IMT4 Transistors General purpose (dual transistors) IMT4 VCBO VCEO −120 −120 V V Emitter-base voltage Collector current Power dissipation Junction temperature VEBO IC Pc Tj −5 −50 300 (TOTAL) 150 V mA mW °C Storage temperature Tstg −55~+150 °C 0.3Min. ROHM : SMT6 EIAJ : SC-74 JEDEC : SOT-457 ∗ ∗200mW per element must not be exceeded. !Package, marking, and Packaging specifications Part No. IMT4 SMT6 T4 T108 Marking Code Basic ordering unit (pieces) 3000 !Equivalent circuit IMT4 (4) (5) (3) (2) (6) (1) !Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit BVCBO BVCEO − − − − − − V V V − − −0.5 −0.5 µA − 140 − 820 − MHz V BVEBO −120 −120 −5 Collector cutoff current ICBO − Emitter cutoff current DC current transfer ratio IEBO − hFE fT 180 Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Transition frequency Collector-emitter saturation voltage ∗Transition frequency of the device. VCE(sat) − − − −0.5 µA Conditions IC=−50µA IC=−1mA IE=−50µA VCB=−100V VEB=−4V VCE=−6V, IC−2mA VCE=−12V, IE=2mA, f=100MHz IC/IB=−10mA/−1mA ∗ 1.1 Collector-base voltage Collector-emitter voltage (1) (2) 0.8 Unit 0~0.1 Limits 0.15 2.8 Symbol Package 0.95 0.95 1.9 2.9 1.6 !Absolute maximum ratings (Ta=25°C) Parameter (3) (4) (5) 0.3 IMT4 (6) !External dimensions (Units : mm) !Features 1) Two 2SA1514K chips in an AMT package. 2) High breakdown voltage. Each lead has same dimensions