ETC HAT2099H

HAT2099H
Silicon N Channel Power MOS FET
Power Switching
ADE-208-1432C (Z)
4th. Edition
Aug. 2002
Features
• Capable of 4.5 V gate drive
• Low drive current
• High density mounting
• Low on-resistance
RDS(on) = 2.9 mΩ typ. (at VGS = 10 V)
Outline
LFPAK
5
5
D
4
G
3
1 2
4
1, 2, 3 Source
4
Gate
5
Drain
S S S
1 2 3
HAT2099H
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
30
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
50
A
200
A
Drain peak current
ID(pulse)
Body-drain diode reverse drain current
IDR
Avalanche current
IAP
Avalanche energy
EAR
Note1
Note 3
Note 3
Note2
50
A
5
A
2.5
mJ
30
W
Channel dissipation
Pch
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to + 150
°C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Rev.3, Aug. 2002, page 2 of 10
HAT2099H
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V(BR)DSS
30
—
—
V
ID = 10 mA, VGS = 0
Gate to source breakdown voltage
V(BR)GSS
± 20
—
—
V
IG = ±100 µA, VDS = 0
Gate to source leak current
IGSS
—
—
± 10
µA
VGS = ±16 V, VDS = 0
Zero gate voltage drain current
IDSS
—
—
1
µA
VDS = 30 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
1.0
—
2.5
V
VDS = 10 V, I D = 1 mA
Static drain to source on state
RDS(on)
—
2.9
3.7
mΩ
ID = 25 A, VGS = 10 V
resistance
RDS(on)
—
5.0
7.3
mΩ
ID = 25 A, VGS = 4.5 V
Forward transfer admittance
|yfs|
39
65
—
S
ID = 25 A, VDS = 10 V
Input capacitance
Ciss
—
4750
—
pF
VDS = 10 V
Output capacitance
Coss
—
1180
—
pF
VGS = 0
Reverse transfer capacitance
Crss
—
650
—
pF
f = 1 MHz
Total gate charge
Qg
—
75
—
nc
VDD = 10 V
Gate to source charge
Qgs
—
16
—
nc
VGS = 10 V
Gate to drain charge
Qgd
—
14
—
nc
ID = 50 A
Turn-on delay time
td(on)
—
26
—
ns
VGS = 10 V, ID = 25 A
Rise time
tr
—
60
—
ns
VDD ≅ 10 V
Turn-off delay time
td(off)
—
85
—
ns
RL = 0.4 Ω
Fall time
tf
—
26
—
ns
Rg = 4.7 Ω
Body–drain diode forward voltage
VDF
—
0.85
0.98
V
IF = 50 A, VGS = 0
—
60
—
ns
IF = 50 A, VGS = 0
diF/ dt = 50 A/ µs
Body–drain diode reverse recovery trr
time
Note3
Note3
Note3
Note3
Notes: 3. Pulse test
Rev.3, Aug. 2002, page 3 of 10
HAT2099H
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
I D (A)
500
30
Drain Current
Channel Dissipation
Pch (W)
40
20
10
100
PW
10
50
100
Case Temperature
1m
Op
=1
s
era
0m
s
tio
n
1 Operation in
this area is
limited by R DS(on)
0.1
150
200
Tc (°C)
0.01
0.1 0.3
1
3
10
30
100
Drain to Source Voltage V DS (V)
Typical Output Characteristics
V DS = 10 V
Pulse Test
Pulse Test
3.5 V
(A)
40
Typical Transfer Characteristics
50
10 V
4.5 V
ID
50
30
Drain Current
I D (A)
DC
Tc = 25°C
1 shot Pulse
0
Drain Current
10
µ
0µ s
s
10
20
VGS = 3 V
10
0
2
4
6
Drain to Source Voltage
Rev.3, Aug. 2002, page 4 of 10
8
V DS (V)
10
40
30
20
25°C
Tc = 75°C
-25°C
10
0
1
2
3
Gate to Source Voltage
5
4
V GS (V)
HAT2099H
0.16
0.08
I D = 20 A
0.04
Static Drain to Source on State Resistance
R DS(on) (m Ω)
0
10 A
5A
4
8
12
Gate to Source Voltage
16
20
V GS (V)
Static Drain to Source on State Resistance
vs. Temperature
20
Pulse Test
16
12
I D = 5 A, 10 A 20 A
8
V GS = 4.5 V
4
0
-40
10 V
Drain to Source On State Resistance
R DS(on) (m Ω)
0.12
Pulse Test
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
50
5 A, 10 A, 20 A
0
40
80
120
160
Case Temperature Tc (°C)
20
10
VGS = 4.5 V
5
10 V
2
1
0.1 0.2 0.5 1 2
5 10 20 50 100
Drain Current I D (A)
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
V DS(on) (V)
0.20
Drain to Source Voltage
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
100
Tc = -25°C
30
75°C
10
25°C
3
1
0.3
0.1
0.1
V DS = 10 V
Pulse Test
0.3
1
3
10
30
100
Drain Current I D (A)
Rev.3, Aug. 2002, page 5 of 10
HAT2099H
Body-Drain Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain to Source Voltage
10000
Ciss
500
Capacitance C (pF)
Reverse Recovery Time trr (ns)
1000
200
100
50
20
10
0.1
3000
1000
Coss
300
Crss
di / dt = 50 A / µs
V GS = 0, Ta = 25°C
100
30
VGS = 0
f = 1 MHz
10
0.3
1
3
10
30
100
Reverse Drain Current I DR (A)
0
10
30
16
V DD = 25 V
10 V
5V
V DS
20
10
0
12
8
V DD = 25 V
10 V
5V
40
80
120
160
Gate Charge Qg (nc)
Rev.3, Aug. 2002, page 6 of 10
4
0
200
Switching Time t (ns)
40
V GS (V)
V GS
40
50
Switching Characteristics
500
20
Gate to Source Voltage
V DS (V)
Drain to Source Voltage
I D = 50 A
30
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics
50
20
200
t d(off)
100
tf
50
20
10
tr
t d(on)
V GS = 10 V , VDS = 10 V
Rg = 4.7 Ω, duty < 1 %
5
0.1 0.2 0.5 1
2 5 10 20 50 100
Drain Current I D (A)
HAT2099H
40
Repetitive Avalanche Energy E AR(mJ)
(A)
50
Reverse Drain Current I F
Maximum Avalanche Energy vs.
Channel Temperature Derating
Reverse Drain Current vs.
Source to Drain Voltage
10 V
V GS = 0
5V
30
20
10
Pulse Test
0
0.4
0.8
1.2
Source to Drain Voltage
1.6
2.0
5
I AP = 5A
V DD = 15 V
duty < 0.1 %
Rg > 50 Ω
4
3
2
1
0
25
V SDF (V)
50
75
100
125
150
Channel Temperature Tch (˚C)
Avalanche Test Circuit
V DS
Monitor
Avalanche Waveform
EAR =
L
1
2
I AP
Monitor
L • IAP2 •
VDSS
VDSS - V DD
V (BR)DSS
I AP
Rg
D. U. T
V DS
VDD
ID
Vin
15 V
50Ω
0
VDD
Rev.3, Aug. 2002, page 7 of 10
HAT2099H
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ s (t)
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
θ ch - c(t) = γs (t) · θ ch - c
θ ch - c = 4.17°C/ W, Tc = 25°C
0.1
0.05
0.03
PDM
0.02
1
0.0
D=
e
uls
PW
p
ot
T
h
0.01
10 µ
1s
PW
T
100 µ
1m
10 m
100 m
1
10
Pulse Width PW (s)
Switching Time Test Circuit
Switching Time Waveform
Vout
Monitor
Vin Monitor
Rg
90%
D.U.T.
RL
Vin
Vin
10 V
V DS
= 10 V
Vout
10%
10%
90%
td(on)
Rev.3, Aug. 2002, page 8 of 10
tr
10%
90%
td(off)
tf
HAT2099H
Package Dimensions
As of January, 2002
Unit: mm
4.9
5.3 Max
4.0 ± 0.2
+0.05
1.0
4.2
6.1 –0.3
+0.1
3.95
5
4
0˚ – 8˚
+0.25
+0.05
0.20 –0.03
0.6 –0.20
1.3 Max
1
1.1 Max
+0.03
0.07 –0.04
3.3
0.25 –0.03
0.75 Max
1.27
0.10
0.40 ± 0.06
0.25 M
Hitachi Code
JEDEC
JEITA
Mass (reference value)
LFPAK
—
—
0.080 g
Rev.3, Aug. 2002, page 9 of 10
HAT2099H
Disclaimer
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intellectual property rights, in connection with use of the information contained in this document.
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received the latest product standards or specifications before final design, purchase or use.
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contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
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products.
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Copyright © Hitachi, Ltd., 2002. All rights reserved. Printed in Japan.
Colophon 6.0
Rev.3, Aug. 2002, page 10 of 10