ETC ZUMT860C

SOT323 PNP SILICON PLANAR
GENERAL PURPOSE TRANSISTORS
ZUMT860B
ZUMT860C
ISSUE 1 - DECEMBER 1998
Partmarking Detail:
ZUMT860B
ZUMT860C
T2B
T22
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
-50
V
Collector-Emitter Voltage
VCES
-50
V
Collector-Emitter Voltage
VCEO
-45
V
Emitter-Base Voltage
VEBO
-5
V
Continuous Collector Current
IC
-100
mA
Peak Pulse Current
IEM
-200
mA
Base Current
IBM
-200
mA
330
mW
-55 to +150
°C
Power Dissipation at Tamb =25°C
Ptot
Operating and Storage
Temperature Range
Tj:Tstg
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT
CONDITIONS.
-15
-4
nA
µA
VCB = -30V
VCB = -30V, Tamb=150°C
-75
-250
mV
IC=-10mA, IB=-0.5mA
-250
-650
mV
IC=-100mA, IB=-5mA
-300
-600
Collector Cut-Off Current ICBO
Collector-Emitter
Saturation Voltage
VCE(sat)
Base-Emitter
Saturation Voltage
VBE(sat)
Base-Emitter Voltage
VBE
-700
-850
-580
-650
-750
-820
mV
IC=-10mA*
mV
IC=-10mA ,IB=-0.5mA
IC=-100mA,IB=-5mA
mV
IC=-2mA, VCE=-5V
IC=-10mA, VCE=-5V
* Collector-Emitter Saturation Voltage at IC = 10mA for the characteristics going through the
operating point IC = 11mA, VCE = 1V at constant base current.
ZUMT860B
ZUMT860C
TYPICAL CHARACTERISTICS
1.2
1.2
IC/IB=10
+25° C
0.8
0.8
IC/IB=10
IC/IB=20
IC/IB=50
-55°C
+25°C
+100°C
+150°C
0.4
0.4
0
0
1m
10m
100m
1
1m
IC - Collector Current (A)
VCE(sat) v IC
10m
100m
1
IC - Collector Current (A)
VCE(sat) v IC
500
1.0
VCE=5V
IC/IB=10
+100°C
+25°C
-55°C
250
0.5
-55°C
+25°C
+100°C
+150°C
0
0
10m
1m
100m
1m
1
IC - Collector Current (A)
hFE v IC
10m
100m
1
IC - Collector Current (A)
VBE(sat) v IC
1
VCE=5V
1.0
100m
0.5
-55°C
+25°C
+100°C
10m
0
1m
10m
100m
IC - Collector Current (A)
VBE(on) v IC
1
1m
100m
DC
1s
100ms
10ms
1ms
100µs
100us
1
10
VCE - Collector Emitter Voltage (V)
Safe Operating Area
100
ZUMT860B
ZUMT860C
ELECTRICAL CHARACTERISTICS (Continued)
PARAMETER
SYMBOL
Noise Figure
N
MIN. TYP.
MAX. UNIT CONDITIONS.
-
1
4
dB
VCB = -5V, IC=-200µA,
RG=2kΩ, f=1kHz,
∆f=200Hz
–
1
3
dB
VCB = -5V, IC=-200µA,
RG=2kΩ, f=30Hz to 15kHz
at -3dB points
VCB = -5V, IC=-200µA,
RG=2kΩ, f=10Hz to 50Hz
at -3dB points
Equivalent Noise Voltage
en
–
–
110
nV
Dynamic
Characteristics
hie
3.2
4.5
8.5
kΩ
6
8.7
15
Group B
Group C
Group B
hre
Group C
Group B
hfe
450
Group C
Group B
hoe
Group B
–
–
Group C
Static Forward
Current Ratio
240
hFE
–
hFE
Transition
Frequency
fT
Collector-Base
Capacitance
Cobo
x10-4
3
x10-4
330
600
30
60
290
–
VCE=-5V
Ic=-2mA
f=1kHz
500
900
60
110
µs
µs
150
220
Group C
kΩ
2
IC=-0.01mA,VCE=-5V
475
IC=-2mA, VCE=-5V
–
IC=-100mA,VCE=-5V
270
IC=-0.01mA, VCE=-5V
420
500
800
IC=-2mA, VCE=-5V
–
–
–
IC=-100mA,VCE=-5V
–
300
–
4.5
MHz
IC=-10mA,VCE=-5V
f=100MHz
pF
VCB=-10V, f=1MHz