March 2002
Optical Communication Devices
10 Gb/s Optical Transmitter
TOLD387S-EAD Series
011025 (X)
cs Asia, Ltd.
ce
Century
ward Road West,
Kong
-0969
Building,
Lu, Chao Yang District,
(010)6590-8791
cs Korea
gjae-dong,
2)589-4302
gy Development
d.
dong New Area, Shanghai,
(021)6841-5002
cs Taiwan
za Bldg. 109
on 3, 10446 Taipei,Taiwan
(02)2514-7892
(As of August, 2001)
s & Marketing Division
o-ku, Tokyo, 105-8001, Japan
81-3-5444-9431
r use chemicals to dissolve them.
©2002 TOSHIBA CORPORATION
Printed in Japan
APPLICATIONS
/ SDH (OC-192 / STM-64) applications
• SONET
TOLD387S-EAD1: I-64. 2, 25-km application
TOLD387S-EAD2: S-64. 2b, 40-km application
TOLD387S-EAD3: 60-km or longer application
FEATURES
µm EML and Driver IC
•• 1.55
Optical isolator and thermoelectric cooler
compatible RF input
•• GPO
Dispersion penalty: < 2 dB
output power
• FiberTOLD387S-EAD1:
–5 dBm (min), –1 dBm (max)
TOLD387S-EAD2: –1 dBm (min), +2 dBm (max)
TOLD387S-EAD3: –3 dBm (min)
TOLD387S-EAD Series
DIMENSIONAL
Symbol
Min
Max
Unit
Tstg
Tc
If
Vr
Vm
Vss
Vref
Vxp
−40
−5
—
—
−15
−6.5
Vss−4.8
(Min: −6.5)
˚C
˚C
mA
V
V
V
Output amplitude control voltage
Voa
−6.5
Output bias control voltage
Vob
−6.5
Input data amplitude
Soldering temperature
Soldering time
Vin
Tsol
tsol
—
—
—
+85
+70
150
2
+2
+0.3
Vss+2.4
(Max: 0.3)
Vss+1.2
(Max: 0.3)
Vss+2.4
(Max: 0.3)
1.6
260
5
4- ø2.7
12.7
V
8.9
Item
Storage temperature
Operating case temperature
Laser forward current
Laser reverse voltage
Monitor diode (PIN-PD) bias voltage
Supply voltage to the driver IC
Cross-point reference voltage
Cross-point control voltage
V
V
Vpp
˚C
s
Note: Case temperature should be measured on heat spreader directly.
ELECTRICAL AND OPTICAL CHARACTERISTICS
(Case temperature: Tc = –5 to +70 ˚C, Tset = 25 ˚C unless otherwise specified.)
Symbol
Min
Typ.
Max
Unit
Threshold current
Item
Ith
—
15
40
mA
Operating current
Iop
50
—
100
mA
Laser diode forward voltage
Vf
—
—
2
V
RF input impedance
Zin
—
50
—
Ω
Note
9.6 max
TOLD387S-EAD Series
ABSOLUTE MAXIMUM RATINGS
Input data amplitude
Vin
0.5
—
1.0
Vpp
Supply voltage to the driver IC
Vss
−5.5
−5.2
−5.0
V
Supply current to the driver IC
Iss
—
0.2
0.3
A
Cross-point reference voltage
Vref
Vss+1.1
Vss+1.3
Vss+1.5
V
(1)
Cross-point control voltage
Vxp
Vref−0.3
—
Vref+0.3
V
(1)
Output amplitude control voltage
Voa
Vss
—
Vss+1.0
V
(2)
Output bias control voltage
Vob
Vss
—
Vss+2.2
V
(3)
λ
1530
—
1565
nm
(4)
SMSR
30
—
—
dB
(4)
(4)
Peak wavelength
Side mode suppression ratio
Extinction ratio
ER
9
—
—
dB
RF Return Loss (up to 7GHz)
S11
10
—
—
dB
Monitor diode current
Im
0.05
—
—
mA
Thermoelectric cooler current (Tc = 70˚C)
Itec
—
—
1.3
A
Thermoelectric cooler voltage (Tc = 70˚C)
Vtec
—
—
2.6
V
Thermistor resistance
Rth
9.5
10.0
10.5
kΩ
Note: The body of the mo
Notes:
(1) When Vref is open, self-bias voltage of about Vss+1.3V is applied to Vref. To prevent dependence of Vref on the supply voltage
Vss, use a regulated voltage source for Vref, or control the voltage of Vxp, so that the voltage difference, Vxp-Vref, is constant.
(2) To prevent dependence of the output amplitude on the supply voltage Vss, control the voltage of Voa, so that the voltage difference,
Voa-Vss, is constant.
(3) To prevent dependence of the output bias level on the supply voltage Vss, control the voltage of Vob, so that the voltage difference,
Vob-Vss, is constant. 23
(4) 10Gb/s, NRZ, PRBS 2 −1 modulated
PRECAUTION
TOLD387S-EAD series products lineup
Fiber Output Power (dBm) Maximum Dispersion
Part Number
Min
Target Distance
Dispersion Penalty
Max
(ps / nm)
(km)
(dB)
Application
TOLD387S-EAD1
−5
−1
500
25
<2
I-64.2
TOLD387S-EAD2
−1
+2
800
40
<2
S-64.2b
TOLD387S-EAD3
−3
−
1200
60
<2
−
(a) Power supply
A surge-free
To avoid cau
before turnin
(b) The product
(c) Safety: The l
DIMENSIONAL OUTLINE AND PIN ASSIGNMENT
Unit
(Unit: mm)
˚C
˚C
mA
V
V
V
15.24
1.27
13
5.6
1
12.7
V
8.9
4- ø2.7
5.25
V
V
Vpp
˚C
s
ø 4.1
5.8
10.65
GPO compatible
20.83
26.04
30
wise specified.)
Note
9.6 max
Unit
31 max
mA
mA
V
Ω
Pin Assignment
Vpp
Pin
1
2
3
4
5
6
7
V
A
V
(1)
V
(1)
V
(2)
V
(3)
nm
(4)
dB
(4)
dB
(4)
Function
Thermistor
Thermistor
LD DC bias (+)
Monitor PD anode (−)
Monitor PD cathode (+)
Output bias control voltage (Vob)
NC
Pin
8
9
10
11
12
13
GPO
Compatible
Function
Cross-point reference voltage (Vref)
Output-amplitude control voltage (Voa)
Cross-point control voltage (Vxp)
Supply voltage (Vss)
TEC (+)
TEC (−)
50 Ω RF input (AC coupled)
Note: The body of the module has to be grounded.
dB
mA
A
V
kΩ
ref on the supply voltage
e, Vxp-Vref, is constant.
that the voltage difference,
that the voltage difference,
Penalty
PRECAUTIONS
Application
)
2
I-64.2
2
S-64.2b
2
−
(a) Power supply: Transient electric spike may cause a damage to the laser, the photodiode or IC chips.
A surge-free power supply and a slow starter circuit should be used.
To avoid causing an electrical surge, pins should not be connected or disconnected on the test fixture
before turning the power off.
(b) The product should be grounded for obtaining the performance.
(c) Safety: The laser emits invisible light harmful to the human eyes. Direct viewing should be avoided.
Opti
OVERSEAS SUBSIDIARIES AND AFFILIATES
011025 (X)
Toshiba America
Electronic Components, Inc.
Toshiba Electronics Europe GmbH
Toshiba Electronics Asia, Ltd.
Düsseldorf Head Office
Hong Kong Head Office
Headquarters-Irvine, CA
9775 Toledo Way, Irvine, CA 92618, U.S.A.
Tel: (949)455-2000 Fax: (949)859-3963
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Germany
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Corporation
Seoul Head Office
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Corporation
Taipei Head Office
17F, Union Enterprise Plaza Bldg. 109
Min Sheng East Rd., Section 3, 10446 Taipei,Taiwan
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(As of August, 2001)
The information contained herein is subject to change without notice.
The information contained herein is presented only as a guide for the applications of our products.
No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
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can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid
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Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
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1-1, Shibaura 1-chome, Minato-ku, Tokyo, 105-8001, Japan
Tel: +81-3-3457-3405 Fax: +81-3-5444-9431
The products described in this document are subject to the foreign exchange and foreign trade laws.
Gallium arsenide (GaAs) is a substance used in some of the products described in this documents. GaAs dust and fumes are toxic. Do not break, cut or pulverize the products, or use chemicals to dissolve them.
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Website: http://www.semicon.toshiba.co.jp/eng/index.html
3682C-0203 D5
©2002 TOSHIBA CORPORATION
Printed in Japan