GF2402 Vishay Semiconductor New Product N-Channel Enhancement-Mode MOSFET TO-236AB (SOT-23) ® .122 (3.1) .110 (2.8) .016 (0.4) Top View .056 (1.43) .052 (1.33) 3 .016 (0.4) 0.035 (0.9) Pin Configuration 0.037 (0.95) 0.037 (0.95) .045 (1.15) .037 (0.95) .007 (0.175) .005 (0.125) .037(0.95) .037(0.95) 0.031 (0.8) 0.079 (2.0) 1. Gate 2. Source 3. Drain 2 max. .004 (0.1) 1 H C N TREENFET G VDS 20V RDS(ON) 0.20Ω ID 1.14A Mounting Pad Layout .102 (2.6) .094 (2.4) .016 (0.4) Dimensions in inches and (millimeters) Mechanical Data Features Case: SOT-23 Plastic Package • • • • • • • Weight: approx. 0.008g Marking Code: 402 Advanced trench process technology High density cell design for ultra-low on-resistance Popular SOT-23 package Compact and low profile Low threshold voltage Logic level Fast switching Maximum Ratings and Thermal Characteristics Parameter (TA = 25°C unless otherwise noted) Symbol Limit Unit Drain-Source Voltage VDS 20 V Gate-Source-Voltage VGS ± 12 V ID 1.14 0.91 A IDM 4.5 A PD 417 267 mW TJ, Tstg –55 to +150 °C RθJA 300 °C/W Continuous Drain Current (2) TJ = 150°C TA = 25°C TA = 70°C Pulsed Drain Current (1) Dissipation (2) TA = 25°C TA = 70°C Power TJ = 150°C Operating Junction and Storage Temperature Range Junction-to-Ambient Thermal Resistance (2) Notes: (1) Pulse width limited by maximum junction temperature. (2) Surface mounted on a 1in2 2oz. Cu PCB (FR-4 material) Document Number ##### 26-Nov-01 www.vishay.com 1 GF2402 Vishay Semiconductor Electrical Characteristics (T J Parameter = 25°C unless otherwise noted) Symbol Test Condition Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 10µA 20 – – V Gate Threshold Voltage Static VGS(th) VDS = VGS, ID = 250µA 0.6 – — V Gate-Body Leakage IGSS VDS = 0V, VGS = ± 12V – – ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 16V, VGS = 0V – – 1.0 µA On-State Drain Current(1) ID(on) Drain-Source On-State Resistance(1) VDS=16V, VGS=0V, TJ=125°C – – 10 µA VDS ≥ 5V, VGS = 4.5V, 4.0 – – A VGS = 4.5V, ID = 0.6A – 160 200 VGS = 2.5V, ID = 0.6A – 235 300 VDS = 16V, ID = 0.6A – 3.0 – – 1.8 4.0 – 0.35 – – 0.55 – – 3.5 10 – 7.5 18 – 19 40 – 30 35 RDS(on) Forward Transconductance(1) gfs mΩ S Dynamic Total Gate Charge (1) Gate-Source Gate-Drain Qg Charge (1) Qgs Charge (1) ID = 1.0A Qgd Turn-On Delay Time (1) td(on) Rise Time (1) Turn-Off Delay VDD = 20V, VGS = 4.5V VDD = 20V, RL = 20Ω ID ≈ 1A, VGEN = 8V RG = 6Ω tr Time (1) td(off) Fall Time (1) tf Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance nC ns – 120 – – 20 – Crss VGS = 0V VDS = 16V f = 1.0MHZ – 9.0 – IS TA = 25°C — — 1.05 A ISM — — — 4.2 A VSD IS = 0.5A, VGS = 0V – 0.77 1.0 V pF Source-Drain Diode Maximum Diode Forward Current Maximum Pulsed Diode Forward Diode Forward Current (2) Voltage (1) Note: (1) Pulse test; pulse width ≤ 300µs, duty cycle ≤ 2% (2) Pulse width limited by maximum junction temperature ton Switching Test Circuit RD VIN VOUT D Switching Waveforms td(on) RG tr td(off) tf 90 % 90% Output, VOUT VGEN toff 10% 10% INVERTED DUT G 90% 50% S Input, VIN 50% 10% PULSE WIDTH www.vishay.com 2 Document Number ##### 26-Nov-01 GF2402 Vishay Semiconductor Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 2 – Transfer Characteristics Fig. 1 – Output Characteristics VGS= 3.5V, 4.0V, 4.5V, 6.0V, 8.0V, 10.0V 2.5V 3 2 VDS = 10V 4 3.0V ID -- Drain Source Current (A) ID -- Drain Source Current (A) 4 2.0V 1 --55°C TJ = 125°C 3 25°C 2 1 1.5V 0 0 1 2 3 4 5 0 0.5 1.0 1.5 2.0 3.0 3.5 VGS -- Gate-to-Source Voltage (V) Fig. 3 – Threshold Voltage vs. Temperature Fig. 4 – On-Resistance vs. Drain Current 1.3 0.8 1.1 1.0 0.9 0.8 0.7 0.6 0.4 VGS = 2.5V 0.2 VGS = 4.5V 0.6 0.5 0 --25 0 25 50 75 100 125 0 150 1 2 3 4 5 ID -- Drain Current (A) TJ -- Junction Temperature (°C) Fig. 5 – On-Resistance vs. Junction Temperature Fig. 6 – On-Resistance vs. Gate-to-Source Voltage 1.6 0.8 VGS = 4.5V ID = 0.6A ID = 0.6A RDS(ON) -- On-Resistance (Ω) RDS(ON) -- On-Resistance (Normalized) 4.0 ID = 250µA 1.2 --50 2.5 VDS -- Drain-to-Source Voltage (V) RDS(ON) -- On-Resistance (Ω) VGS(th) -- Gate-to-Source Threshold Voltage (V) (Normalized) 0 1.4 1.2 1 0.8 0.6 0.4 TJ = 125°C 0.2 TJ = 25°C 0 0.6 --50 --25 0 25 50 75 100 TJ -- Junction Temperature (°C) Document Number ##### 26-Nov-01 125 150 0 2 4 6 8 10 VGS -- Gate-to-Source Voltage (V) www.vishay.com 3 GF2402 Vishay Semiconductor Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 8 – Capacitance Fig. 7 – Gate Charge 200 VDS = 20 ID = 1.0A f = 1MHz VGS = 0V 8 C -- Capacitance (pF) VGS -- Gate-to-Source Voltage (V) 10 6 4 150 Ciss 100 50 2 Coss Crss 0 0 0 1 2 3 0 4 5 Fig. 10 – Transient Thermal Impedance 1 RθJA(norm) -- Normalized Thermal Impedance IS -- Source Current (A) D = 0.5 1 TJ = 125°C 25°C 0.1 --55°C 0.4 0.6 0.8 1.0 1.2 1.4 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single Pulse 0.001 0.0001 1.6 1. Duty Cycle, D = t1/t2 2. RθJA (t) = RθJA(norm) *RθJA 3. RθJA = 300°C/W 4. TJ - TA = PDM * RθJA (t) 0.001 VSD -- Source-to-Drain Voltage (V) Fig. 11 – Power vs. Pulse Duration 0.1 1 10 100 Fig. 12 – Maximum Safe Operating Area 10 Single Pulse RθJA = 300°C/W TA = 25°C 10 RDS(ON) Limit ID -- Drain Current (A) 30 Power (W) 0.01 Pulse Duration (sec.) 40 20 10 1m 10 1 10 DC 0µ s s m s 0m 1s s 0.1 VGS = 4.5V Single Pulse RθJA = 300°C/W TA = 25°C 0.01 0.001 0.01 0.1 1 Pulse Duration (sec.) www.vishay.com 4 20 Fig. 9 – Source-Drain Diode Forward Voltage VGS = 0V 0 0.0001 15 VDS -- Drain-to-Source Voltage (V) 10 0.01 0.2 10 Qg -- Gate Charge (nC) 10 100 0.1 1 10 100 VDS -- Drain-Source Voltage (V) Document Number ##### 26-Nov-01