DATA SHEET UF2A~UF2M SEMICONDUCTOR SURFACE MOUNT REVERSE VOLTAGE - 50 to 1000 Volts ULT RA FAST RECTI FIERS FORWARD CURRENT - 2.0 Ampere FEATURES • Glass passivated chip • Ultra fast switching for high efficiency SMB/DO-214AA Unit:inch(mm) • For surface mounted applications • Low forward voltage drop and high current capability .083(2.11) .075(1.91) • Low reverse leakage current • Plastic material has UL flammability classification 94V-0 .155(3.94) .130(3.30) • High temperature soldering : 260OC / 10 seconds at terminals • Pb free product at available : 99% Sn above meet RoHS environment .185(4.70) .160(4.06) substance directive request .012(.305) .006(.152) MECHANICAL DATA • Case : Molded plastic • Polarity : Indicated by cathode band .096(2.44) .083(2.13) • Weight : 0.003 ounces, 0.093 grams .012(.31) .006(.15) .050(1.27) .030(0.76) .008(.203) .002(.051) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS .220(5.59) .200(5.08) Ratings at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20% SYMBOL UF2A UF2B UF2D UF2G UF2J UF2K UF2M Maximum Recurrent Peak Reverse Voltage CHARACTERISTICS VRRM 50 100 200 400 600 800 1000 V Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 V VDC 50 100 200 400 600 800 1000 V Maximum DC Blocking Voltage Maximum Average Forward Rectified Current @TL =75 °C UNIT I(AV) 2.0 A IFSM 50 A Peak For ward Surge Current 8.3ms single ha lf sine- wave super imposed on rated l oad (JEDEC METHOD) Maxi mum f orward Voltage at 1.0A DC VF Maxi mum DC Reverse Cur rent @TJ =25 °C at Rated DC Blocking Voltage @TJ =100°C Maximum Reverse Recovery Time (Note 1) Typi cal Junction Capacitance (Note 2) Typical Thermal Resistance (Note 3 ) Operati ng Temperature Range Storage Temperature Range 1.0 1.3 1.5 1.7 5 IR V uA 100 TRR 50 75 ns CJ 20 10 pF RθJL 30 TJ -55 to +150 TSTG -55 to +150 NOTES : 1.Reverse Recovery Test Conditions :IF=0.5A,IR=1.0A,IRR=0.25A. 2.Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 3.Thermal Resistance junction to Lead. http://www.yeashin.com 1 REV.02 20110725 RATING AND CHARACTERISTIC CURVES NSTANTANEOUS FORWARD CURRENT, AMPERES AVERAGE FORWARD RECTIFIED CURRENT, AMPERES UF2A~UF2M 2.4 2.0 1.6 SINGLE PHASE HALF 1.2 WAVE 60Hz RESISTIVE OR INDUCTIVE LOAD 0.8 P.C.B. MOUNTED ON 0.3×0.3"(8.0×8.0mm) 0.4 COPPER PAD AREAS 0 0 20 40 60 80 100 120 140 160 LEAD TEMPERATURE, 10 TJ = 25 °C PULSE WIDTH = 300us 2% DUTY CYCLE 1.0 UF2A UF2G 0.1 UF2K .01 0 .4 .6 8 1.0 1.2 1.4 INSTANTANEOUS FORWARD VOLTAGE, VOLTS Fig. 1-DERATING CURVE FOR OUTPUT RECTIFIED CURRENT Fig. 2-TYPICAL FORWARD CHARACTERISTICS PER ELEMENT INSTANTANEOUS REVERSE CURRENT MICROAMPERES PEAK FORWARD SURGE CURRENT, AMPERES 10 30 25 8.3ms SINGLE HALF SINE WAVE JEDEC METHOD 20 15 10 5 1.0 TJ = 25 °C 0.1 .01 1 2 5 10 20 50 100 0 20 40 60 80 100 120 NUMBER OF CYCLES AT 60Hz PERCENT OF RATED PEAK REVERSE VOLTAGE Fig. 3-MAXIMUM FORWARD SURGE CURRENT Fig. 4-TYPICAL REVERSE CHARACTERISTICS trr 100 CAPACITANCE, pF 140 +0.5A 0 -0.25 10 5 1.0 10 100 REVERSE VOLTAGE, VOLTS Fig. 5-TYPICAL JUNCTION CAPACITANCE PER BRIDGE ELEMENT http://www.yeashin.com NOTE:1.Rise Time = 7ns max. Input Impedance = 1 megohm. 22pF 2.Rise Time = 10ns max. Source Impedance = 50 Ohms -1.0 SET TIME BASE FOR 50 ns/cm 1cm Fig. 6-REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 2 REV.02 20110725