power dissipation Junction temperature Storage temperature range E C O Symbol Value Unit VR 35 V IO 100 mA Pd 150 MW Tj 150 ℃ Tstg -55…+150 ℃ Maximum Thermal Resistance J E Tj=25℃ Parameter Junction ambient Test Conditions I=4mm, TL=constant Symbol Value Unit RthJA 350 K/W W WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected] RoHS 1SS265 Electrical Characteristics D T ,. L Tj=25℃ Parameter Test Conditions Symbol Min Typ Max 0.85 1 Forward voltage IF=10mA VF Reverse current VR=20V IR Breakdown voltage IR=10µA BV Terminal capacitance f=1MHZ, VR=6V Ct 1.5 Frequency resistance f=100MHZ, IF=10mA rf 0.6 R T C E L 29±1 nA 35 V IC Cathode identification 1.8±0.2 V 100 Dimensions in mm Cathode Unit O C N 2.7±0.3 pF O Anode 0.4±0.1 29±1 Standard Glass Case JEDEC DO 34 J E E W WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]