ETC TSL253SR

TSL253, TSL254
PRECISION HIGHSPEED LIGHTTOVOLTAGE CONVERTER
TAOS022 – JANUARY 2000
Monolithic Silicon IC Containing
SR PACKAGE
(FRONT VIEW)
Photodiode, Operational Amplifier, and
Feedback Components
Converts Light Intensity to Output Voltage
High Irradiance Responsivity . . . Typically
60 mV/(µW/cm2) at λp = 880 nm (TSL253)
High Bandwidth
Compact 3-Leaded Clear Plastic Package
Low Dark (Offset) Voltage . . . 10 mV Max
At 25°C, VDD = 5 V
Single-Supply Operation
Wide Supply-Voltage Range . . . 2.7 V to
5.5 V
Low Supply Current . . . 600 µA Typical at
VDD = 5 V
1
2
GND VDD
3
OUT
Description
The TSL253 and TSL254 are light-to-voltage optical converters, each combining a 1-mm-square photodiode
and a transimpedance amplifier (feedback resistor = 16 MΩ, and 1 MΩ respectively) on a single monolithic IC.
Output voltage is directly proportional to the light intensity (irradiance) on the photodiode. These devices use
silicon-gate CMOS technology that provides improved amplifier offset-voltage stability and low power
consumption.
Functional Block Diagram
–
Voltage
Output
+
Terminal Functions
TERMINAL
NAME
DESCRIPTION
NO.
GND
1
Ground (substrate). All voltages are referenced to GND.
OUT
3
Output voltage
VDD
2
Supply voltage
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Copyright  2000, TAOS Inc.
Texas Advanced Optoelectronic Solutions Inc.
800 Jupiter Road, Suite 205 Plano, TX 75074 (972) 673-0759
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TSL253, TSL254
PRECISION HIGHSPEED LIGHTTOVOLTAGE CONVERTER
TAOS022 – JANUARY 2000
Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted)†
Supply voltage, VDD (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 V
Output current, IO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±10 mA
Duration of short-circuit current at (or below) 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 s
Operating free-air temperature range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –25°C to 85°C
Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –25°C to 85°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240°C
†
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: All voltages are with respect to GND.
Recommended Operating Conditions
Supply voltage, VDD
Operating free-air temperature, TA
MIN
MAX
2.7
5.5
UNIT
V
0
70
°C
Electrical Characteristics at VDD = 5 V, TA = 25°C, λp = 880 nm, RL = 10 kΩ (unless otherwise noted)
(see Notes 2 and 3)
TSL253
PARAMETER
VD
VOM
Dark voltage
Maximum output voltage swing
VO
Output voltage
αvo
Tem erature coefficient of output
Temperature
out ut
voltage (VO)
Ne
Irradiance responsivity
TEST CONDITIONS
MIN
TYP
IDD
MAX
Ee = 0
3
3.5
Ee = 35 µW/cm2
1.6
2
Ee = 2
MIN
TYP
UNIT
MAX
10
mW/cm2
10
3
3.5
1.6
2
mV
V
2.4
Ee = 595 µW/cm2
V
2.4
300 nm < λ < 700 nm
–0.2
–0.2
λp = 880 nm
0.05
0.05
60
3.5
mV/(µW/cm2)
60
60
dB
18
44
Power supply rejection, dc
Power supply rejection, ac
TSL254
fac = 1 kHz
Supply current
0.6
1.5
0.6
%/°C
dB
1.5
mA
NOTES: 2. The input irradiance Ee is supplied by a GaAlAs infrared-emitting diode with λp = 880 nm.
3. Irradiance responsivity is characterized over the range VO = 0.05 to 3 V.
Switching Characteristics at TA = 25°C (see Figure 1)
TSL253
PARAMETER
TEST CONDITIONS
MIN
TYP
tr
Output pulse rise time
VDD = 5 V,
λp = 880 nm
7.5
tf
Output pulse fall time
VDD = 5 V,
λp = 880 nm
Vn
Output noise voltage
g
VDD = 5 V
2
MIN
TYP
MAX
UNIT
2
µs
µs
7.5
2
f = 100 Hz
3
1.7
f = 1 kHz
3
1
f = 10 kHz
6
1.3
µV/√Hz
µ
√
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TSL254
MAX
TSL253, TSL254
PRECISION HIGHSPEED LIGHTTOVOLTAGE CONVERTER
TAOS022 – JANUARY 2000
PARAMETER MEASUREMENT INFORMATION
VDD
Pulse
Generator
Ee
2
Input
–
IRED
(see Note A)
3
tf
tr
Output
+
90%
RL
TSL25x
1
Output
(see Note B)
10%
90%
10%
VOLTAGE WAVEFORM
TEST CIRCUIT
NOTES: A. The input irradiance is supplied by a pulsed GaAlAs infrared-emitting diode with the following characteristics: λp = 880 nm,
tr < 1 µs, tf < 1 µs.
B. The output waveform is monitored on an oscilloscope with the following characteristics: tr < 100 ns, Zi ≥ 1 MHz, Ci ≤ 20 pF.
Figure 1. Switching Times
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TSL253, TSL254
PRECISION HIGHSPEED LIGHTTOVOLTAGE CONVERTER
TAOS022 – JANUARY 2000
TYPICAL CHARACTERISTICS
OUTPUT VOLTAGE
vs
IRRADIANCE
PHOTODIODE SPECTRAL RESPONSIVITY
1
10
TSL253
TSL254
0.8
Relative Responsivity
1
VO – Output Voltage – V
TA = 25°C
VDD = 5 V
λp = 880 nm
No Load
TA = 25°C
0.1
0.6
0.4
0.01
0.2
0
300
0.001
1
10
100
Ee – Irradiance – µW/cm2
1000
500
Figure 2
Figure 3
NORMALIZED OUTPUT VOLTAGE
vs
ANGULAR DISPLACEMENT
MAXIMUM OUTPUT VOLTAGE
vs
SUPPLY VOLTAGE
1
5
Ee = 2 mW/cm2
λp = 880 nm
RL = 10 kΩ
TA = 25°C
0.8
3
2
1
0
3
3.5
4
4.5
VDD – Supply Voltage – V
5
0.6
Optical Axis
4
VO – Normalized Output Voltage
VOM – Maximum Output Voltage – V
1100
700
900
λ – Wavelength – nm
0.4
0.2
0
80°
60°
40° 20°
0°
20° 40°
θ – Angular Displacement
Figure 4
60°
80°
Figure 5
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TSL253, TSL254
PRECISION HIGHSPEED LIGHTTOVOLTAGE CONVERTER
TAOS022 – JANUARY 2000
TYPICAL CHARACTERISTICS
POWER SUPPLY REJECTION
vs
FREQUENCY
SUPPLY CURRENT
vs
FREE-AIR TEMPERATURE
70
0.62
TA = 25°C
VDD = 5.5 V
No Load
0.61
50
I DD– Supply Current – mA
Power Supply Rejection – dB
60
TSL254
40
30
20
10
0
TSL253
–10
–20
0.1 k
1k
0.60
0.59
0.58
0.57
0.56
0.55
10 k
100 k
0.54
0
1000 k
10
20
Figure 6
50
60
70
OUTPUT VOLTAGE
vs
FREE-AIR TEMPERATURE
0.7
1.2
VO – Output Voltage – Normelized to – 25 °C
TA = 25°C
No Load
0.6
I DD – Supply Current – mA
40
Figure 7
SUPPLY CURRENT
vs
SUPPLY VOLTAGE
0.5
0.4
0.3
0.2
0.1
0
2.7
30
TA – Free-Air Temperature – °C
f – Frequency – Hz
VDD = 5V
λp = 300 nm to 700 nm
1
0.8
0.6
0.4
0.2
0
3.2
3.7
4.2
4.7
5.2
VDD – Supply Voltage – V
5.7
0
10
50
60
20
30
40
TA – Free-Air Temperature – °C
Figure 8
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Figure 9
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5
TSL253, TSL254
PRECISION HIGHSPEED LIGHTTOVOLTAGE CONVERTER
TAOS022 – JANUARY 2000
TYPICAL CHARACTERISTICS
OUTPUT VOLTAGE
vs
SUPPLY VOLTAGE
1.001
V O – Output Voltage (Normalized) – V
1
0.999
0.998
0.997
0.996
0.995
0.994
0.993
0.992
0.991
0.99
2.5
3
5.5
3.5
4
4.5
5
VDD – Supply Voltage – V
6
6.5
Figure 10
INTEGRATED NOISE VOLTAGE
vs
MEASUREMENT BANDWIDTH FREQUENCY
V n – Integrated Noise Voltage – µ Vrms
105
VDD = 5 V
TA = 25°C
104
TSL253
103
TSL254
102
10
0.1
1
10
100
1000
f – Measurement Bandwidth Frequency – kHz
Figure 11
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TSL253, TSL254
PRECISION HIGHSPEED LIGHTTOVOLTAGE CONVERTER
TAOS022 – JANUARY 2000
MECHANICAL DATA
PLASTIC SINGLE-IN-LINE PACKAGE (OPTO)
0.108 (2,74)
0.092 (2,34)
0.069 (1,75)
0.049 (1,25)
0.081 (2,05)
0.061 (1,55)
0.191 (4,85)
0.171 (4,35)
0.033 (0,85)
0.014 (0,35)
0.120 (3,05)
0.100 (2,55)
0.189 (4,80)
0.173 (4,40)
0.125 (3,18)
(See Note C)
0.049 (1,25)
0.029 (0,75)
0.619 (15,70)
0.520 (13,20)
1
2
3
0.084 (2,13)
0.074 (1,88)
0.020 (0,51)
0.015 (0,39)
0.025 (0,64)
0.016 (0,40)
0.165 (4,20)
0.150 (3,80)
NOTES: A.
B.
C.
D.
E.
F.
All linear dimensions are in inches (millimeters).
This drawing is subject to change without notice.
Lead dimensions are not controlled within this area.
All dimensions apply before solder dip.
Package body is a clear nonfilled optically transparent material
Index of refraction of clear plastic is 1.55.
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TSL253, TSL254
PRECISION HIGHSPEED LIGHTTOVOLTAGE CONVERTER
TAOS022 – JANUARY 2000
PRODUCTION DATA — information in this document is current at publication date. Products conform to
specifications in accordance with the terms of Texas Advanced Optoelectronic Solutions, Inc. standard
warranty. Production processing does not necessarily include testing of all parameters.
NOTICE
Texas Advanced Optoelectronic Solutions, Inc. (TAOS) reserves the right to make changes to the products contained in this
document to improve performance or for any other purpose, or to discontinue them without notice. Customers are advised
to contact TAOS to obtain the latest product information before placing orders or designing TAOS products into systems.
TAOS assumes no responsibility for the use of any products or circuits described in this document or customer product
design, conveys no license, either expressed or implied, under any patent or other right, and makes no representation that
the circuits are free of patent infringement. TAOS further makes no claim as to the suitability of its products for any particular
purpose, nor does TAOS assume any liability arising out of the use of any product or circuit, and specifically disclaims any
and all liability, including without limitation consequential or incidental damages.
TEXAS ADVANCED OPTOELECTRONIC SOLUTIONS, INC. PRODUCTS ARE NOT DESIGNED OR INTENDED FOR
USE IN CRITICAL APPLICATIONS IN WHICH THE FAILURE OR MALFUNCTION OF THE TAOS PRODUCT MAY
RESULT IN PERSONAL INJURY OR DEATH. USE OF TAOS PRODUCTS IN LIFE SUPPORT SYSTEMS IS EXPRESSLY
UNAUTHORIZED AND ANY SUCH USE BY A CUSTOMER IS COMPLETELY AT THE CUSTOMER’S RISK.
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