DISCRETE SEMICONDUCTORS DATA SHEET BLT71/8 UHF power transistor Preliminary specification File under Discrete Semiconductors, SC08b 1996 Feb 06 Philips Semiconductors Preliminary specification UHF power transistor BLT71/8 FEATURES DESCRIPTION • High efficiency NPN silicon planar epitaxial transistor encapsulated in a plastic SOT96-1 (SO8) SMD package. • Very high gain • Internal pre-matched input • Low supply voltage. handbook, halfpage 8 APPLICATIONS 5 c • Hand-held radio equipment in common emitter class-AB operation for 900 MHz communication band. b PINNING - SOT96-1 PIN e SYMBOL 1 DESCRIPTION 1, 8 b base 2, 4, 5, 7 e emitter 3, 6 c collector 4 MAM227 Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA RF performance at Ts ≤ 60 °C in a common emitter test circuit. MODE OF OPERATION f (MHz) VCE (V) PL (W) CW, class-AB 900 4.8 1.2 1996 Feb 06 2 Gp (dB) ηC (%) ≥11 ≥55 typ. 13 typ. 63 Philips Semiconductors Preliminary specification UHF power transistor BLT71/8 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 16 V VCEO collector-emitter voltage open base − 8 V VEBO emitter-base voltage open collector − 2.5 V IC collector current (DC) − 500 mA Ptot total power dissipation − 2.9 W Tstg storage temperature −65 +150 °C Tj operating junction temperature − 175 °C Ts = 60 °C; note 1 THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering point CONDITIONS VALUE UNIT 40 K/W Ptot = 2.9 W; Ts = 60 °C; note 1 Note to the “Limiting values” and “Thermal characteristics” 1. Ts is the temperature at the soldering point of the collector pin. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V(BR)CBO collector-base breakdown voltage open emitter; IC = 0.5 mA 16 − V V(BR)CEO collector-emitter breakdown voltage open base; IC = 10 mA 8 − V V(BR)EBO emitter-base breakdown voltage open collector; IE = 0.1 mA 2.5 − V mA ICES collector leakage current VCE = 8 V; VBE = 0 − 0.1 hFE DC current gain VCE = 5 V; IC = 100 mA 25 − Cc collector capacitance VCB = 4.8 V; IE = ie = 0; f = 1 MHz − 7 pF Cre feedback capacitance VCE = 4.8 V; IC = 0; f = 1 MHz − 5 pF 1996 Feb 06 3 Philips Semiconductors Preliminary specification UHF power transistor BLT71/8 APPLICATION INFORMATION RF performance at Ts ≤ 60 °C in a common emitter test circuit (note 1). MODE OF OPERATION f (MHz) VCE (V) ICQ (mA) PL (W) CW, class-AB 900 4.8 3 1.2 ηC (%) Gp (dB) ≥11 ≥55 typ. 13 typ. 63 Note 1. Ts is the temperature at the soldering point of the collector pin. Ruggedness in class-AB operation The BLT71/8 is capable of withstanding a load mismatch corresponding to VSWR = 6 : 1 through all phases under the following conditions: f = 900 MHz; VCE = 6.5 V; ICQ = 3 mA; PL = 1.2 W; Ts ≤ 60 °C. MGD192 MGD191 80 16 Gp (dB) handbook, halfpage ηC 2.0 PL (W) handbook, halfpage ηC (%) 1.6 12 Gp 60 1.2 40 8 0.8 20 4 0.4 0 0 0.4 0.8 1.2 0 1.6 2.0 PL (W) 0 0 f = 900 MHz; VCE = 4.8 V; ICQ = 3 mA; Ts ≤ 60 °C. Fig.2 100 150 200 PIN (mW) f = 900 MHz; VCE = 4.8 V; ICQ = 3 mA; Ts ≤ 60 °C. Power gain and collector efficiency as functions of load power; typical values. 1996 Feb 06 50 Fig.3 4 Load power as a function of input power; typical values. Philips Semiconductors Preliminary specification UHF power transistor BLT71/8 MGD194 MGD193 10 ZL (Ω) 15 handbook, halfpage handbook, halfpage Zi (Ω) ri 8 RL 10 6 5 xi 4 XL 0 2 −5 800 850 900 f (MHz) 0 800 950 850 900 f (MHz) VCE = 4.8 V; ICQ = 3 mA; PL = 1.2 W; Tamb = 25 °C. VCE = 4.8 V; ICQ = 3 mA; PL = 1.2 W; Tamb = 25 °C. Fig.4 Fig.5 Input impedance as a function of frequency (series components); typical values. Load impedance as a function of frequency (series components); typical values. MGD195 16 23.4 handbook, halfpage handbook, halfpage Gp (dB) 12 8 Zi ZL 4 0 850 900 950 f (MHz) Zi 1000 VCE = 4.8 V; ICQ = 3 mA; PL = 1.2 W; Tamb = 25 °C. Fig.6 1996 Feb 06 ZL MGD196 Dimensions in mm. Power gain as a function of frequency (series components); typical values. Fig.7 5 950 RF test print and definition of transistor impedance. Philips Semiconductors Preliminary specification UHF power transistor BLT71/8 PACKAGE OUTLINE 4.0 3.8 5.0 4.8 handbook, full pagewidth S A 6.2 5.8 0.1 S 0.7 0.3 5 8 0.7 0.6 1.45 1.25 1 4 1.0 0.5 0.25 0.10 pin 1 index detail A 1.27 0.49 0.36 0.25 M (8x) Dimensions in mm. Fig.8 SOT96-1. 1996 Feb 06 6 1.75 1.35 0.25 0.19 0 to 8 MBC180 - 1 o Philips Semiconductors Preliminary specification UHF power transistor BLT71/8 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Feb 06 7