ETC HYM76V8M635HGLT6-H

4Mx64 bits
PC133 SDRAM SO DIMM
based on 4Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh
HYM76V4M635HG(L)T6 Series
DESCRIPTION
The Hynix HYM76V4M635HGT6 Series are 4Mx64bits Synchronous DRAM Modules. The modules are composed of four 4Mx16bits
CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin glass-epoxy
printed circuit board. Two 0.33uF and one 0.1uF decoupling capacitors per each SDRAM are mounted on the PCB.
The Hynix HYM76V4M635HGT6 Series are Dual In-line Memory Modules suitable for easy interchange and addition of 32Mbytes
memory. The Hyundai HYM76V4M635HGT6 Series are fully synchronous operation referenced to the positive edge of the clock . All
inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve very high
bandwidth.
FEATURES
•
PC133/PC100MHz support
•
SDRAM internal banks : four banks
•
168pin SDRAM Unbuffered DIMM
•
Module bank : one physical bank
•
Serial Presence Detect with EEPROM
•
Auto refresh and self refresh
•
1.00” (25.40mm) Height PCB with double sided components
•
4096 refresh cycles / 64ms
•
Programmable Burst Length and Burst Type
•
Single 3.3±0.3V power supply
•
All device pins are compatible with LVTTL interface
•
Data mask function by DQM
- 1, 2, 4 or 8 or Full page for Sequential Burst
- 1, 2, 4 or 8 for Interleave Burst
•
Programmable CAS Latency ; 2, 3 Clocks
ORDERING INFORMATION
Part No.
Clock
Frequency
Internal
Bank
Ref.
Power
SDRAM
Package
Plating
TSOP-II
Gold
HYM76V4M635HGT6-K
Normal
HYM76V4M635HGT6-H
133MHz
4 Banks
4K
HYM76V4M635HGLT6-K
Low Power
HYM76V4M635HGLT6-H
This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any responsibility for use of
circuits described. No patent licenses are implied.
Rev. 0.3/Apr.01
PC133 SDRAM SO DIMM
HYM76V4M635HG(L)T6 Series
PIN DESCRIPTION
PIN
PIN NAME
DESCRIPTION
CK0, CK1
Clock Inputs
The system clock input. All other inputs are registered to the SDRAM on the
rising edge of CLK
CKE0
Clock Enable
Controls internal clock signal and when deactivated, the SDRAM will be one
of the states among power down, suspend or self refresh
/S0
Chip Select
Enables or disables all inputs except CK, CKE and DQM
BA0, BA1
SDRAM Bank Address
Selects bank to be activated during /RAS activity
Selects bank to be read/written during /CAS activity
A0 ~ A11
Address
Row Address : RA0 ~ RA11, Column Address : CA0 ~ CA7
Auto-precharge flag : A10
/RAS, /CAS, /WE
Row Address Strobe, Column
Address Strobe, Write Enable
/RAS, /CAS and /WE define the operation
Refer function truth table for details
DQM0~DQM7
Data Input/Output Mask
Controls output buffers in read mode and masks input data in write mode
DQ0 ~ DQ63
Data Input/Output
Multiplexed data input / output pin
VCC
Power Supply (3.3V)
Power supply for internal circuits and input buffers
V SS
Ground
Ground
SCL
SPD Clock Input
Serial Presence Detect Clock input
SDA
SPD Data Input/Output
Serial Presence Detect Data input/output
SA0~2
SPD Address Input
Serial Presence Detect Address Input
WP
Write Protect for SPD
Write Protect for Serial Presence Detect on DIMM
NC
No Connection
No connection
Rev. 0.3/Apr.01
2
PC133 SDRAM SO DIMM
HYM76V4M635HG(L)T6 Series
PIN ASSIGNMENTS
FRONT SIDE
BACK SIDE
PIN NO.
NAME
PIN NO.
1
VSS
3
DQ0
5
7
FRONT SIDE
BACK SIDE
NAME
PIN NO.
NAME
PIN NO.
2
VSS
71
NC
72
NC
4
DQ32
73
NC
74
*CK1
DQ1
6
DQ33
75
VSS
76
VSS
DQ2
8
DQ34
77
NC
78
NC
9
DQ3
10
DQ35
79
NC
80
NC
11
VCC
12
VCC
81
VCC
82
VCC
13
DQ4
14
DQ36
83
DQ16
84
DQ48
15
DQ5
16
DQ37
85
DQ17
86
DQ49
17
DQ6
18
DQ38
87
DQ18
88
DQ50
19
DQ7
20
DQ39
89
DQ19
90
DQ51
21
VSS
22
VSS
91
VSS
92
VSS
23
DQM0
24
DQM4
93
DQ20
94
DQ52
25
DQM1
26
DQM5
95
DQ21
96
DQ53
27
VCC
28
VCC
97
DQ22
98
DQ54
29
A0
30
A3
99
DQ23
100
DQ55
31
A1
32
A4
101
VCC
102
VCC
33
A2
34
A5
103
A6
104
A7
35
VSS
36
VSS
105
A8
106
BA0
37
DQ8
38
DQ40
107
VSS
108
VSS
39
DQ9
40
DQ41
109
A9
110
BA1
41
DQ10
42
DQ42
111
A10/AP
112
A11
43
DQ11
44
DQ43
113
VCC
114
VCC
45
VCC
46
VCC
115
DQM2
116
DQM6
47
DQ12
48
DQ44
117
DQM3
118
DQM7
49
DQ13
50
DQ45
119
VSS
120
VSS
51
DQ14
52
DQ46
121
DQ24
122
DQ56
53
DQ15
54
DQ47
123
DQ25
124
DQ57
55
VSS
56
VSS
125
DQ26
126
DQ58
57
NC
58
NC
127
DQ27
128
DQ59
59
NC
60
NC
129
VCC
130
VCC
131
DQ28
132
DQ60
Voltage Key
NAME
133
DQ29
134
DQ61
61
CK0
62
CKE0
135
DQ30
136
DQ62
63
VCC
64
VCC
137
DQ31
138
DQ63
65
/RAS
66
/CAS
139
VSS
140
VSS
67
/WE
68
NC
141
SDA
142
SCL
69
/S0
70
NC
143
VCC
144
VCC
Note : * CK1 are connected with termination R/C (Refer to the Block Diagram)
Rev. 0.3/Apr.01
3
PC133 SDRAM SO DIMM
HYM76V4M635HG(L)T6 Series
BLOCK DIAGRAM
Note : 1. The serial resistor values of DQs are 10ohms
2. The padding capacitance of termination R/C for CK1 is 10pF
Rev. 0.3/Apr.01
4
PC133 SDRAM SO DIMM
HYM76V4M635HG(L)T6 Series
SERIAL PRESENCE DETECT
BYTE
NUMBER
FUNCTION
DESCRIPTION
FUNCTION
VALUE
-H
-K
-H
-K
BYTE0
# of Bytes Written into Serial Memory at Module
Manufacturer
128 Bytes
80h
BYTE1
Total # of Bytes of SPD Memory Device
256 Bytes
08h
BYTE2
Fundamental Memory Type
BYTE3
# of Row Addresses on This Assembly
BYTE4
# of Column Addresses on This Assembly
BYTE5
SDRAM
04h
12
0Ch
8
08h
# of Module Banks on This Assembly
1 Bank
01h
BYTE6
Data Width of This Assembly
64 Bits
40h
BYTE7
Data Width of This Assembly (Continued)
-
00h
BYTE8
Voltage Interface Standard of This Assembly
BYTE9
SDRAM Cycle Time @/CAS Latency=3
7.5ns
7.5ns
75h
75h
BYTE10
Access Time from Clock @/CAS Latency=3
5.4ns
5.4ns
54h
54h
BYTE11
DIMM Configuration Type
BYTE12
Refresh Rate/Type
BYTE13
Primary SDRAM Width
BYTE14
Error Checking SDRAM Width
BYTE15
Minimum Clock Delay Back to Back Random Column
Address
BYTE16
Burst Lenth Supported
BYTE17
# of Banks on Each SDRAM Device
BYTE18
SDRAM Device Attributes, /CAS Lataency
BYTE19
SDRAM Device Attributes, /CS Lataency
BYTE20
SDRAM Device Attributes, /WE Lataency
BYTE21
SDRAM Module Attributes
LVTTL
1
01h
None
00h
15.625us
/ Self Refresh Supported
80h
x16
10h
None
00h
tCCD = 1 CLK
01h
1,2,4,8,Full Page
8Fh
4 Banks
04h
/CAS Latency=2,3
06h
/CS Latency=0
01h
/WE Latency=0
01h
Neither Buffered nor Registered
00h
+/- 10% voltage tolerence, Burst Read
Single Bit Write, Precharge All, Auto
Precharge, Early RAS Precharge
0Eh
2
BYTE22
SDRAM Device Attributes, General
BYTE23
SDRAM Cycle Time @/CAS Latency=2
7.5ns
10ns
75h
A0h
BYTE24
Access Time from Clock @/CAS Latency=2
5.4ns
6ns
54h
60h
BYTE25
SDRAM Cycle Time @/CAS Latency=1
-
-
00h
00h
BYTE26
Access Time from Clock @/CAS Latency=1
-
-
00h
00h
BYTE27
Minimum Row Precharge Time (tRP)
20ns
20ns
14h
14h
BYTE28
Minimum Row Active to Row Active Delay (tRRD)
15ns
15ns
0Fh
0Fh
BYTE29
Minimum /RAS to /CAS Delay (tRCD)
20ns
20ns
14h
14h
BYTE30
Minimum /RAS Pulse Width (tRAS)
45ns
45ns
2Dh
2Dh
BYTE31
Module Bank Density
BYTE32
Command and Address Signal Input Setup Time
1.5ns
1.5ns
15h
15h
BYTE33
Command and Address Signal Input Hold Time
0.8ns
0.8ns
08h
08h
BYTE34
Data Signal Input Setup Time
1.5ns
1.5ns
15h
15h
BYTE35
Data Signal Input Hold Time
0.8ns
0.8ns
08h
08h
BYTE36
~61
Superset Information (may be used in future)
BYTE62
SPD Revision
BYTE63
Checksum for Byte 0~62
BYTE64
Manufacturer JEDEC ID Code
BYTE65
~71
....Manufacturer JEDEC ID Code
Rev. 0.3/Apr.01
NOTE
32MB
08h
-
00h
Intel SPD 1.2A
-
12h
66
3, 8
0Dh
Hynix JEDED ID
ADh
Unused
FFh
5
PC133 SDRAM SO DIMM
HYM76V4M635HG(L)T6 Series
Continued
BYTE
NUMBER
FUNCTION
DESCRIPTION
BYTE72
Manufacturing Location
BYTE73
Manufacturer’s Part Number (Component)
BYTE74
Manufacturer’s Part Number (128Mb based)
BYTE75
Manufacturer’s Part Number (Voltage Interface)
BYTE76
Manufacturer’s Part Number (Memory Width)
BYTE78
Manufacturer’s Part Number (Module Type)
BYTE78
BYTE79
BYTE80
Manufacturer’s Part Number (Refresh, SDRAM Bank)
BYTE81
Manufacturer’s Part Number (Generation)
BYTE82
....Manufacturer’s Part Number (Generation)
BYTE83
Manufacturer’s Part Number (Package Type)
BYTE84
Manufacturer’s Part Number (Component Configuration)
BYTE85
Manufacturer’s Part Number (Hyphent)
BYTE86
Manufacturer’s Part Number (Min. Cycle Time)
BYTE87
~90
Manufacturer’s Part Number
BYTE91
FUNCTION
VALUE
NOTE
-H
-K
-H
-K
Hynix (Korea Area)
HSA (United States Area)
HSE (Europe Area)
HSJ (Japan Area)
Asia Area
0*h
1*h
2*h
3*h
4*h
10
7 (SDRAM)
37h
4, 5
6
36h
4, 5
V (3.3V, LVTTL)
56h
4, 5
4
34h
4, 5
M (SO DIMM)
4Dh
4, 5
Manufacturer’s Part Number (Data Width)
6
36h
4, 5
....Manufacturer’s Part Number (Data Width)
3
33h
4, 5
5 (4K Refresh, 4Banks)
35h
4, 5
H
48h
4, 5
G
47h
4, 5
T
54h
4, 5
6 (x16 based)
36h
4, 5
- (Hyphen)
K
2Dh
H
4Bh
4, 5
48h
4, 5
Blanks
20h
4, 5
Revision Code (for Component)
Process Code
-
4, 6
BYTE92
....Revision Code (for PCB)
Process Code
-
4, 6
BYTE93
Manufacturing Date
Work Week
-
3, 6
BYTE94
....Manufacturing Date
Year
-
3, 6
BYTE95
~98
Assembly Serial Number
Serial Number
-
6
BYTE99
~125
Manufacturer Specific Data (may be used in future)
None
00h
BYTE126
Reserved
100MHz
64h
7, 8, 9
BYTE127
Reserved
Refer to Note7
A7h
7, 8, 9
BYTE128
~256
Unused Storage Locations
-
00h
Note :
1. The bank address is excluded
2. 1, 2, 4, 8 for Interleave Burst Type
3. BCD adopted
4. ASCII adopted
5. Basically Hynix writes Part No. except for ‘HYM’ in Byte 73~90 to use the limited 18 bytes from byte 73 to byte 90
6. Not fixed but dependent
7. CK0 connected to DIMM, TBD junction temp, CL2(3) support, Intel defined Concurrent Auto Precharge support
8. Refer to the most recent Intel and JEDEC SPD Specification
9. These values are applied to PC100 applications only per Intel PC SDRAM specification
10. Refer to Hynix Web.Site
Rev. 0.3/Apr.01
6
PC133 SDRAM SO DIMM
HYM76V4M635HG(L)T6 Series
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Rating
Unit
Ambient Temperature
TA
0 ~ 70
°C
Storage Temperature
TSTG
-55 ~ 125
°C
Voltage on Any Pin relative to V S S
V IN, VOUT
-1.0 ~ 4.6
V
Voltage on V DD relative to VSS
V DD, V DDQ
-1.0 ~ 4.6
V
Short Circuit Output Current
IO S
50
mA
Power Dissipation
PD
1
W
Soldering Temperature ⋅ Time
TSOLDER
260 ⋅ 10
°C ⋅ Sec
Note : Operation at above absolute maximum rating can adversely affect device reliability.
DC OPERATING CONDITION (T A=0 to 70°C )
Parameter
Symbol
Min
Typ
Max
Unit
Note
Power Supply Voltage
V DD , VDDQ
3.0
3.3
3.6
V
1
Input High voltage
V IH
2.0
3.0
V DDQ + 0.3
V
1,2
Input Low voltage
V IL
-0.3
0
0.8
V
1,3
Note
Note :
1.All voltages are referenced to VSS = 0V
2.V IH(max) is acceptable 5.6V AC pulse width with <=3ns of duration.
3.V IL(min) is acceptable -2.0V AC pulse width with <=3ns of duration.
AC OPERATING TEST CONDITION (TA =0 to 70°C, VDD =3.3±0.3V, VSS=0V)
Parameter
Symbol
Value
Unit
AC Input High / Low Level Voltage
V IH / VIL
2.4/0.4
V
Input Timing Measurement Reference Level Voltage
Vtrip
1.4
V
Input Rise / Fall Time
tR / tF
1
ns
Output Timing Measurement Reference Level Voltage
Voutref
1.4
V
CL
50
pF
Output Load Capacitance for Access Time Measurement
1
Note :
1.Output load to measure access times is equivalent to two TTL gates and one capacitor (50pF). For details, refer to AC/DC output
load circuit
Rev. 0.3/Apr.01
7
PC133 SDRAM SO DIMM
HYM76V4M635HG(L)T6 Series
CAPACITANCE (TA=25°C, f=1MHz)
-K/H
Parameter
Pin
Input Capacitance
Data Input / Output Capacitance
Symbol
Unit
Min
Max
CK0
CI1
20
35
pF
CKE0
CI2
20
30
pF
/S0
CI3
20
30
pF
A0~11, BA0, BA1
CI4
20
30
pF
/RAS, /CAS, /WE
CI5
20
30
pF
DQM0~DQM7
CI6
10
15
pF
DQ0 ~ DQ63
C I/O
15
15
pF
OUTPUT LOAD CIRCUIT
Vtt=1.4V
RT=250 Ω
Output
Output
50pF
DC Output Load Circuit
Rev. 0.3/Apr.01
50pF
AC Output Load Circuit
8
PC133 SDRAM SO DIMM
HYM76V4M635HG(L)T6 Series
DC CHARACTERISTICS I (TA=0 to 70°C, VDD =3.3±0.3V)
Parameter
Symbol
Min.
Max
Unit
Note
Input Leakage Current
ILI
-4
4
uA
1
Output Leakage Current
ILO
-1
1
uA
2
Output High Voltage
V OH
2.4
-
V
IOH = -4mA
Output Low Voltage
V OL
-
0.4
V
IOL = +4mA
Note :
1.V IN = 0 to 3.6V, All other pins are not tested under V IN =0V
2.DOUT is disabled, VOUT =0 to 3.6
DC CHARACTERISTICS II
Speed
Parameter
Symbol
Test Condition
-K
-H
320
320
Operating Current
IDD1
Burst length=1, One bank active
tRC ≥ tRC (min), IOL =0mA
Precharge Standby Current
in Power Down Mode
IDD2P
CKE ≤ V IL (max), tCK = min
IDD2PS
CKE ≤ V IL (max), tCK =
IDD2N
CKE ≥ V IH (min), CS ≥ V IH (min), tCK = min
Input signals are changed one time during
2clks. All other pins ≥ V DD -0.2V or ≤ 0.2V
60
IDD2NS
CKE ≥ V IH (min), tCK = ∞
Input signals are stable.
60
IDD3P
CKE ≤ V IL (max), tCK = min
20
IDD3PS
CKE ≤ V IL (max), tCK =
IDD3N
CKE ≥ V IH (min), CS ≥ V IH (min), tCK = min
Input signals are changed one time during
2clks. All other pins ≥ V DD -0.2V or ≤ 0.2V
120
IDD3NS
CKE ≥ V IH (min), tCK = ∞
Input signals are stable.
120
Burst Mode Operating
Current
IDD4
tCK ≥ tCK(min), IOL=0mA
All banks active
Auto Refresh Current
IDD5
tRRC ≥ tRRC (min), All banks active
Self Refresh Current
IDD6
CKE ≤ 0.2V
Precharge Standby Current
in Non Power Down Mode
Active Standby Current
in Power Down Mode
Active Standby Current
in Non Power Down Mode
Unit
Note
mA
1
8
mA
∞
8
mA
mA
∞
20
mA
CL=3
480
480
CL=2
480
480
mA
1
800
mA
2
8
mA
3
2
mA
4
Note :
1. IDD1 and I DD4 depend on output loading and cycle rates. Specified values are measured with the output open
2. Min. of tRRC (Refresh RAS cycle time) is shown at AC CHARACTERISTICS II
3.HYM76V4M635HGT6-K/H
4.HYM76V4M635HGLT6-K/H
Rev. 0.3/Apr.01
9
PC133 SDRAM SO DIMM
AC CHARACTERISTICS I
HYM76V4M635HG(L)T6 Series
(AC operating conditions unless otherwise noted)
-K
Parameter
Unit
Min
System Clock
Cycle Time
CAS Latency = 3
-H
Symbol
tCK3
Max
7.5
Min
7.5
1000
ns
1000
tCK2
7.5
Clock High Pulse Width
tCHW
2.5
-
2.5
-
ns
1
Clock Low Pulse Width
tCLW
2.5
-
2.5
-
ns
1
CAS Latency = 3
tAC3
-
5.4
-
5.4
ns
CAS Latency = 2
tAC2
-
5.4
-
6
ns
Access Time
From Clock
CAS Latency = 2
Note
Max
10
ns
2
Data-Out Hold Time
tOH
2.7
-
2.7
-
ns
Data-Input Setup Time
tDS
1.5
-
1.5
-
ns
1
Data-Input Hold Time
tDH
0.8
-
0.8
-
ns
1
Address Setup Time
tAS
1.5
-
1.5
-
ns
1
Address Hold Time
tAH
0.8
-
0.8
-
ns
1
CKE Setup Time
tCKS
1.5
-
1.5
-
ns
1
CKE Hold Time
tCKH
0.8
-
0.8
-
ns
1
Command Setup Time
tCS
1.5
-
1.5
-
ns
1
Command Hold Time
tCH
0.8
-
0.8
-
ns
1
CLK to Data Output in Low-Z Time
tOLZ
1
-
1
-
ns
CLK to Data
Output in High-Z
Time
CAS Latency = 3
tOHZ3
2.7
5.4
2.7
5.4
ns
CAS Latency = 2
tOHZ2
2.7
5.4
3
6
ns
Note :
1.Assume tR / tF (input rise and fall time ) is 1ns
If tR & tF > 1ns, then [(tR+tF)/2-1]ns should be added to the parameter
2.Access times to be measured with input signals of 1v/ns edge rate, from 0.8v to 2.0v
If tR > 1ns, then (tR/2-0.5)ns should be added to the parameter
Rev. 0.3/Apr.01
10
PC133 SDRAM SO DIMM
HYM76V4M635HG(L)T6 Series
AC CHARACTERISTICS II
-K
Parameter
-H
Symbol
Unit
Min
Max
Min
Max
Operation
tRC
65
-
65
-
ns
Auto Refresh
tRRC
65
-
65
-
ns
RAS to CAS Delay
tRCD
20
-
20
-
ns
RAS Active Time
tRAS
45
100K
45
100K
ns
RAS Precharge Time
tRP
20
-
20
-
ns
RAS to RAS Bank Active Delay
tRRD
15
-
15
-
ns
CAS to CAS Delay
tCCD
1
-
1
-
CLK
Write Command to Data-In Delay
tWTL
0
-
0
-
CLK
Data-In to Precharge Command
tDPL
2
-
2
-
CLK
Data-In to Active Command
tDAL
5
-
5
-
CLK
DQM to Data-Out Hi-Z
tDQZ
2
-
2
-
CLK
DQM to Data-In Mask
tDQM
0
-
0
-
CLK
MRS to New Command
tMRD
2
-
2
-
CLK
CAS Latency = 3
tPROZ3
3
-
3
-
CLK
CAS Latency = 2
tPROZ2
2
-
2
-
CLK
Power Down Exit Time
tPDE
1
-
1
-
CLK
Self Refresh Exit Time
tSRE
1
-
1
-
CLK
Refresh Time
tREF
-
64
-
64
ms
Note
RAS Cycle Time
Precharge to Data
Output Hi-Z
1
Note :
1. A new command can be given tRRC after self refresh exit
Rev. 0.3/Apr.01
11
PC133 SDRAM SO DIMM
HYM76V4M635HG(L)T6 Series
DEVICE OPERATING OPTION TABLE
HYM76V4M635HG(L)T6-K
CAS Latency
tRCD
tRAS
tRC
tRP
tAC
tOH
133MHz(7.5ns)
2CLKs
2CLKs
5CLKs
7CLKs
2CLKs
5.4ns
2.7ns
125MHz(8ns)
3CLKs
3CLKs
6CLKs
9CLKs
3CLKs
6ns
3ns
100MHz(10ns)
2CLKs
2CLKs
5CLKs
7CLKs
2CLKs
6ns
3ns
HYM76V4M635HG(L)T6-H
CAS Latency
tRCD
tRAS
tRC
tRP
tAC
tOH
133MHz(7.5ns)
3CLKs
3CLKs
6CLKs
9CLKs
3CLKs
5.4ns
2.7ns
125MHz(8ns)
3CLKs
3CLKs
6CLKs
9CLKs
3CLKs
6ns
3ns
100MHz(10ns)
2CLKs
2CLKs
5CLKs
7CLKs
2CLKs
6ns
3ns
COMMAND TRUTH TABLE
Command
Mode Register Set
CKEn-1
CKEn
H
X
No Operation
H
X
Bank Active
H
X
Read
CS
RAS
A10/
AP
CAS
WE
DQM
X
OP code
X
X
L
L
L
L
H
X
X
X
L
H
H
H
L
L
H
H
ADDR
X
RA
X
L
H
L
H
X
CA
H
X
L
H
L
L
X
CA
H
X
L
L
H
L
X
X
Burst Stop
H
X
L
H
H
L
X
X
DQM
H
V
X
Auto Refresh
H
H
X
H
L
Write
Write with Autoprecharge
Precharge All Banks
Precharge selected Bank
Entry
Self
Refresh1
Exit
Entry
L
H
X
H
L
Precharge
power down
Clock
Suspend
Exit
L
H
Entry
H
L
Exit
L
H
L
L
L
H
X
X
L
L
L
H
H
X
X
X
L
H
H
H
H
X
X
X
L
H
H
H
H
X
X
X
L
H
H
H
H
X
X
X
L
V
V
V
X
X
Note
V
L
H
Read with Autoprecharge
BA
H
L
H
V
V
H
X
L
V
X
X
X
X
X
X
X
Note :
1. Exiting Self Refresh occurs by asynchronously bringing CKE from low to high
2. X = Don′t care, H = Logic High, L = Logic Low. BA =Bank Address, RA = Row Address, CA = Column Address,
Opcode = Operand Code, NOP = No Operation
Rev. 0.3/Apr.01
12
PC133 SDRAM SO DIMM
HYM76V4M635HG(L)T6 Series
PACKAGE DEMENSION
Rev. 0.3/Apr.01
13