2SD2318 Transistors High-current gain Power Transistor (60V, 3A) 2SD2318 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Limits Unit VCBO VCEO 80 60 6 3 4.5 V V V A A(Pulse) W VEBO Collector current IC Collector power dissipation PC Junction temperature Storage temperature Tj Tstg 1 15 150 -55~+150 1.5 5.1 6.5 0.5 C0.5 2.5 9.5 * W(Tc=25˚C) ˚C ˚C * Single pulse Pw=100ms !Packaging specifications and hFE Type Package hFE Code Basic ordering unit (pieces) 2SD2318 CPT3 UV TL 2500 !Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage BVCBO BVCEO - - V V V µA IC=50µA IC=1mA µA V VEB=6V VCE(sat) 80 60 6 - Base-emitter saturation voltage VBE(sat) - - 1.5 V hFE fT 560 - 50 60 1800 - MHz DC current transfer ratio Transition frequency Output capacitance * Measured using pulse current. BVEBO ICBO IEBO Cob 100 100 1.0 pF Conditions IE=50µA VCB=80V IC/IB=2A/0.05A IC/IB=2A/0.05A VCE/IC=4V/0.5A VCE=5V, IE=-0.2A, f=10MHz VCB=10V, IE=0A, f=1MHz * * * 2.3 0.9 2.3 1.5 0.65 0.8Min. ROHM : CPT3 EIAJ : SC-63 Symbol 5.5 0.9 2.3 (3) (2) (1) 1.0 0.5 !Absolute maximum ratings (Ta=25°C) 0.75 !External dimensions (Units : mm) !Features 1) High DC current gain. 2) Low saturation voltage. (Typ. VCE(sat) =0.5V at IC / IB=2A / 0.5A) 3) Complements the 2SB1639. (1) Base(Gate) (2) Collector(Drain) (3) Emitter(Source)