ETC CEM4410B

CEM4410B
Dec. 2002
N-Channel Enhancement Mode Field Effect Transistor
5
FEATURES
30V , 12.5A , RDS(ON)=9.5m Ω @VGS=10V.
RDS(ON)=14m Ω @VGS=4.5V.
Super high dense cell design for extremely low RDS(ON).
D
D
D
D
8
7
6
5
High power and current handing capability.
Surface mount Package.
SO-8
1
2
3
4
S
S
S
G
1
ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted)
Symbol
Limit
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
Ć20
V
ID
Ć12.5
A
IDM
Ć50
A
IS
2.3
A
PD
2.5
W
TJ, TSTG
-55 to 150
C
RįJA
50
C/W
Parameter
Drain Current-Continuous
-Pulsed
a
Drain-Source Diode Forward Current
Maximum Power Dissipation
a
a
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient
a
5-2
CEM4410B
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted)
Parameter
Condition
Symbol
Min Typ C Max Unit
5
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 250µA
Zero Gate Voltage Drain Current
IDSS
VDS = 30V, VGS = 0V
1
µA
Gate-Body Leakage
IGSS
VGS =Ć20V, VDS = 0V
Ć100
nA
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250µA
3
V
Drain-Source On-State Resistance
RDS(ON)
30
V
ON CHARACTERISTICS b
ID(ON)
gFS
On-State Drain Current
Forward Transconductance
1
VGS = 10V, ID = 10A
7.5
9.5
mΩ
VGS = 4.5V, ID =5A
11
14
mΩ
VDS = 5V, VGS = 10V
VDS = 15V, ID = 10A
A
25
18
S
2237
PF
1228
PF
320
PF
c
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
VDS =10V, VGS = 0V
f =1.0MHZ
c
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
tD(ON)
tr
tD(OFF)
VDD = 10V,
ID = 1A,
VGS = 10V,
RGEN = 6Ω
33
65
ns
60
108
ns
65
117
ns
Fall Time
tf
50
90
ns
Total Gate Charge
Qg
57
68
nC
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS =15V, ID = 10A,
VGS =10V
5-3
9
nC
16
nC
CEM4410B
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted)
Parameter
DRAIN-SOURCE DIODE CHARACTERISTICS b
Diode Forward Voltage
VGS = 0V, Is = 2.3A
VSD
0.75
1.2
Notes
a.Surface Mounted on FR4 Board, t ś10sec.
b.Pulse Test:Pulse Width ś300ijs, Duty Cycle ś 2%.
c.Guaranteed by design, not subject to production testing.
30
50
VGS=10,8,6,5,4V
40
ID, Drain Current (A)
ID, Drain Current (A)
25
20
15
VGS=3V
10
5
0
30
20
25 C
-55 C
10
Tj=125 C
0
0.5
0
1.0
1.5
1
2.0
4
3
2
VDS, Drain-to-Source Voltage (V)
VGS, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
1.80
3000
1.60
2500
C, Capacitance (pF)
5
Min Typ C Max Unit
Condition
Symbol
ID=10A
VGS=10V
Ciss
1.40
2000
1.20
1500
Coss
1.00
1000
0.80
500
Crss
0.60
-50 -25
0
0
5
10
15
20
25
30
0
25
50
75
100 125 150
TJ, Junction Temperature( C)
VDS, Drain-to Source Voltage (V)
Figure 4. On-Resistance Variation with
Temperature
Figure 3. Capacitance
5-4
V
1.30
BVDSS, Normalized
Drain-Source Breakdown Voltage
Vth, Normalized
Gate-Source Threshold Voltage
CEM4410B
VDS=VGS
ID=250ijA
1.20
1.10
1.00
0.90
0.80
0.70
0.60
-50 -25
0
25 50
75 100 125 150
1.15
ID=250ijA
1.10
1.05
1.00
5
0.95
0.90
0.85
-50 -25
50
75 100 125 150
Figure 6. Breakdown Voltage Variation
with Temperature
Figure 5. Gate Threshold Variation
with Temperature
25
50
20
Is, Source-drain current (A)
gFS, Transconductance (S)
25
Tj, Junction Temperature ( C)
Tj, Junction Temperature ( C)
15
10
5
VDS=15V
0
5
10
15
10
1
0.1
0
0.4
20
IDS, Drain-Source Current (A)
0.6
0.8
1.0
1.2
1.4
VSD, Body Diode Forward Voltage (V)
Figure 7. Transconductance Variation
with Drain Current
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
2
10
VDS=15V
ID=10A
30
45
60
Qg, Total Gate Charge (nC)
s
15
0m
-1
10
10
0
1s
10 0
-2
0
s
s
2
S(
10
4
RD
)
ON
it
m
6
10
Lim
C
ID, Drain Current (A)
1m
1
10
8
D
VGS, Gate to Source Voltage (V)
0
TA=25 C
Tj=150 C
Single Pulse
10 -2
10 -1
10 0
10
1
VDS, Drain-Source Voltage (V)
Figure 10. Maximum Safe
Operating Area
Figure 9. Gate Charge
5-5
10
2
CEM4410B
VDD
t on
5
V IN
D
td(off)
tf
90%
90%
VOUT
VOUT
VGS
RGEN
toff
tr
td(on)
RL
10%
INVERTED
10%
G
90%
S
VIN
50%
50%
10%
PULSE WIDTH
Figure 12. Switching Waveforms
Figure 11. Switching Test Circuit
0
r(t),Normalized Effective
Transient Thermal Impedance
10
D=0.5
0.2
10
-1
0.1
0.05
PDM
0.02
10
t1
0.01
-2
t2
1. RįJA (t)=r (t) * RįJA
2. RįJA=See Datasheet
3. TJM-TA = P* RįJA (t)
4. Duty Cycle, D=t1/t2
Single Pulse
10
-3
10
-4
10
-3
10
-2
10
-1
10
0
10
1
Square Wave Pulse Duration (sec)
Figure 13. Normalized Thermal Transient Impedance Curve
5-6
10
2