PD - 90732E RADIATION HARDENED POWER MOSFET SURFACE MOUNT(LCC-18) IRHE7110 100V, N-CHANNEL ® ™ RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHE7110 IRHE3110 IRHE4110 IRHE8110 Radiation Level 100K Rads (Si) 300K Rads (Si) 600K Rads (Si) 1000K Rads (Si) RDS(on) 0.60Ω 0.60Ω 0.60Ω 0.60Ω ID 3.5A 3.5A 3.5A 3.5A LCC-18 International Rectifier’s RADHard HEXFET® technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. Features: n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light Weight Absolute Maximum Ratings Pre-Irradiation Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Package Mounting Surface Temperature Weight Units 3.5 2.2 14 15 0.12 ±20 68 — — 5.5 -55 to 150 A W W/°C V mJ A mJ V/ns o 300 ( for 5s) 0.42 (Typical ) C g For footnotes refer to the last page www.irf.com 1 04/15/02 IRHE7110 Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Min Typ Max Units 100 — — V — 0.10 — V/°C — — 2.0 0.8 — — — — — — — — 0.60 0.69 4.0 — 25 250 Ω IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance — — — — — — — — — — — — — — — — — — — 6.1 100 -100 11 3.0 3.3 20 25 40 40 — C iss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 290 100 15 — — — Test Conditions VGS = 0V, ID = 1.0mA Reference to 25°C, ID = 1.0mA nC VGS = 12V, ID =2.2A ➃ VGS = 12V, ID = 3.5A VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 2.2A ➃ VDS= 80V ,VGS=0V VDS = 80V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS =12V, ID =3.5A VDS = 50V ns VDD = 50V, ID =3.5A VGS =12V, RG = 7.5Ω V S( ) Ω Parameter BVDSS Drain-to-Source Breakdown Voltage ∆BV DSS/∆T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current µA nA Measured from the center of drain pad to center of source pad nH VGS = 0V, VDS = 25V f = 1.0MHz pF Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units IS ISM VSD t rr Q RR Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ton Forward Turn-On Time — — — — — — — — — — 26 104 1.4 820 12 Test Conditions A V nS µC Tj = 25°C, IS = 26A, VGS = 0V ➃ Tj = 25°C, IF = 26A, di/dt ≤ 100A/µs VDD ≤ 50V ➃ Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter R thJC RthJ-PCB Junction-to-Case Junction-to-PC Board Min Typ Max Units — — — 27 8.3 — °C/W Test Conditions Soldered to a copper clad PB Board Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics Pre-Irradiation IRHE7110 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅ Parameter 100K Rads(Si)1 Min BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source ➃ On-State Resistance (TO-3) Static Drain-to-Source ➃ On-State Resistance (LCC-18) Diode Forward Voltage ➃ Max 300 - 1000K Rads (Si) Min Max Test Conditions Units 100 2.0 — — — — — 4.0 100 -100 25 0.60 100 1.25 — — — — — 4.5 100 -100 25 0.80 VGS = 0V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20 V VDS=80V, VGS =0V VGS = 12V, ID =2.2A — 0.60 — 0.80 Ω VGS = 12V, ID =2.2A — 1.5 — 1.5 V VGS = 0V, IS = 3.5A V nA µA Ω 1. Part numbers IRHE7110 2. Part number IRHE3110, IRHE4110, IRHE8110 International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area Ion Cu Br Range VDS(V) (µm) @VGS=0V @VGS=-5V@VGS=-10V@VGS=-15V@VGS=-20V 43 100 100 100 80 60 39 100 90 70 50 — LET Energy MeV/(mg/cm2)) (MeV) 28 285 36.8 305 120 100 VDS 80 Cu 60 Br 40 20 0 0 -5 -10 -15 -20 -25 VGS Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHE7110 Post-Irradiation Pre-Irradiation Fig 1. Typical Response of Gate Threshhold Fig 2. Typical Response of On-State Resistance Vs. Total Dose Exposure Voltage Vs. Total Dose Exposure Fig 3. Typical Response of Transconductance Vs. Total Dose Exposure 4 Fig 4. Typical Response of Drain to Source Breakdown Vs. Total Dose Exposure www.irf.com Post-Irradiation Pre-Irradiation Fig 5. Typical Zero Gate Voltage Drain Current Vs. Total Dose Exposure IRHE7110 Fig 6. Typical On-State Resistance Vs. Neutron Fluence Level Fig 8a. Gate Stress of VGSS Equals 12 Volts During Radiation Fig 7. Typical Transient Response of Rad Hard HEXFET During 1x1012 Rad (Si)/Sec Exposure www.irf.com Fig 8b. VDSS Stress Equals 80% of BVDSS During Radiation 5 RadiationPost-Irradiation Characteristics Pre-Irradiation IRHE7110 Note: Bias Conditions during radiation: VGS = 12 Vdc, VDS = 0 Vdc Fig 9. Typical Output Characteristics Pre-Irradiation Fig 10. Typical Output Characteristics Post-Irradiation 100K Rads (Si) Fig 11. Typical Output Characteristics Post-Irradiation 300K Rads (Si) Fig 12. Typical Output Characteristics Post-Irradiation 1 Mega Rads (Si) 6 www.irf.com Radiation Characteristics Pre-Irradiation IRHE7110 Note: Bias Conditions during radiation: VGS = 0 Vdc, VDS = 80 Vdc Fig 13. Typical Output Characteristics Pre-Irradiation Fig 14. Typical Output Characteristics Post-Irradiation 100K Rads (Si) Fig 15. Typical Output Characteristics Post-Irradiation 300K Rads (Si) Fig 16. Typical Output Characteristics Post-Irradiation 1 Mega Rads (Si) www.irf.com 7 IRHE7110 Fig 17. Typical Output Characteristics Fig 19. Typical Transfer Characteristics 8 Pre-Irradiation Fig 18. Typical Output Characteristics Fig 20. Normalized On-Resistance Vs. Temperature www.irf.com Pre-Irradiation IRHE7110 Fig 21. Typical Capacitance Vs. Drain-to-Source Voltage Fig 22. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 23. Typical Source-Drain Diode Forward Voltage Fig 24. Maximum Safe Operating Area www.irf.com 9 IRHE7110 Pre-Irradiation VDS VGS RD D.U.T. RG + -VDD VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 26a. Switching Time Test Circuit VDS 90% 10% VGS Fig 25. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 26b. Switching Time Waveforms Fig 27. Maximum Effective Transient Thermal Impedance, Junction-to-Case 10 www.irf.com Pre-Irradiation IRHE7110 1 5V L VD S D .U .T RG IA S VGS 20V D R IV E R + - VD D A 0 .0 1 Ω tp Fig 28a. Unclamped Inductive Test Circuit V (B R )D S S tp Fig 28c. Maximum Avalanche Energy Vs. Drain Current IAS Current Regulator Same Type as D.U.T. Fig 28b. Unclamped Inductive Waveforms 50KΩ QG 12V .2µF .3µF 12 V QGS QGD + V - DS VGS VG 3mA Charge Fig 29a. Basic Gate Charge Waveform www.irf.com D.U.T. IG ID Current Sampling Resistors Fig 29b. Gate Charge Test Circuit 11 IRHE7110 Pre-Irradiation Foot Notes: ➀ Repetitive Rating; Pulse width limited by maximum junction temperature. ➁ VDD = 25V, starting TJ = 25°C, L=11.1mH Peak IL = 3.5A, VGS =12V ➂ ISD ≤ 3.5A, di/dt ≤ 140A/µs, VDD ≤ 100V, TJ ≤ 150°C ➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2% ➄ Total Dose Irradiation with VGS Bias. 12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. ➅ Total Dose Irradiation with VDS Bias. 80 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions — LCC-18 IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 04/02 12 www.irf.com