32Mx64 bits PC100 SDRAM Unbuffered DIMM based on 16Mx8 SDRAM with LVTTL, 4 banks & 4K Refresh HYM71V653201 H-Series DESCRIPTION The Hyundai HYM71V653201 H-Series are 32Mx64bits Synchronous DRAM Modules. The modules are composed of sixteen 16Mx8bit CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin glass-epoxy printed circuit board. One 0.22uF and one 0.0022uF decoupling capacitors per each SDRAM are mounted on the PCB. The HYM71V653201 H-Series are Dual In-line Memory Modules suitable for easy interchange and addition of 256Mbytes memory. The HYM71V653201 H-Series are offering fully synchronous operation referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve very high bandwidth. FEATURES • PC100MHz support • SDRAM internal banks : four banks • 168pin SDRAM Unbuffered DIMM • Module bank : two physical bank • Serial Presence Detect with EEPROM • Auto refresh and self refresh • 1.375” (34.93mm) Height PCB with Double Sided components • 4096 refresh cycles / 64ms • Single 3.3 ± 0.3V power supply • All devices pins are compatible with LVTTL interface • Data mask function by DQM • Programmable Burst Length and Burst Type -. 1, 2, 4, 8 or Full Page for Sequential Burst -. 1, 2, 4 or 8 for Interleave Burst • Programmable /CAS Latency -. 2, 3 Clocks ORDERING INFORMATION PART NO. MAX. FREQUENCY HYM71V653201TH-8 125MHz HYM71V653201TH-10P 100MHz HYM71V653201TH-10S 100MHz HYM71V653201LTH-8 125MHz HYM71V653201LTH-10P 100MHz HYM71V653201LTH-10S 100MHz INTERNAL BANK REF. POWER SDRAM PACKAGE PLATING TSOP-II Gold Normal 4 Banks 4K Low Power This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 1.1/Dec.99 1999 Hyundai MicroElectronics PC100 SDRAM Unbuffered DIMM HYM71V653201 H-Series PIN DESCRIPTION PIN NAME DESCRIPTION CK0~CK3 Clock Inputs The System Clock Input. All other inputs are registered to the SDRAM on the rising edge of CLK. CKE0, CKE1 Clock Enable Controls internal clock signal and when deactivated, the SDRAM will be one of the states among power down, suspend or self refresh. /S0~ /S3 Chip Select Enables or disables all inputs except CK, CKE and DQM. BA0, BA1 SDRAM Bank Address A0~A11 Address Inputs /RAS Row Address Strobe /CAS Column Address Strobe /WE Write Enable DQM0~DQM7 Data Input/Output Mask Controls output buffers in read mode and masks input data in write mode. DQ0~DQ63 Data Input/Output Multiplexed data input/output pins VCC Power Supply (3.3V) Power supply for internal circuits and input/output buffers VSS Ground Ground SCL SPD Clock Input Serial Presence Detect Clock Input SDA SPD Data Input/Output Serial Presence Detect Data input/output SA0~SA2 SPD Address Input Serial Presence Detect Address input WP Write Protect for SPD Write Protect for Serial Presence Detect on DIMM NC No Connect No Connect or Don’ t Use Rev. 1.1/Dec.99 Select bank to be activated during /RAS activity. Select bank to be read/written during /CAS activity Row address : RA0~RA11, Column address : CA0~CA9 Auto-precharge flag : A10 /RAS define the operation. Refer to the function truth table for details. /CAS define the operation. Refer to the function truth table for details. /WE define the operation. Refer to the function truth table for details. 2 PC100 SDRAM Unbuffered DIMM HYM71V653201 H-Series PIN ASSIGNMENTS FRONT SIDE BACK SIDE FRONT SIDE BACK SIDE PIN NO. NAME PIN NO. NAME PIN NO. NAME PIN NO. NAME 1 VSS 85 VSS 41 VCC 125 CK1 2 3 DQ0 DQ1 86 87 DQ32 DQ33 42 43 CK0 VSS 126 127 NC VSS 4 DQ2 88 DQ34 44 NC 128 CKE0 5 DQ3 89 DQ35 45 /S2 129 /S3 6 VCC 90 VCC 46 DQM2 130 DQM6 7 8 DQ4 DQ5 91 92 DQ36 DQ37 47 48 DQM3 NC 131 132 DQM7 NC 9 DQ6 93 DQ38 49 VCC 133 VCC 10 DQ7 94 DQ39 50 NC 134 NC 51 NC 135 NC DQ40 52 53 NC NC 136 137 NC NC Architecture Key 11 DQ8 95 12 VSS 96 VSS 54 VSS 138 VSS 13 DQ9 97 DQ41 55 DQ16 139 DQ48 14 DQ10 98 DQ42 56 DQ17 140 DQ49 15 16 DQ11 DQ12 99 100 DQ43 DQ44 57 58 DQ18 DQ19 141 142 DQ50 DQ51 17 DQ13 101 DQ45 59 VCC 143 VCC 18 VCC 102 VCC 60 DQ20 144 DQ52 19 DQ14 103 DQ46 61 NC 145 NC 20 21 DQ15 NC 104 105 DQ47 NC 62 63 NC NC 146 147 NC NC 22 NC 106 NC 64 VSS 148 VSS 23 VSS 107 VSS 65 DQ21 149 DQ53 24 25 NC NC 108 109 NC NC 66 67 DQ22 DQ23 150 151 DQ54 DQ55 26 VCC 110 VCC 68 VSS 152 VSS 27 /WE 111 /CAS 69 DQ24 153 DQ56 28 DQM0 112 DQM4 70 DQ25 154 DQ57 29 30 DQM1 /S0 113 114 DQM5 /S1 71 72 DQ26 DQ27 155 156 DQ58 DQ59 31 NC 115 /RAS 73 VCC 157 VCC 32 VSS 116 VSS 74 DQ28 158 DQ60 33 A0 117 A1 75 DQ29 159 DQ61 34 35 A2 A4 118 119 A3 A5 76 77 DQ30 DQ31 160 161 DQ62 DQ63 36 A6 120 A7 78 VSS 162 VSS 37 A8 121 A9 79 CK2 163 CK3 38 A10/AP 122 BA0 80 NC 164 NC 39 40 BA1 VCC 123 124 A11 VCC 81 82 WP SDA 165 166 SA0 SA1 83 SCL 167 SA2 84 VCC 168 VCC Voltage Key Rev. 1.1/Dec.99 3 PC100 SDRAM Unbuffered DIMM HYM71V653201 H-Series BLOCK DIAGRAM Note : 1. The serial resistor values of DQs are 10 Ohms. Rev. 1.1/Dec.99 4 PC100 SDRAM Unbuffered DIMM HYM71V653201 H-Series SERIAL PRESENCE DETECT BYTE FUNCTION NUMBER DESCRIBED FUNCTION -8 -10P VALUE -10S -8 -10P BYTE0 # of Bytes Written into Serial Memory at Module Manufacturer 128 Bytes 80h BYTE1 Total # of Bytes of SPD Memory Device 256 Bytes 08h BYTE2 Fundamental Memory Type BYTE3 -10S SDRAM 04h # of Row Addresses on This Assembly 12 0Ch BYTE4 # of Column Addresses on This Assembly 10 0Ah BYTE5 # of Module Banks on This Assembly 2 Banks 02h BYTE6 Data Width of This Assembly 64 Bits 40h BYTE7 Data Width of This Assembly (Continued) - 00h BYTE8 Voltage Interface Standard of This Assembly BYTE9 SDRAM Cycle Time @ /CAS Latency=3 8ns 10ns 10ns 80h A0h A0h BYTE10 Access Time from Clock @ /CAS Latency=3 6ns 6ns 6ns 60h 60h 60h BYTE11 DIMM Configuration Type BYTE12 Refresh Rate/Type BYTE13 Primary SDRAM Width BYTE14 Error Checking SDRAM Width BYTE15 Minimum Clock Delay Back to Back Random Column Address BYTE16 Burst Lengths Supported BYTE17 # of Banks on Each SDRAM Device BYTE18 SDRAM Device Attributes, CAS # Latency BYTE19 SDRAM Device Attributes, CS # Latency /CS Latency=0 01h BYTE20 SDRAM Device Attributes, Write Latency /WE Latency=0 01h BYTE21 SDRAM Module Attributes Neither Buffered nor Registered 00h +/-10% voltage tolerance, Burst Read Single bit Write, Precharge All, Auto Precharge, Early RAS Precharge 0Eh LVTTL 1 01h None 00h 15.625µs / Self Refresh Supported 80h x8 08h None 00h tCCD = 1 CLK 01h 1,2,4,8,Full Page 8Fh 4 Banks 04h /CAS Latency=2,3 06h 2 BYTE22 SDRAM Device Attributes, General BYTE23 SDRAM Cycle Time @ /CAS Latency=2 10ns 10ns 12ns A0h A0h C0h BYTE24 Access Time from Clock @ /CAS Latency=2 6ns 6ns 6ns 60h 60h 60h BYTE25 SDRAM Cycle Time @ /CAS Latency=1 - - - 00h 00h 00h BYTE26 Access Time from Clock @ /CAS Latency=1 - - - 00h 00h 00h BYTE27 Minimum Row Precharge Time (tRP) 20ns 20ns 20ns 14h 14h 14h BYTE28 Minimum Row Active to Row Active Delay (tRRD) 16ns 20ns 20ns 10h 14h 14h BYTE29 Minimum /RAS to /CAS Delay (tRCD) 20ns 20ns 20ns 14h 14h 14h BYTE30 Minimum /RAS Pulse width (tRAS) 48ns 50ns 50ns 30h 32h 32h BYTE31 Module Bank Density BYTE32 Command and Address Signal Input Setup Time 2ns 2ns 2ns 20h 20h 20h BYTE33 Command and Address Signal Input Hold Time 1ns 1ns 1ns 10h 10h 10h BYTE34 Data Signal Input Setup Time 2ns 2ns 2ns 20h 20h 20h BYTE35 Data Signal Input Hold Time 1ns 1ns 1ns 10h 10h 10h BYTE36 –61 Superset Information (may be used in future) BYTE62 SPD Revision BYTE63 Checksum for Bytes 0~62 BYTE64 Manufacturer JEDEC ID Code BYTE65 ~71 ....Manufacturer JEDEC ID Code BYTE72 Manufacturing Location Rev. 1.1/Dec.99 128MB 20h - 00h Intel SPD 1.2A - 12h F1h 17h Hyundai JEDEC ID ADh Unused FFh HEI (Korea) HEA (United States) HEU (Europe) NOTE 3, 8 37h 01h 02h 03h 5 PC100 SDRAM Unbuffered DIMM HYM71V653201 H-Series Continued BYTE FUNCTION NUMBER DESCRIBED BYTE73 Manufacturer’ s Part Number (Component) BYTE74 Manufacturer’ s Part Number (128Mb based) BYTE75 Manufacturer’ s Part Number (Voltage Interface) BYTE76 FUNCTION -8 -10P VALUE -10S -8 -10P -10S NOTE 7 (SDRAM) 37h 4, 5 1 31h 4, 5 V (3.3V, LVTTL) 56h 4, 5 Manufacturer’ s Part Number (Data Width) 6 36h 4, 5 BYTE77 ....Manufacturer’ s Part Number (Data Width) 5 35h 4, 5 BYTE78 Manufacturer’ s Part Number (Memory Depth) 3 33h 4, 5 BYTE79 … .Manufacturer’ s Part Number (Memory Depth) 2 32h 4, 5 BYTE80 Manufacturer’ s Part Number (Refresh) 0 (4K Refresh) 30h 4, 5 BYTE81 Manufacturer’ s Part Number (Internal Banks) 1 (4 Banks) 31h 4, 5 BYTE82 Manufacturer’ s Part Number (Package Type) T (TSOPII) 54h 4, 5 BYTE83 Manufacturer’ s Part Number (Module Type) H (x8 based) 48h 4, 5 BYTE84 Manufacturer’ s Part Number (Hyphen) - (Hyphen) 2Dh 4, 5 BYTE85 Manufacturer’ s Part Number (Min. Cycle Time) 8 1 1 38h 31h 31h BYTE86 ....Manufacturer’ s Part Number (Min. Cycle Time) Blank 0 0 20h 30h 30h BYTE87 ....Manufacturer’ s Part Number (Min. Cycle Time) Blank P S 20h 50h 53h BYTE88 ~90 Manufacturer’ s Part Number BYTE91 BYTE92 BYTE93 Manufacturing Date BYTE94 ....Manufacturing Date BYTE95 ~98 Assembly Serial Number BYTE99 ~125 Manufacturer Specific Data (may be used in future) BYTE126 System Frequency Support BYTE127 Intel Specification Details for 100MHz Support BYTE128 ~256 Unused Storage Locations 4, 5 4, 5 Blanks 20h 4, 5 Revision Code (for Component) Process Code - 4, 6 ....Revision Code (for PCB) Process Code - 4, 6 Work Week - 3, 6 Year - 3, 6 Serial Number - 6 None 00h 100MHz Refer to Note7 - 64h F7h F7h 8 F5h 7, 8 00h Note: 1. The bank address is excluded. 2. 1,2,4,8 for Interleave Burst Type 3. BCD adopted. 4. ASCII adopted. 5. Basically HYUNDAI writes Part No. except for ` HYM ` in Byte 73-90 to use the limited 18 bytes from byte 73 to 90 efficiently. 6. Not fixed but dependent. 7. CLK0~3 connected on the DIMM, TBD junction temp, CL2(3) support, Intel defined Concurrent Auto Precharge support 8. Refer to Intel SPD Specification Rev.1.2A. 9. In the case of L-part, character ‘ L’ will be added between byte81 and byte82. Rev. 1.1/Dec.99 6 PC100 SDRAM Unbuffered DIMM HYM71V653201 H-Series ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING UNIT 0 ~ 70 °C Ambient Temperature TA Storage Temperature TSTG -55 ~ 125 °C Voltage on any Pin relative to VSS VIN, VOUT -1.0 ~ 4.6 V Voltage on VDD relative to VSS VDD, VDDQ -1.0 ~ 4.6 V Short Circuit Output Current IOS 50 MA Power Dissipation PD 8 W Soldering Temperature · Time TSOLDER 260 · 10 °C · Sec Note : Operation at above absolute maximum can adversely affect device reliability. DC OPERATING CONDITION (TA = 0 to 70°C) PARAMETER SYMBOL MIN TYP. MAX UNIT NOTE Power Supply Voltage VCC 3.0 3.3 3.6 V 1 Input High Voltage VIH 2.0 3.0 VCC + 0.3 V 1, 2 Input Low Voltage VIL – 0.3 0 0.8 V 1, 3 Note : 1. All voltage are referenced to VSS = 0V. 2. VIH (max) is acceptable 5.6V AC pulse width with ≤ 3ns of duration. 3. VIL (min) is acceptable –2.0V AC pulse width with ≤ 3ns of duration. AC OPERATING CONDITION (TA = 0 to 70°C, VDD = 3.3 ± 0.3V, VSS = 0V) PARAMETER SYMBOL VALUE UNIT 2.4 / 0.4 V 1.4 V AC Input High / Low Level Voltage VIH / VIL Input Timing Measurement Reference Level Voltage Vtrip Input Rise / Fall Time tR / tF 1 ns Output Timing Measurement Reference Level Voltage Voutref 1.4 V Output Load Capacitance for Access Time Measurement CL *Note pF Note : *. Output load to measure access time is equivalent to two TTL gates and one capacitor (50pF). For details, refer to AC/DC output circuit. Rev. 1.1/Dec.99 7 PC100 SDRAM Unbuffered DIMM HYM71V653201 H-Series CAPACITANCE (TA = 25°C, f = 1MHz) PARAMETER Input Capacitance Data Input/Output Capacitance PIN SYMBOL MIN MAX TYP. UNIT CK0~CK3 CIN1 25 45 - pF CKE0,1 CIN2 35 55 - pF /S0~/S3 CIN3 25 40 - pF A0~A11, BA0, BA1 CIN4 60 90 - pF /RAS, /CAS, /WE CIN5 60 90 - pF DQM0~DQM7 CIN6 15 25 - pF DQ0~DQ63 CI/O 10 25 - pF OUTPUT LOAD CIRCUIT Rev. 1.1/Dec.99 8 PC100 SDRAM Unbuffered DIMM HYM71V653201 H-Series DC CHARACTERISTICS I (TA = 0 to 70°C, VDD = 3.3 ± 0.3V) PARAMETER SYMBOL MIN MAX UNIT NOTE Input Leakage Current ILI -16 16 uA 1 Output Leakage Current ILO -1 1 uA 2 Output High Voltage VOH 2.4 - V IOH = -4mA Output Low Voltage VOL - 0.4 V IOL = +4mA Note : 1. VIN = 0 to 3.6V. All other pins are not tested under VIN = 0V. 2. DOUT is disabled. VOUT = 0 to 3.6V. DC CHARACTERISTICS II (TA = 0 to 70°C, VDD = 3.3 ± 0.3V, VSS = 0V) SPEED PARAMETER Operating Current Precharge Standby Current in Power Down Mode SYMBOL Operating -10P -10S 1280 1280 1280 UNIT NOTE mA 1 Burst Length = 1, One bank active tRC ≥ tRC(min), IOL = 0mA IDD2P CKE ≤ VIL(max), tCK = min 32 mA IDD2PS CKE ≤ VIL(max), tCK = ∞ 24 mA IDD2N CKE ≥ VIH(min), /CS ≥ VIH(min), tCK = min Input signals are changed one time during 2clks. All other pins ≥ VDD – 0.2V or ≤ 0.2V 320 mA IDD2NS CKE ≥ VIH(max), tCK = ∞ Input signals are stable. 160 mA IDD3P CKE ≤ VIL(max), tCK = min 112 mA IDD3PS CKE ≤ VIL(max), tCK = ∞ 112 mA IDD3N CKE ≥ VIH(min), /CS ≥ VIH(min), tCK = min Input signals are changed one time during 2clks. All other pins ≥ VDD – 0.2V or ≤ 0.2V 640 mA IDD3NS CKE ≥ VIH(max), tCK = ∞ Input signals are stable. 640 mA Active Standby Current in Non Power Down Mode Burst Mode Current -8 IDD1 Precharge Standby Current in Non Power Down Mode Active Standby Current in Power Down Mode TEST CONDITION IDD4 tCK ≥ tCK(min), IOL = 0mA CL = 3 1680 1600 1600 All banks active CL = 2 1600 1600 1520 Auto Refresh Current IDD5 tRRC ≥ tRRC(min), All banks active Self Refresh Current IDD6 CKE ≤ 0.2V mA 1 4640 mA 2 32 mA 3 12.8 mA 4 Note : 1. IDD1 and IDD4 depend on output loading and cycle rates. Specified values are measured with the output open. 2. Min. of tRRC (Refresh /RAS cycle time) is shown at AC CHARACTERISTICS II. 3. HYM71V653201TH-8/10P/10S 4. HYM71V653201LTH-8/10P/10S Rev. 1.1/Dec.99 9 PC100 SDRAM Unbuffered DIMM HYM71V653201 H-Series AC CHARACTERISTICS I (AC operating conditions unless otherwise noted) -8 PARAMETER -10P -10S SYMBOL UNIT MIN MAX MIN /CAS Latency = 3 tCK3 8 /CAS Latency = 2 tCK2 10 Clock High Pulse Width tCHW 3 - 3 - Clock Low Pulse Width tCLW 3 - 3 /CAS Latency = 3 tAC3 - 6 /CAS Latency = 2 tAC2 - Data-Out Hold Time tOH Data-Input Setup Time tDS System Clock Cycle Time Access Time from Clock 1000 10 MAX 1000 MIN 10 NOTE MAX 1000 ns 3 - ns I - 3 - ns I - 6 - 6 ns 2 6 - 6 - 6 3 - 3 - 3 - ns 2 - 2 - 2 - ns 1 10 12 Data-Input Hold Time tDH 1 - 1 - 1 - ns 1 Address Setup Time tAS 2 - 2 - 2 - ns 1 Address Hold Time tAH 1 - 1 - 1 - ns 1 CKE Setup Time tCKS 2 - 2 - 2 - ns 1 CKE Hold Time tCKH 1 - 1 - 1 - ns 1 Command Setup Time tCS 2 - 2 - 2 - ns 1 Command Hold Time tCH 1 - 1 - 1 - ns 1 CLK to Data Output in Low-Z time ns CLK to Data Output in High-Z time tOLZ 1 - 1 - 1 - /CAS Latency = 3 tOHZ3 3 6 3 6 3 6 /CAS Latency = 2 tOHZ2 3 6 3 6 3 6 ns Note : 1. Assume tR / tF (input rise and fall time ) is 1ns. If tR & tF > 1ns, then [(tR+tF)/2-1]ns should be added to the parameter 2. Access times to be measured with input signals of 1v/ns edge rate, from 0.8v to 2.0v. If tR > 1ns, then (tR/2-0.5)ns should be added to the parameter Rev. 1.1/Dec.99 10 PC100 SDRAM Unbuffered DIMM HYM71V653201 H-Series AC CHARACTERISTICS II -8 PARAMETER -10P -10S SYMBOL UNIT MIN MAX MIN Operation tRC 68 Auto Refresh tRRC 68 /RAS to /CAS Delay tRCD 20 - 20 - /RAS Active Time tRAS 48 100K 50 /RAS Precharge Time tRP 20 - 20 /RAS to /RAS Bank Active Delay tRRD 16 - /CAS to /CAS Delay tCCD 1 - Write Command to Data-in Delay tWTL 0 Data-in to Precharge Command tDPL Data-in to Active Command tDAL DQM to Data-out Hi-Z /RAS Time Cycle - MIN 70 ns 20 - ns 100K 50 100K ns - 20 - ns 20 - 20 - ns 1 - 1 - CLK - 0 - 0 - CLK 1 - 1 - 1 - CLK 4 - 3 - 3 - CLK tDQZ 2 - 2 - 2 - CLK DQM to Data-in Mask tDQM 0 - 0 - 0 - CLK MRS to New Command tMRD 2 - 2 - 2 - CLK /CAS Latency = 3 tPROZ3 3 - 3 - 3 - /CAS Latency = 2 tPROZ2 2 - 2 - 2 - Power Down Exit Time tPDE 1 - 1 - 1 - CLK Self Refresh Exit Time tSRE 1 - 1 - 1 - CLK Refresh Time tREF - 64 - 64 - 64 ms 70 NOTE MAX - Precharge to Data Output Hi-Z - 70 MAX 70 CLK 1 Note : 1. A new command can be given tRRC after self refresh exit. Rev. 1.1/Dec.99 11 PC100 SDRAM Unbuffered DIMM HYM71V653201 H-Series OPERATING OPTION TABLE HYM71V653201(L)TH-8 /CAS LATENCY tRCD tRAS tRC tRP tAC tOH 125MHz (8.0ns) 3CLKS 3CLKS 6CLKS 9CLKS 3CLKS 6ns 3ns 100MHz (10.0ns) 2CLKS 2CLKS 5CLKS 7CLKS 2CLKS 6ns 3ns 83MHz (12.0ns) 2CLKS 2CLKS 4CLKS 6CLKS 2CLKS 6ns 3ns /CAS LATENCY tRCD tRAS tRC tRP tAC tOH 100MHz (10.0ns) 2CLKS 2CLKS 5CLKS 7CLKS 2CLKS 6ns 3ns 83MHz (12.0ns) 2CLKS 2CLKS 5CLKS 7CLKS 2CLKS 6ns 3ns 66MHz (15.0ns) 2CLKS 2CLKS 4CLKS 6CLKS 2CLKS 6ns 3ns /CAS LATENCY tRCD tRAS tRC tRP tAC tOH 100MHz (10.0ns) 3CLKS 2CLKS 5CLKS 7CLKS 2CLKS 6ns 3ns 83MHz (12.0ns) 2CLKS 2CLKS 5CLKS 7CLKS 2CLKS 6ns 3ns 66MHz (15.0ns) 2CLKS 2CLKS 4CLKS 6CLKS 2CLKS 6ns 3ns HYM71V653201(L)TH-10P HYM71V653201(L)TH-10S Rev. 1.1/Dec.99 12 PC100 SDRAM Unbuffered DIMM HYM71V653201 H-Series COMMAND TRUTH TABLE A10/ AP CKEn-1 CKEn /CS /RAS /CAS /WE DQM Mode Register Set H X L L L L X OP code H X X X No Operation H X X X L H H H Bank Active H X L L H H X H X L H L H X ADDR RA BA NOTE V Read L CA V Read with Autoprecharge H Write L H X L H L L X CA V Write with Autoprecharge H Precharge All Banks H X L L H L X Precharge Selected Bank Burst Stop H X DQM H Auto Refresh H H L L L Entry H L L L H X Exit L H H H H L X X V X H X X L H X X X X Self Refresh Entry L X L V X X L H H H H X X X L H H H H X X X L H H H H X X X L V V V L Precharge Power Down H X 1 X X Exit Entry L H H X L X Clock Suspend X Exit L H X X Note : 1. Existing Self Refresh occurs by asynchronously bringing CKE from low to high. 2. X = Don’ t care, H = Logic High, L = logic Low, BA = Bank Address, CA = Column Address, OP code = Operand code, NOP = No operation Rev. 1.1/Dec.99 13 PC100 SDRAM Unbuffered DIMM HYM71V653201 H-Series PACKAGE DIMENSIONS Rev. 1.1/Dec.99 14