ETC TPS2042DR

TPS2042, TPS2052
DUAL POWER-DISTRIBUTION SWITCHES
SLVS173A – AUGUST 1998 – REVISED APRIL 1999
D
D
D
D
D
D
D
D
D
D
D
D
D
135-mΩ -Maximum (5-V Input) High-Side
MOSFET Switch
500 mA Continuous Current per Channel
Short-Circuit and Thermal Protection With
Overcurrent Logic Output
Operating Range . . . 2.7-V to 5.5-V
Logic-Level Enable Input
2.5-ms Typical Rise Time
Undervoltage Lockout
10 µA Maximum Standby Supply Current
Bidirectional Switch
Available in 8-pin SOIC and PDIP Packages
Ambient Temperature Range, –40°C to 85°C
2-kV Human-Body-Model, 200-V
Machine-Model ESD Protection
UL Listed – File No. E169910
TPS2042
D OR P PACKAGE
(TOP VIEW)
GND
IN
EN1
EN2
1
8
2
7
3
6
4
5
OC1
OUT1
OUT2
OC2
TPS2052
D OR P PACKAGE
(TOP VIEW)
GND
IN
EN1
EN2
1
8
2
7
3
6
4
5
OC1
OUT1
OUT2
OC2
description
The TPS2042 and TPS2052 dual power distribution switches are intended for applications where heavy
capacitive loads and short circuits are likely to be encountered. The TPS2042 and the TPS2052 incorporate
in single packages two 135-mΩ N-channel MOSFET high-side power switches for power distribution systems
that require multiple power switches. Each switch is controlled by a logic enable that is compatible with 5-V logic
and 3-V logic. Gate drive is provided by an internal charge pump designed to control the power-switch rise times
and fall times to minimize current surges during switching. The charge pump requires no external components
and allows operation from supplies as low as 2.7 V.
When the output load exceeds the current-limit threshold or a short is present, the TPS2042 and TPS2052 limit
the output current to a safe level by switching into a constant-current mode, pulling the overcurrent (OCx) logic
output low. When continuous heavy overloads and short circuits increase the power dissipation in the switch
causing the junction temperature to rise, a thermal protection circuit shuts off the switch to prevent damage.
Recovery from a thermal shutdown is automatic once the device has cooled sufficiently. Internal circuitry
ensures the switch remains off until valid input voltage is present.
The TPS2042 and TPS2052 are designed to limit at 0.9-A load. These power distribution switches are available
in 8-pin small-outline integrated circuit (SOIC) and 8-pin plastic dual-in-line packages (PDIP) and operate over
an ambient temperature range of –40°C to 85°C.
AVAILABLE OPTIONS
TA
ENABLE
RECOMMENDED
MAXIMUM CONTINUOUS
LOAD CURRENT
(A)
TYPICAL
SHORT-CIRCUIT
SHORT
CIRCUIT CURRENT
LIMIT AT 25°C
(A)
–40°C to 85°C
Active low
0.5
–40°C to 85°C
Active high
0.5
PACKAGED DEVICES
SOIC
(D)†
PDIP
(P)
0.9
TPS2042D
TPS2042P
0.9
TPS2052D
TPS2052P
† The D package is available taped and reeled. Add an R suffix to device type (e.g., TPS2042DR)
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Copyright  1999, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
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TPS2042, TPS2052
DUAL POWER-DISTRIBUTION SWITCHES
SLVS173A – AUGUST 1998 – REVISED APRIL 1999
TPS2042 functional block diagram
OC1
Thermal
Sense
GND
EN1
Current
Limit
Driver
Charge
Pump
†
CS
OUT1
UVLO
Power Switch
†
IN
CS
OUT2
Charge
Pump
Driver
† Current sense
Current
Limit
OC2
EN2
Thermal
Sense
Terminal Functions
TERMINAL
NO.
NAME
I/O
D OR P
DESCRIPTION
TPS2042
TPS2052
EN1
3
–
I
Enable input. Logic low turns on power switch, IN-OUT1.
EN2
4
–
I
Enable input. Logic low turns on power switch, IN-OUT2.
EN1
–
3
I
Enable input. Logic high turns on power switch, IN-OUT1.
EN2
–
4
I
Enable input. Logic high turns on power switch, IN-OUT2.
GND
1
1
I
Ground
IN
2
2
I
Input voltage
OC1
8
8
O
Over current. Logic output active low, for power switch, IN-OUT1
OC2
5
5
O
Over current. Logic output active low, for power switch, IN-OUT2
OUT1
7
7
O
Power-switch output
OUT2
6
6
O
Power-switch output
2
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TPS2042, TPS2052
DUAL POWER-DISTRIBUTION SWITCHES
SLVS173A – AUGUST 1998 – REVISED APRIL 1999
detailed description
power switch
The power switch is an N-channel MOSFET with a maximum on-state resistance of 135 mΩ (VI(IN) = 5 V).
Configured as a high-side switch, the power switch prevents current flow from OUTx to IN and IN to OUTx when
disabled. The power switch supplies a minimum of 500 mA per switch.
charge pump
An internal charge pump supplies power to the driver circuit and provides the necessary voltage to pull the gate
of the MOSFET above the source. The charge pump operates from input voltages as low as 2.7 V and requires
very little supply current.
driver
The driver controls the gate voltage of the power switch. To limit large current surges and reduce the associated
electromagnetic interference (EMI) produced, the driver incorporates circuitry that controls the rise times and
fall times of the output voltage. The rise and fall times are typically in the 2-ms to 4-ms range.
enable (ENx or ENx)
The logic enable disables the power switch and the bias for the charge pump, driver, and other circuitry to reduce
the supply current to less than 10 µA when a logic high is present on ENx (TPS2042) or a logic low is present
on ENx (TPS2052). A logic zero input on ENx or logic high on ENx restores bias to the drive and control circuits
and turns the power on. The enable input is compatible with both TTL and CMOS logic levels.
overcurrent (OCx)
The OCx open-drain output is asserted (active low) when an overcurrent or overtemperature condition is
encountered. The output will remain asserted until the overcurrent or overtemperature condition is removed.
current sense
A sense FET monitors the current supplied to the load. The sense FET measures current more efficiently than
conventional resistance methods. When an overload or short circuit is encountered, the current-sense circuitry
sends a control signal to the driver. The driver in turn reduces the gate voltage and drives the power FET into
its saturation region, which switches the output into a constant current mode and holds the current constant
while varying the voltage on the load.
thermal sense
The TPS2042 and TPS2052 implement a dual-threshold thermal trip to allow fully independent operation of the
power distribution switches. In an overcurrent or short-circuit condition the junction temperature rises. When
the die temperature rises to approximately 140°C, the internal thermal sense circuitry checks to determine which
power switch is in an overcurrent condition and turns off that switch, thus isolating the fault without interrupting
operation of the adjacent power switch. Hysteresis is built into the thermal sense, and after the device has cooled
approximately 20 degrees, the switch turns back on. The switch continues to cycle off and on until the fault is
removed. The (OCx) open-drain output is asserted (active low) when overtemperature or overcurrent occurs.
undervoltage lockout
A voltage sense circuit monitors the input voltage. When the input voltage is below approximately 2 V, a control
signal turns off the power switch.
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TPS2042, TPS2052
DUAL POWER-DISTRIBUTION SWITCHES
SLVS173A – AUGUST 1998 – REVISED APRIL 1999
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)†
Input voltage range, VI(IN) (see Note1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to 6 V
Output voltage range, VO(OUTx) (see Note1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to VI(IN) + 0.3 V
Input voltage range, VI(ENx) or VI(ENx) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to 6 V
Continuous output current, IO(OUTx) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . internally limited
Continuous total power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Dissipation Rating Table
Operating virtual junction temperature range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40°C to 125°C
Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65°C to 150°C
Lead temperature soldering 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . 260°C
Electrostatic discharge (ESD) protection: Human body model MIL-STD-883C . . . . . . . . . . . . . . . . . . . . . 2 kV
Machine model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.2 kV
† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: All voltages are with respect to GND.
DISSIPATION RATING TABLE
PACKAGE
TA ≤ 25°C
POWER RATING
DERATING FACTOR
ABOVE TA = 25°C
TA = 70°C
POWER RATING
TA = 85°C
POWER RATING
D
725 mW
5.8 mW/°C
464 mW
377 mW
P
1175 mW
9.4 mW/°C
752 mW
611 mW
recommended operating conditions
Input voltage, VI(IN)
TPS2042
TPS2052
MIN
MAX
MIN
MAX
2.7
5.5
2.7
5.5
UNIT
V
Input voltage, VI(ENx) or VI(ENx)
0
5.5
0
5.5
V
Continuous output current, IO(OUTx)
0
500
0
500
mA
–40
125
–40
125
°C
Operating virtual junction temperature, TJ
4
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TPS2042, TPS2052
DUAL POWER-DISTRIBUTION SWITCHES
SLVS173A – AUGUST 1998 – REVISED APRIL 1999
electrical characteristics over recommended operating junction temperature range, VI(IN)= 5.5 V,
IO = rated current, VI(ENx) = 0 V, VI(ENx) = Hi (unless otherwise noted)
power switch
TEST CONDITIONS†
PARAMETER
Static drain-source on-state
resistance, 5-V operation
rDS(on)
DS( )
Static drain-source on-state
resistance, 3.3-V operation
tr
Rise time
time, output
TPS2042
MIN
TPS2052
TYP
MAX
MIN
TYP
MAX
VI(IN) = 5 V,
IO = 0.5 A
TJ = 25°C,
80
95
80
95
VI(IN) = 5 V,
IO = 0.5 A
TJ = 85°C,
90
120
90
120
VI(IN) = 5 V,
IO = 0.5 A
TJ = 125°C,
100
135
100
135
VI(IN) = 3.3 V,
IO = 0.5 A
TJ = 25°C,
85
105
85
105
VI(IN) = 3.3 V,
IO = 0.5 A
TJ = 85°C,
100
135
100
135
VI(IN) = 3.3 V,
IO = 0.5 A
TJ = 125°C,
115
150
115
150
VI(IN) = 5.5 V,
CL = 1 µF,
TJ = 25°C,
RL=10 Ω
2.5
2.5
VI(IN) = 2.7 V,
CL = 1 µF,
TJ = 25°C,
RL=10 Ω
3
3
UNIT
mΩ
ms
VI(IN) = 5.5 V, TJ = 25°C,
4.4
4.4
CL = 1 µF,
RL=10 Ω
tf
Fall time,
time output
ms
VI(IN) = 2.7 V, TJ = 25°C,
2.5
2.5
CL = 1 µF,
RL=10 Ω
† Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account separately.
enable input ENx or ENx
PARAMETER
VIH
High-level input voltage
VIL
Low level input voltage
Low-level
II
Input current
ton
toff
Turnon time
TEST CONDITIONS
2.7 V ≤ VI(IN) ≤ 5.5 V
TPS2042
TPS2052
Turnoff time
TPS2042
MIN
TYP
TPS2052
MAX
2
MIN
TYP
MAX
2
V
4.5 V ≤ VI(IN) ≤ 5.5 V
0.8
0.8
2.7 V≤ VI(IN) ≤ 4.5 V
0.4
0.4
VI(ENx) = 0 V or VI(ENx) = VI(IN)
VI(ENx) = VI(IN) or VI(ENx) = 0 V
–0.5
0.5
–0.5
CL = 100 µF, RL=10 Ω
CL = 100 µF, RL=10 Ω
UNIT
0.5
20
20
40
40
V
µA
ms
current limit
PARAMETER
IOS
Short-circuit output current
TPS2042
TEST CONDITIONS†
MIN
VI(IN) = 5 V, OUT connected to GND,
Device enable into short circuit
TYP
0.7
0.9
TPS2052
MAX
MIN
1.1
0.7
TYP
0.9
MAX
1.1
UNIT
A
† Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account separately.
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TPS2042, TPS2052
DUAL POWER-DISTRIBUTION SWITCHES
SLVS173A – AUGUST 1998 – REVISED APRIL 1999
electrical characteristics over recommended operating junction temperature range, VI(IN)= 5.5 V,
IO = rated current, VI(ENx) = 0 V, VI(ENx) = Hi (unless otherwise noted) (continued)
supply current
PARAMETER
Su ly
Supply
current,,
low-level
output
t t
TPS2042
TEST CONDITIONS
No Load
on OUT
Su ly
Supply
current,,
high-level
output
t t
No Load
on OUT
MIN
TJ = 25°C
VI(ENx) = VI(IN) –40°C ≤ T ≤ 125°C
J
TPS2042
VI(EN
I(ENx)) = 0 V
TJ = 25°C
–40°C ≤ TJ ≤ 125°C
TPS2052
VI(ENx) = 0 V
TJ = 25°C
–40°C ≤ TJ ≤ 125°C
TPS2052
Leakage
g
current
OUT
connected
to ground
VI(ENx) = VI(IN) –40°C ≤ TJ ≤ 125°C
TPS2042
–40°C ≤ TJ ≤ 125°C
TPS2052
Reverse
leakage
current
IN = high
g
impedance
VI(EN) = 0 V
VI(ENx) = 0 V
VI(EN) = Hi
MIN
TYP
MAX
0.015
1
UNIT
1
10
µA
10
80
100
100
80
100
µA
100
100
µA
100
TPS2042
TJ = 25°C
MAX
0.015
TPS2042
TJ = 25°C
VI(EN
I(ENx)) = VI(IN)
–40°C ≤ TJ ≤ 125°C
TYP
TPS2052
0.3
µA
TPS2052
0.3
undervoltage lockout
PARAMETER
TEST CONDITIONS
Low-level input voltage
Hysteresis
TPS2042
MIN
TYP
2
TJ = 25°C
TPS2052
MAX
MIN
2.5
2
100
TYP
MAX
2.5
100
UNIT
V
mV
overcurrent OCx
PARAMETER
Sink current†
Output low voltage
Off-state current†
TEST CONDITIONS
TPS2042
MIN
VO = 5 V
IO = 5 mA, VOL(OCx)
VO = 5 V,
VO = 3.3 V
† Specified by design, not production tested.
6
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TYP
TPS2052
MAX
MIN
TYP
MAX
UNIT
10
10
mA
0.5
0.5
V
1
1
µA
TPS2042, TPS2052
DUAL POWER-DISTRIBUTION SWITCHES
SLVS173A – AUGUST 1998 – REVISED APRIL 1999
PARAMETER MEASUREMENT INFORMATION
OUTx
RL
tf
tr
CL
VO(OUTx)
90%
10%
90%
10%
TEST CIRCUIT
50%
VI(ENx)
50%
toff
ton
50%
toff
ton
90%
VO(OUTx)
50%
VI(ENx)
90%
VO(OUTx)
10%
10%
VOLTAGE WAVEFORMS
Figure 1. Test Circuit and Voltage Waveforms
VI(EN)
(5 V/div)
VI(EN)
(5 V/div)
VI(IN) = 5 V
TA = 25°C
CL = 0.1 µF
VO(OUT)
(2 V/div)
0
1
2
3
4
5
6
7
8
9
VI(IN) = 5 V
TA = 25°C
CL = 0.1 µF
VO(OUT)
(2 V/div)
10
0
1000
t – Time – ms
3000
4000
5000
t – Time – ms
Figure 2. Turnon Delay and Rise Time
with 0.1-µF Load
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2000
Figure 3. Turnoff Delay and Fall Time
with 0.1-µF Load
• DALLAS, TEXAS 75265
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TPS2042, TPS2052
DUAL POWER-DISTRIBUTION SWITCHES
SLVS173A – AUGUST 1998 – REVISED APRIL 1999
PARAMETER MEASUREMENT INFORMATION
VI(EN)
(5 V/div)
VI(EN)
(5 V/div)
VI(IN) = 5 V
TA = 25°C
CL = 1 µF
RL = 10 Ω
VO(OUT)
(2 V/div)
0
1
2
3
4
5
6
7
8
VI(IN) = 5 V
TA = 25°C
CL = 1 µF
RL = 10 Ω
VO(OUT)
(2 V/div)
9
10
0
2
4
6
t – Time – ms
8
10
12
14
16
18
20
t – Time – ms
Figure 4. Turnon Delay and Rise Time
with 1-µF Load
Figure 5. Turnoff Delay and Fall Time
with 1-µF Load
VI(IN) = 5 V
TA = 25°C
VI(IN) = 5 V
TA = 25°C
VI(EN)
(5 V/div)
VO(OUT)
(2 V/div)
IO(OUT)
(0.5 A/div)
IO(OUT)
(0.2 A/div)
0
1
2
3
4
5
6
7
8
9
10
0
10
Figure 6. TPS2042, Short-Circuit Current,
Device Enabled into Short
8
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20
30
40
50
60
70
80
90 100
t – Time – ms
t – Time – ms
Figure 7. TPS2042, Threshold Trip Current
with Ramped Load on Enabled Device
• DALLAS, TEXAS 75265
TPS2042, TPS2052
DUAL POWER-DISTRIBUTION SWITCHES
SLVS173A – AUGUST 1998 – REVISED APRIL 1999
PARAMETER MEASUREMENT INFORMATION
VI(IN) = 5 V
TA = 25°C
RL = 10 Ω
VI(EN)
(5 V/div)
VO(OC)
(5 V/div)
470 µF
220 µF
100 µF
VI(IN) = 5 V
Load Ramp,1A/100 ms
TA = 25°C
IO(OUT)
(0.5 A/div)
IO(OUT)
(o.2 A/div)
0
2
4
6
8
10
12
14
16
0
18 20
20
40
60
80 100 120 140 160 180 200
t – Time – ms
t – Time – ms
Figure 8. Inrush Current with 100-µF, 220-µF
and 470-µF Load Capacitance
Figure 9. Ramped Load on Enabled Device
VI(IN) = 5 V
TA = 25°C
VI(IN) = 5 V
TA = 25°C
VO(OC)
(5 V/div)
VO(OC)
(5 V/div)
IO(OUT)
(0.5 A/div)
IO(OUT)
(1 A/div)
0
400
800
1200
1600
2000
0
20
t – Time – µs
60
80 100 120 140 160 180 200
t – Time – µs
Figure 10. 4-Ω Load Connected to Enabled Device
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Figure 11. 1-Ω Load Connected
to Enabled Device
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9
TPS2042, TPS2052
DUAL POWER-DISTRIBUTION SWITCHES
SLVS173A – AUGUST 1998 – REVISED APRIL 1999
TYPICAL CHARACTERISTICS
TURNON DELAY
vs
INPUT VOLTAGE
TURNOFF DELAY
vs
INPUT VOLTAGE
6
17
CL = 1 µF
RL = 10 Ω
TA = 25°C
5.5
16
CL = 1 µF
RL = 10 Ω
TA = 25°C
Turn-Off Delay – ms
Turn-On Delay – ms
15
5
4.5
4
14
13
12
11
3.5
3
2.5
10
3
3.5
4
4.5
5
5.5
3
2.5
6
3
VI – Input Voltage – V
5
3.5
4
4.5
VI – Input Voltage – V
Figure 12
0.9
3.5
VI(IN) = 5 V
CL = 1 µF
TA = 25°C
3.3
f t – Fall Time – ms
r t – Rise Time – ms
0.8
FALL TIME
vs
LOAD CURRENT
3
2.8
2.7
2.6
2.5
0.1
6
Figure 13
RISE TIME
vs
LOAD CURRENT
2.9
5.5
VI(IN) = 5 V
TA = 25°C
CL = 1 µF
3.1
2.9
2.7
0.2
0.3
0.4 0.5 0.6
0.7
IL – Load Current – A
0.8
0.9
2.5
0.1
0.2
Figure 14
10
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0.3
0.4
0.5
0.6
0.7
IL – Load Current – A
Figure 15
• DALLAS, TEXAS 75265
TPS2042, TPS2052
DUAL POWER-DISTRIBUTION SWITCHES
SLVS173A – AUGUST 1998 – REVISED APRIL 1999
TYPICAL CHARACTERISTICS
SUPPLY CURRENT, OUTPUT ENABLED
vs
JUNCTION TEMPERATURE
SUPPLY CURRENT, OUTPUT DISABLED
vs
JUNCTION TEMPERATURE
1000
I I(IN) – Supply Current, Output Disabled – nA
I I(IN) – Supply Current, Output Enabled – µ A
100
VI(IN) = 5.5 V
VI(IN) = 5 V
90
VI(IN) = 4 V
80
VI(IN) = 2.7 V
70
VI(IN) = 3.3 V
60
50
–50
–25
75 100 125
0
25
50
TJ – Junction Temperature – °C
900
700
VI(IN) = 4 V
600
500
VI(IN) = 2.7 V
400
300
200
100
0
–100
–50
150
VI(IN) = 5.5 V
VI(IN) = 5 V
800
–25
Figure 16
SUPPLY CURRENT, OUTPUT DISABLED
vs
INPUT VOLTAGE
100
1000
– Supply Current, Output Disabled – nA
I I(IN)
I I(IN) – Supply Current, Output Enabled – µ A
150
Figure 17
SUPPLY CURRENT, OUTPUT ENABLED
vs
INPUT VOLTAGE
TJ = 125°C
90
TJ = 85°C
80
TJ = 25°C
70
TJ = 0°C
TJ = –40°C
60
50
2.5
100 125
0
25
50
75
TJ – Junction Temperature – °C
3
3.5
4
4.5
5
5.5
6
TJ = 125°C
800
600
400
200
TJ = 85°C
0
TJ = –40°C
–200
2.5
3
VI – Input Voltage – V
Figure 18
5
3.5
4
4.5
VI – Input Voltage – V
TJ = 0°C
5.5
6
Figure 19
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TJ = 25°C
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TPS2042, TPS2052
DUAL POWER-DISTRIBUTION SWITCHES
SLVS173A – AUGUST 1998 – REVISED APRIL 1999
STATIC DRAIN-SOURCE ON-STATE RESISTANCE
vs
JUNCTION TEMPERATURE
175
IO = 0.5 A
VI(IN) = 2.7 V
150
VI(IN) = 3.3 V
125
100
VI(IN) = 4.5 V
VI(IN) = 5 V
75
50
–50
–25
0
25
50
100
75
125
150
r DS(on) – Static Drain-Source On-State Resistance – mΩ
r DS(on) – Static Drain-Source On-State Resistance – m Ω
TYPICAL CHARACTERISTICS
STATIC DRAIN-SOURCE ON-STATE RESISTANCE
vs
INPUT VOLTAGE
175
IO = 0.5 A
150
TJ = 125°C
125
TJ = 85°C
100
TJ = 25°C
75
TJ = 0°C
TJ = –40°C
50
2.5
3
TJ – Junction Temperature – °C
Figure 20
5.5
6
Figure 21
INPUT-TO-OUTPUT VOLTAGE
vs
LOAD CURRENT
SHORT-CURCUIT OUTPUT CURRENT
vs
INPUT VOLTAGE
100
0.95
TA = 25°C
I OS – Short-circuit Output Current – A
VI(IN) – VI(OUTx) – Input-to-Output Voltage – mV
3.5
4
4.5
5
VI – Input Voltage – V
75
VI(IN) = 2.7 V
VI(IN) = 3.3 V
50
VI(IN) = 5 V
25
VI(IN) = 4.5 V
0
0.1
0.2
0.4
0.5
0.6
TJ = –40°C
0.9
TJ = 25°C
TJ = 125°C
0.85
0.8
2.5
3
IL – Load Current – A
Figure 22
12
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4.5
5
3.5
4
VI – Input Voltage – V
Figure 23
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6
TPS2042, TPS2052
DUAL POWER-DISTRIBUTION SWITCHES
SLVS173A – AUGUST 1998 – REVISED APRIL 1999
TYPICAL CHARACTERISTICS
THRESHOLD TRIP CURRENT
vs
INPUT VOLTAGE
SHORT CIRCUIT OUTPUT CURRENT
vs
JUNCTION TEMPERATURE
1.2
0.95
I OS – Short-circuit Output Current – A
Threshold Trip Current – A
TA = 25°C
Load Ramp = 1 A/10 ms
1.175
1.15
1.125
1.1
2.5
3
4.5
5
3.5
4
VI – Input Voltage – V
5.5
VI(IN) = 5 V
0.9
VI(IN) = 4 V
VI(IN) = 2.7 V
0.85
0.8
–50
6
–25
75
100
0
25
50
TJ – Junction Temperature – °C
Figure 24
Figure 25
UNDERVOLTAGE LOCKOUT
vs
JUNCTION TEMPERATURE
CURRENT-LIMIT RESPONSE
vs
PEAK CURRENT
2.5
500
VI(IN) = 5 V
TA = 25°C
450
2.4
Current Limit Response – µ s
UVLO – Undervoltage Lockout – V
125
Start Threshold
2.3
Stop Threshold
2.2
2.1
400
350
300
250
200
150
100
50
2
–50
0
–25
100 125
0
25
50
75
TJ – Junction Temperature – °C
150
0
5
7.5
10
12.5
Peak Current – A
Figure 26
Figure 27
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TPS2042, TPS2052
DUAL POWER-DISTRIBUTION SWITCHES
SLVS173A – AUGUST 1998 – REVISED APRIL 1999
TYPICAL CHARACTERISTICS
OVERCURRENT RESPONSE TIME (OCx)
vs
PEAK CURRENT
8
VI(IN) = 5 V
TA = 25°C
Response Time – µ s
6
4
2
0
0
2.5
5
7.5
10
12.5
Peak Current – A
Figure 28
APPLICATION INFORMATION
TPS2042
Power Supply
2.7 V to 5.5 V
2
IN
0.1 µF
OUT1
8
3
5
4
7
Load
0.1 µF
22 µF
0.1 µF
22 µF
OC1
EN1
6
Load
OUT2
OC2
EN2
GND
1
Figure 29. Typical Application
power-supply considerations
A 0.01-µF to 0.1-µF ceramic bypass capacitor between INx and GND, close to the device, is recommended.
Placing a high-value electrolytic capacitor on the output pin(s) is recommended when the output load is heavy.
This precaution reduces power-supply transients that may cause ringing on the input. Additionally, bypassing
the output with a 0.01-µF to 0.1-µF ceramic capacitor improves the immunity of the device to short-circuit
transients.
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DUAL POWER-DISTRIBUTION SWITCHES
SLVS173A – AUGUST 1998 – REVISED APRIL 1999
APPLICATION INFORMATION
overcurrent
A sense FET checks for overcurrent conditions. Unlike current-sense resistors, sense FETs do not increase the
series resistance of the current path. When an overcurrent condition is detected, the device maintains a
constant output current and reduces the output voltage accordingly. Complete shutdown occurs only if the fault
is present long enough to activate thermal limiting.
Three possible overload conditions can occur. In the first condition, the output has been shorted before the
device is enabled or before VI(IN) has been applied (see Figure 6). The TPS2042 and TPS2052 sense the short
and immediately switch into a constant-current output.
In the second condition, the short occurs while the device is enabled. At the instant the short occurs, very high
currents may flow for a short time before the current-limit circuit can react. After the current-limit circuit has
tripped (reached the overcurrent trip threshhold) the device switches into constant-current mode.
In the third condition, the load has been gradually increased beyond the recommended operating current. The
current is permitted to rise until the current-limit threshold is reached or until the thermal limit of the device is
exceeded (see Figure 7). The TPS2042 and TPS2052 are capable of delivering current up to the current-limit
threshold without damaging the device. Once the threshold has been reached, the device switches into its
constant-current mode.
OC response
The OC open-drain output is asserted (active low) when an overcurrent or overtemperature condition is
encountered. The output will remain asserted until the overcurrent or overtemperature condition is removed.
Connecting a heavy capacitive load to an enabled device can cause momentary false overcurrent reporting from
the inrush current flowing through the device, charging the downstream capacitor. An RC filter of 500 µs (see
Figure 30) can be connected to the OC pin to reduce false overcurrent reporting. Using low-ESR electrolytic
capacitors on the output lowers the inrush current flow through the device during hot-plug events by providing
a low impedance energy source, thereby reducing erroneous overcurrent reporting.
V+
V+
TPS2042
GND
Rpullup
TPS2042
Rpullup
Rfilter
OC1
GND
OC1
IN
OUT1
IN
OUT1
EN1
OUT2
EN1
OUT2
EN2
OC2
EN2
OC2
To USB
Controller
Cfilter
Figure 30. Typical Circuit for OC Pin and RC Filter for Damping Inrush OC Responses
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TPS2042, TPS2052
DUAL POWER-DISTRIBUTION SWITCHES
SLVS173A – AUGUST 1998 – REVISED APRIL 1999
APPLICATION INFORMATION
power dissipation and junction temperature
The low on-resistance on the n-channel MOSFET allows small surface-mount packages, such as SOIC, to pass
large currents. The thermal resistances of these packages are high compared to that of power packages; it is
good design practice to check power dissipation and junction temperature. The first step is to find rDS(on) at the
input voltage and operating temperature. As an initial estimate, use the highest operating ambient temperature
of interest and read rDS(on) from Figure 21. Next, calculate the power dissipation using:
PD
+ rDS(on)
I2
Finally, calculate the junction temperature:
TJ
Where:
+ PD
R qJA
) TA
TA = Ambient Temperature °C
RθJA = Thermal resistance SOIC = 172°C/W, PDIP = 106°C/W
Compare the calculated junction temperature with the initial estimate. If they do not agree within a few degrees,
repeat the calculation, using the calculated value as the new estimate. Two or three iterations are generally
sufficient to get a reasonable answer.
thermal protection
Thermal protection prevents damage to the IC when heavy-overload or short-circuit faults are present for
extended periods of time. The faults force the TPS2042 and TPS2052 into constant current mode, which causes
the voltage across the high-side switch to increase; under short-circuit conditions, the voltage across the switch
is equal to the input voltage. The increased dissipation causes the junction temperature to rise to high levels.
The protection circuit senses the junction temperature of the switch and shuts it off. Hysteresis is built into the
thermal sense circuit, and after the device has cooled approximately 20 degrees, the switch turns back on. The
switch continues to cycle in this manner until the load fault or input power is removed.
The TPS2042 and TPS2052 implement a dual thermal trip to allow fully independent operation of the power
distribution switches. In an overcurrent or short-circuit condition the junction temperature will rise. Once the die
temperature rises to approximately 140°C, the internal thermal sense circuitry checks which power switch is
in an overcurrent condition and turns that power switch off, thus isolating the fault without interrupting operation
of the adjacent power switch. Should the die temperature exceed the first thermal trip point of 140°C and reach
160°C, both switches turn off. The OC open-drain output is asserted (active low) when overtemperature or
overcurrent occurs.
undervoltage lockout (UVLO)
An undervoltage lockout ensures that the power switch is in the off state at power up. Whenever the input voltage
falls below approximately 2 V, the power switch will be quickly turned off. This facilitates the design of
hot-insertion systems where it is not possible to turn off the power switch before input power is removed. The
UVLO will also keep the switch from being turned on until the power supply has reached at least 2 V, even if
the switch is enabled. Upon reinsertion, the power switch will be turned on with a controlled rise time to reduce
EMI and voltage overshoots.
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TPS2042, TPS2052
DUAL POWER-DISTRIBUTION SWITCHES
SLVS173A – AUGUST 1998 – REVISED APRIL 1999
APPLICATION INFORMATION
universal serial bus (USB) applications
The universal serial bus (USB) interface is a 12-Mb/s, or 1.5-Mb/s, multiplexed serial bus designed for
low-to-medium bandwidth PC peripherals (e.g., keyboards, printers, scanners, and mice). The four-wire USB
interface is conceived for dynamic attach-detach (hot plug-unplug) of peripherals. Two lines are provided for
differential data, and two lines are provided for 5-V power distribution.
USB data is a 3.3-V level signal, but power is distributed at 5 V to allow for voltage drops in cases where power
is distributed through more than one hub across long cables. Each function must provide its own regulated 3.3 V
from the 5-V input or its own internal power supply.
The USB specification defines the following five classes of devices, each differentiated by power-consumption
requirements:
D
D
D
D
D
Hosts/self-powered hubs (SPH)
Bus-powered hubs (BPH)
Low-power, bus-powered functions
High-power, bus-powered functions
Self-powered functions
Self-powered and bus-powered hubs distribute data and power to downstream functions. The TPS2042 and
TPS2052 can provide power-distribution solutions for many of these classes of devices.
host/self-powered and bus-powered hubs
Hosts and self-powered hubs have a local power supply that powers the embedded functions and the
downstream ports (see Figure 31). This power supply must provide from 5.25 V to 4.75 V to the board side of
the downstream connection under full-load and no-load conditions. Hosts and SPHs are required to have
current-limit protection and must report overcurrent conditions to the USB controller. Typical SPHs are desktop
PCs, monitors, printers, and stand-alone hubs.
Power Supply
3.3 V
Downstream
USB Ports
5V
TPS2042
2
IN
0.1 µF
†
OUT1
†
D–
7
0.1 µF
8
3
USB
Control
D+
5
4
68 µF
VBUS
GND
OC1
EN1
D+
OC2
EN2
D–
6
OUT2
GND
0.1 µF
68 µF
VBUS
GND
1
† May need RC filter (see Figure 36)
Figure 31. Typical Two-Port USB Host/Self-Powered Hub
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TPS2042, TPS2052
DUAL POWER-DISTRIBUTION SWITCHES
SLVS173A – AUGUST 1998 – REVISED APRIL 1999
APPLICATION INFORMATION
host/self-powered and bus-powered hubs (continued)
Bus-powered hubs obtain all power from upstream ports and often contain an embedded function. The hubs
are required to power up with less than one unit load. The BPH usually has one embedded function, and power
is always available to the controller of the hub. If the embedded function and hub require more than 100 mA
on power up, the power to the embedded function may need to be kept off until enumeration is completed. This
can be accomplished by removing power or by shutting off the clock to the embedded function. Power switching
the embedded function is not necessary if the aggregate power draw for the function and controller is less than
one unit load. The total current drawn by the bus-powered device is the sum of the current to the controller, the
embedded function, and the downstream ports, and it is limited to 500 mA from an upstream port.
low-power bus-powered functions and high-power bus-powered functions
Both low-power and high-power bus-powered functions obtain all power from upstream ports; low-power
functions always draw less than 100 mA, and high-power functions must draw less than 100 mA at power up
and can draw up to 500 mA after enumeration. If the load of the function is more than the parallel combination
of 44 Ω and 10 µF at power up, the device must implement inrush current limiting (see Figure 32).
Power Supply
D+
3.3 V
TPS2042
D–
VBUS
GND
2
10 µF
0.1 µF
IN
OUT1
7
0.1 µF
8
USB
Control
3
5
4
10 µF
Internal
Function
OC1
EN1
OC2
6
EN2
OUT2
GND
0.1 µF
1
Figure 32. High-Power Bus-Powered Function
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10 µF
Internal
Function
TPS2042, TPS2052
DUAL POWER-DISTRIBUTION SWITCHES
SLVS173A – AUGUST 1998 – REVISED APRIL 1999
APPLICATION INFORMATION
USB power-distribution requirements
USB can be implemented in several ways, and, regardless of the type of USB device being developed, several
power-distribution features must be implemented.
D
D
D
Hosts/self-powered hubs must:
–
Current-limit downstream ports
–
Report overcurrent conditions on USB VBUS
Bus-powered hubs must:
–
Enable/disable power to downstream ports
–
Power up at <100 mA
–
Limit inrush current (<44 Ω and 10 µF)
Functions must:
–
Limit inrush currents
–
Power up at <100 mA
The feature set of the TPS2042 and TPS2052 allows them to meet each of these requirements. The integrated
current-limiting and overcurrent reporting is required by hosts and self-powered hubs. The logic-level enable
and controlled rise times meet the need of both input and output ports on bus-power hubs, as well as the input
ports for bus-power functions (see Figure 33).
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TPS2042, TPS2052
DUAL POWER-DISTRIBUTION SWITCHES
SLVS173A – AUGUST 1998 – REVISED APRIL 1999
APPLICATION INFORMATION
TUSB2040
Hub Controller
Upstream
Port
SN75240
BUSPWR
A C
B D
GANGED
D+
D–
DP0
DP1
DM0
DM1
Tie to TPS2041 EN Input
D+
A C
B D
GND
OC
5V
IN
DM2
5 V Power
Supply
EN
GND
5V
33 µF†
DM3
A C
B D
1 µF
TPS76333
4.7 µF
SN75240
D+
D–
Ferrite Beads
GND
DP4
IN
3.3 V
4.7 µF
VCC
DM4
5V
TPS2042
GND
GND
48-MHz
Crystal
D–
DP3
OUT
0.1 µF
Ferrite Beads
SN75240
DP2
TPS2041
Downstream
Ports
PWRON1
EN1 OUT1
OVRCUR1
OC1 OUT2
PWRON2
EN2
OVRCUR2
OC2
33 µF†
D+
IN
0.1 µF
XTAL1
D–
Ferrite Beads
GND
TPS2042
Tuning
Circuit
XTAL2
OCSOFF
PWRON3
EN1 OUT1
OVRCUR3
OC1 OUT2
PWRON4
EN2
OVRCUR4
OC2
5V
33 µF†
IN
D+
0.1 µF
GND
Ferrite Beads
D–
GND
5V
33 µF†
† USB rev 1.1 requires 120 µF per hub.
Figure 33. Hybrid Self/Bus-Powered Hub Implementation
20
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TPS2042, TPS2052
DUAL POWER-DISTRIBUTION SWITCHES
SLVS173A – AUGUST 1998 – REVISED APRIL 1999
APPLICATION INFORMATION
generic hot-plug applications (see Figure 34)
In many applications it may be necessary to remove modules or pc boards while the main unit is still operating.
These are considered hot-plug applications. Such implementations require the control of current surges seen
by the main power supply and the card being inserted. The most effective way to control these surges is to limit
and slowly ramp the current and voltage being applied to the card, similar to the way in which a power supply
normally turns on. Due to the controlled rise times and fall times of the TPS2042 and TPS2052, these devices
can be used to provide a softer start-up to devices being hot-plugged into a powered system. The UVLO feature
of the TPS2042 and TPS2052 also ensures the switch will be off after the card has been removed, and the switch
will be off during the next insertion. The UVLO feature guarantees a soft start with a controlled rise time for every
insertion of the card or module.
PC Board
Power
Supply
TPS2042
OC1
GND
IN
OUT1
2.7 V to 5.5 V
1000 µF
Optimum
0.1 µF
EN1
OUT2
EN2
OC2
Block of
Circuitry
Block of
Circuitry
Overcurrent Response
Figure 34. Typical Hot-Plug Implementation
By placing the TPS2042 and TPS2052 between the VCC input and the rest of the circuitry, the input power will
reach these devices first after insertion. The typical rise time of the switch is approximately 2.5 ms, providing
a slow voltage ramp at the output of the device. This implementation controls system surge currents and
provides a hot-plugging mechanism for any device.
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TPS2042, TPS2052
DUAL POWER-DISTRIBUTION SWITCHES
SLVS173A – AUGUST 1998 – REVISED APRIL 1999
MECHANICAL DATA
D (R-PDSO-G**)
PLASTIC SMALL-OUTLINE PACKAGE
14 PIN SHOWN
0.050 (1,27)
0.020 (0,51)
0.014 (0,35)
14
0.010 (0,25) M
8
0.008 (0,20) NOM
0.244 (6,20)
0.228 (5,80)
0.157 (4,00)
0.150 (3,81)
Gage Plane
0.010 (0,25)
1
7
0°– 8°
A
0.044 (1,12)
0.016 (0,40)
Seating Plane
0.069 (1,75) MAX
0.010 (0,25)
0.004 (0,10)
PINS **
0.004 (0,10)
8
14
16
A MAX
0.197
(5,00)
0.344
(8,75)
0.394
(10,00)
A MIN
0.189
(4,80)
0.337
(8,55)
0.386
(9,80)
DIM
4040047 / D 10/96
NOTES: A.
B.
C.
D.
All linear dimensions are in inches (millimeters).
This drawing is subject to change without notice.
Body dimensions do not include mold flash or protrusion, not to exceed 0.006 (0,15).
Falls within JEDEC MS-012
22
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TPS2042, TPS2052
DUAL POWER-DISTRIBUTION SWITCHES
SLVS173A – AUGUST 1998 – REVISED APRIL 1999
MECHANICAL DATA
P (R-PDIP-T8)
PLASTIC DUAL-IN-LINE PACKAGE
0.400 (10,60)
0.355 (9,02)
8
5
0.260 (6,60)
0.240 (6,10)
1
4
0.070 (1,78) MAX
0.310 (7,87)
0.290 (7,37)
0.020 (0,51) MIN
0.200 (5,08) MAX
Seating Plane
0.125 (3,18) MIN
0.100 (2,54)
0.021 (0,53)
0.015 (0,38)
0°– 15°
0.010 (0,25) M
0.010 (0,25) NOM
4040082 / B 03/95
NOTES: A. All linear dimensions are in inches (millimeters).
B. This drawing is subject to change without notice.
C. Falls within JEDEC MS-001
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IMPORTANT NOTICE
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any product or service without notice, and advise customers to obtain the latest version of relevant information
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pertaining to warranty, patent infringement, and limitation of liability.
TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extent
TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except those mandated by government requirements.
CERTAIN APPLICATIONS USING SEMICONDUCTOR PRODUCTS MAY INVOLVE POTENTIAL RISKS OF
DEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE (“CRITICAL
APPLICATIONS”). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, AUTHORIZED, OR
WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT DEVICES OR SYSTEMS OR OTHER
CRITICAL APPLICATIONS. INCLUSION OF TI PRODUCTS IN SUCH APPLICATIONS IS UNDERSTOOD TO
BE FULLY AT THE CUSTOMER’S RISK.
In order to minimize risks associated with the customer’s applications, adequate design and operating
safeguards must be provided by the customer to minimize inherent or procedural hazards.
TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent
that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other
intellectual property right of TI covering or relating to any combination, machine, or process in which such
semiconductor products or services might be or are used. TI’s publication of information regarding any third
party’s products or services does not constitute TI’s approval, warranty or endorsement thereof.
Copyright  1999, Texas Instruments Incorporated
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