RN49A2 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) Silicon PNP Epitaxial Type (PCT process) RN49A2 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. • Including two devices in US6 (ultra super mini type with 6 leads) • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and manufacturing process Equivalent Circuit and Bias Resistor Values Q1 Q2 C B R1: 47 kΩ R2: 47 kΩ E R1 R2 R1 R2 B C R1: 2.2 kΩ R2: 47 kΩ E Q1: RN1104F Q2: RN2105F Marking Circuit (top view) 6 5 Equivalent 4 28 1 2 6 5 Q2 Q1 3 1 4 2 3 961001EAA1 • TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. • The information contained herein is subject to change without notice. 2000-04-12 1/5 RN49A2 Q1 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 10 V IC 100 mA Symbol Rating Unit Collector-base voltage VCBO −50 V Collector-emitter voltage VCEO −50 V Emitter-base voltage VEBO −5 V IC −100 mA Collector current Q2 Maximum Ratings (Ta = 25°C) Characteristics Collector current Q1, Q2 Common Maximum Ratings (Ta = 25°C) Characteristics Collector power dissipation Symbol Rating Unit 200 mW Tj 150 °C Tstg −55 to 150 °C PC (Note) Junction temperature Storage temperature range Note: Total rating 2000-04-12 2/5 RN49A2 Q1 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Symbol Test Condition Min Typ. Max ICBO VCB = 50 V, IE = 0 100 ICEO VCE = 50 V, IB = 0 500 IEBO VEB = 10 V, IC = 0 0.082 0.15 hFE Unit nA mA VCE = 5 V, IC = 10 mA 80 VCE (sat) IC = 5 mA, IB = 0.25 mA ― 0.1 0.3 V Input voltage (ON) VI (ON) VCE = 0.2 V, IC = 5 mA 1.5 5.0 V Input voltage (OFF) VI (OFF) VCE = 5 V, IC = 0.1 mA 1.0 1.5 V Transition frequency fT VCE = 10 V, IC = 5 mA 250 MHz VCB = 10 V, IE = 0, f = 1 MHz 3 6 pF kΩ DC current gain Collector-emitter saturation voltage Collector output capacitance Cob Input resistor R1 32.9 47 61.1 Resistor ratio R1/R2 0.9 1.0 1.1 Test Condition Min Typ. Max Q2 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Symbol ICBO VCB = −50 V, IE = 0 −100 ICEO VCE = −50 V, IB = 0 −500 IEBO VEB = −5 V, IC = 0 −0.078 −0.145 hFE Unit nA mA VCE = −5 V, IC = −10 mA 80 VCE (sat) IC = −5 mA, IB = −0.25 mA ― −0.1 −0.3 V Input voltage (ON) VI (ON) VCE = −0.2 V, IC = −5 mA −0.6 −1.1 V Input voltage (OFF) VI (OFF) VCE = −5 V, IC = −0.1 mA −0.5 −0.8 V Transition frequency fT VCE = −10 V, IC = −5 mA 200 MHz VCB = −10 V, IE = 0, f = 1 MHz 3 6 pF 1.54 2.2 2.86 kΩ DC current gain Collector-emitter saturation voltage Collector output capacitance Cob Input resistor R1 Resistor ratio R1/R2 0.0421 0.0468 0.0515 2000-04-12 3/5 RN49A2 Q1 IC – VI (ON) IC – VI (OFF) 100 10000 5000 (µA) (mA) 30 Collector current IC Collector current IC 10 Ta = 100°C 3 25 −25 1 0.3 Ta = 100°C 0.3 1 3 10 Input voltage VI (ON) 500 300 100 30 100 Common emitter 50 30 0.7 300 VCE = 5 V 0.9 1.1 Collector-emitter saturation voltage VCE (sat) (V) DC current gain hFE 1.5 25 −25 50 30 Common emitter 3 5 10 Collector current IC 1.9 2.1 (V) 0.3 0.1 Ta = 100°C 0.05 25 0.03 −25 Common emitter VCE = 5 V 10 1 1.7 VCE (sat) – IC Ta = 100°C 100 1.3 Input voltage VI (OFF) (V) hFE – IC 300 −25 25 1000 Common emitter VCE = 0.2 V 0.1 0.1 3000 30 (mA) 50 IC/IB = 20 100 0.01 1 3 5 10 Collector current IC 30 50 100 (mA) 2000-04-12 4/5 RN49A2 Q2 IC – VI (ON) IC – VI (OFF) −10000 −100 −3000 (µA) Ta = 100°C −10 Collector current IC Collector current IC (mA) −5000 −30 25 −3 −25 −1 −0.3 Ta = 100°C −1000 −25 25 −500 −300 −100 −50 −30 Common emitter Common emitter VCE = −5 V VCE = −0.2 V −0.1 −0.1 −0.3 −1 −3 −10 −30 Input voltage VI (ON) −100 −10 0 −300 −0.2 −0.4 −0.6 −0.8 Input voltage VI (OFF) (V) hFE – IC −1 −1.2 −1.4 (V) VCE (sat) – IC −1 DC current gain hFE Ta = 100°C 25 100 −25 50 30 Common emitter VCE = −5 V 10 −1 −3 −5 −10 Collector current IC −30 (mA) −50 −100 Collector-emitter saturation voltage VCE (sat) (V) Common emitter 300 −0.5 IC/IB = 20 −0.3 Ta = 100°C −0.1 25 −25 −0.05 −0.03 −1 −3 −5 −10 Collector current IC −30 −50 −100 (mA) 2000-04-12 5/5