High Performance Isolated Collector Silicon Bipolar Transistor Technical Data HBFP-0450 Features • Ideal for High Performance, Medium Power, and Low Noise Applications 4-lead SC-70 (SOT-343) Surface Mount Plastic Package • Typical Performance at 1.8 GHz Low Noise Application Noise Figure of 1.2 dB, Associated Gain of 13 dB, and P1dB of 11 dBm at 2 V and 10 mA • Miniature 4-lead SC-70 (SOT-343) Plastic Package • Transition Frequency fT = 25 GHz Pin Configuration Base Emitter 08x Medium Power Application P1dB of 19 dBm, Noise Figure of 1.7 dB, and Associated Gain of 15 dB at 3 V and 50 mA Emitter Description Agilent’s HBFP-0450 is a high performance isolated collector silicon bipolar junction transistor housed in a 4-lead SC-70 (SOT-343) surface mount plastic package. This product is based on a 25 GHz transition frequency fabrication process, which enables the products to be used for high performance, medium power, low noise applications up to 6 GHz. Applications • Driver amplifier for Cellular and PCS base stations Collector Note: Package marking provides orientation and identification. 08 = Device code x = Date code character. A new character is assigned for each month, year • Driver amplifier and medium power amplifier for Cellular and PCS handsets • High dynamic range LNA for ISM, wireless data, and WLL applications • Oscillator, mixer, and LO Buffer applications 2 HBFP-0450 Absolute Maximum Ratings Symbol VEBO VCBO VCEO IC PT Tj TSTG Parameter Units Absolute Maximum[1] V V V mA mW °C °C 1.5 15.0 4.5 100 450 150 -65 to 150 Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Collector Current Power Dissipation [2] Junction Temperature Storage Temperature Thermal Resistance: θ jc = 180°C/W Notes: 1. Operation of this device above any one of these parameters may cause permanent damage. 2. PT due to Maximum Ratings. 3. Thermal resistance measured using Liquid Crystal Measurement method. Electrical Specifications, TC = 25°C Symbol Parameters and Test Conditions DC Characteristics BVCEO Collector-Emitter Breakdown Voltage I CBO Collector-Cutoff Current I EBO Emitter-Base Cutoff Current hFE DC Current Gain RF Characteristics P-1dB Power Output at 1 dB Compression Point IC = 1 mA, open base Units Min. V 4.5 Typ. VCB = 5 V, IE = 0 nA 500 VEB = 1.5 V, IC = 0 µA 100 VCE = 2 V, IC = 20 mA — IC = 50 mA, VCE = 3 V, f = 1.8 GHz IC = 50 mA, VCE = 2 V, f = 1.8 GHz dB 50 80 3rd Order Intercept Pt at Output IC = 50 mA, VCE = 3 V, f = 1.8 GHz dBm 29 G -1dB Gain at 1 dB Compression Point IC = 50 mA, VCE = 3 V, f = 1.8 GHz dBm IC = 50 mA, VCE = 2 V, f = 1.8 GHz 16 15.5 FMIN Minimum Noise Figure IC = 50 mA, VCE = 3 V, f = 1.8 GHz IC = 50 mA, VCE = 2 V, f = 1.8 GHz dB 1.7 1.8 Ga Associated Gain IC = 50 mA, VCE = 3 V, f = 1.8 GHz IC = 50 mA, VCE = 2 V, f = 1.8 GHz dB 15 14.5 NF Minimum Noise Figure IC = 10 mA, VCE = 2 V, f = 1.8 GHz IC = 20 mA, VCE = 2 V, f = 1.8 GHz dB 1.2 1.3 IC = 10 mA, VCE = 2 V, f = 1.8 GHz IC = 20 mA, VCE = 2 V, f = 1.8 GHz dB P-1dB Associated Gain Power Output at 1 dB Compression Point IC = 10 mA, VCE = 2 V, f = 1.8 GHz dBm IC = 20 mA, VCE = 2 V, f = 1.8 GHz 150 19 17 IP 3 Ga Max. 13.0 13 14 11 14 1.7 3 HBFP-0450 Typical Performance 20 4.0 18 3.5 Fmin (dB) 3.0 2.5 2.0 1.5 10 mA 20 mA 50 mA 70 mA 1.0 0.5 0 0 2 4 6 8 3.5 10 mA 20 mA 50 mA 70 mA 16 14 3.0 2.5 Fmin (dB) ASSOCIATED GAIN (dB) 4.5 12 10 8 6 1.5 1V 2V 3V 1.0 4 0.5 2 0 0 2 0 10 4 8 6 2 0 10 FREQUENCY (GHz) FREQUENCY (GHz) Figure 1. Minimum Noise Figure vs. Frequency and Collector Current at 2 V. 4 8 6 10 FREQUENCY (GHz) Figure 2. Associated Gain vs. Frequency and Collector Current at 2 V. Figure 3. Minimum Noise Figure vs. Frequency and Voltage at 20 mA. 5 20 20 18 1V 2V 3V 16 4 Fmin (dB) 14 12 10 8 3 2 0.9 GHz 1.8 GHz 2.5 GHz 4 GHz 6 GHz 6 4 1 2 0 0 0 2 4 6 8 FREQUENCY (GHz) Figure 4. Associated Gain vs. Frequency and Voltage at 20 mA. 10 ASSOCIATED GAIN (dB) 18 ASSOCIATED GAIN (dB) 2.0 16 14 0.9 GHz 1.8 GHz 2.5 GHz 4 GHz 6 GHz 12 10 8 6 4 2 0 0 20 40 60 80 100 120 140 COLLECTOR CURRENT (mA) Figure 5. Minimum Noise Figure vs. Collector Current at 2 V. 0 20 40 60 80 100 120 140 COLLECTOR CURRENT (mA) Figure 6. Associated Gain vs. Collector Current at 2 V. 4 P1dB (dBm) P1dB (dBm) 15 10 0.9 1.8 3 4 5 6 5 25 25 20 20 60 15 45 10 30 5 15 15 10 20 mA 50 mA 80 mA 5 0 Pout (dBm) & GAIN (dB) 20 0 0 20 40 60 80 Pout @ 900 Ic @ 900 Gain @ 1800 Gain @ 900 Pout @ 1800 Ic @ 1800 100 1 0 COLLECTOR CURRENT (mA) 2 0 -15 3 -11 -7 VOLTAGE (V) Figure 7. P1 dB vs. Collector Current and Frequency. -3 1 5 9 75 Ic (mA) HBFP-0450 Typical Performance, continued 0 13 Pin (dBm) Figure 8. P1dB vs. Voltage at 1.8 GHz. Figure 9. Pout (dBm), Gain (dB), and Ic (mA) vs. Pin (dBm) at 2 V, 50 mA. 900 MHz: ΓS: Mag: 0.68, Ang: 121°; ΓL: Mag: 0.38, Ang: 171° 1800 MHz: ΓS: Mag: 0.44, Ang: 158°; ΓL: Mag: 0.28, Ang: 159° 60 30 20 40 10 0 -15 20 -11 -7 -3 1 5 9 0 13 Pin (dBm) Figure 10. Pout (dBm), Gain (dB), and Ic (mA) vs. Pin (dBm) at 3 V, 80 mA. ΓS: Mag: 0.72, Ang: 169° ΓL: Mag: 0.26, Ang: 168° POWER GAIN (dB) 80 Ic (mA) Pout (dBm) & GAIN (dB) 40 30 30 25 25 20 1 GHz 2 GHz 15 3 GHz 4 GHz 10 5 GHz POWER GAIN (dB) Pout @ 1800 100 Gain @ 1800 Ic @ 1800 50 1 GHz 20 2 GHz 3 GHz 15 4 GHz 10 5 GHz 6 GHz 5 6 GHz 5 0 -5 0 0 30 60 90 120 150 COLLECTOR CURRENT (mA) Figure 11. Power Gain vs. Collector Current and Frequency at 2 V. 0 1 2 3 4 VOLTAGE (V) Figure 12. Power Gain vs. Voltage and Frequency at 50 mA. 5 5 HBFP-0450 Typical Scattering Parameters, VCE = 2 V, IC = 10 mA S21 S11 Freq. GHz Mag Ang 0.1 0.5 0.9 1.0 1.5 1.8 2.0 2.5 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 0.74 0.73 0.71 0.71 0.72 0.73 0.73 0.74 0.74 0.75 0.76 0.79 0.81 0.84 0.85 0.87 -39 -128 -161 -166 175 167 162 150 140 120 102 83 65 49 35 20 S12 dB Mag Ang dB Mag Ang Mag Ang 26.20 20.68 16.16 15.29 11.85 10.26 9.37 7.46 5.94 3.67 1.97 0.47 -1.00 -2.33 -3.47 -4.45 20.409 10.813 6.425 5.816 3.913 3.260 2.941 2.360 1.981 1.526 1.255 1.055 0.891 0.765 0.671 0.599 157 107 87 83 68 60 55 44 34 14 -5 -25 -43 -60 -75 -91 -31.37 -22.85 -21.83 -21.72 -20.92 -20.45 -20.18 -19.33 -18.56 -17.02 -15.65 -14.70 -14.07 -13.64 -13.19 -12.84 0.027 0.072 0.081 0.082 0.090 0.095 0.098 0.108 0.118 0.141 0.165 0.184 0.198 0.208 0.219 0.228 71 33 24 23 20 19 19 17 15 8 -2 -15 -28 -40 -53 -67 0.93 0.53 0.37 0.35 0.31 0.30 0.30 0.30 0.30 0.31 0.33 0.37 0.43 0.48 0.52 0.55 -26 -90 -122 -129 -154 -165 -172 175 164 146 126 106 88 72 57 40 HBFP-0450 Noise Parameters: VCE = 2 V, IC = 10 mA Γopt Freq. Fmin GHz dB Mag 0.5 0.9 1.5 1.8 2.0 2.5 3.0 4.0 5.0 6.0 0.80 0.91 1.08 1.15 1.21 1.36 1.51 1.8 2.09 2.39 0.36 0.38 0.41 0.46 0.48 0.53 0.59 0.65 0.70 0.73 S22 RN /50 Ga Ang — dB 124 140 160 177 -178 -162 -150 -127 -106 -85 0.24 0.16 0.08 0.05 0.05 0.06 0.09 0.25 0.55 1.09 22.7 18.4 14.7 13.5 12.6 10.9 9.6 7.6 6.2 5.0 Note: RN represents normalized noise resistance. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the base lead, the output reference plane is at the end of the collector lead. S and noise parameters include the effect of four plated through via holes connecting emitter landing pads on the top of test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each emitter lead contact point, one via on each side of that point. 100 10 1 IPG MSG/MAG 0.1 1.00E+08 1.00E+09 FREQUENCY 1.00E+10 Figure 13. HBFP-0450 Power Gain at 2 V, 10 mA. 6 HBFP-0450 Typical Scattering Parameters, VCE = 2 V, IC = 20 mA S21 S11 Freq. GHz Mag Ang 0.1 0.5 0.9 1.0 1.5 1.8 2.0 2.5 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 0.64 0.70 0.70 0.70 0.71 0.72 0.73 0.73 0.74 0.74 0.76 0.78 0.81 0.83 0.85 0.87 -53 -144 -170 -174 169 162 157 147 137 118 100 82 64 48 34 19 S12 dB Mag Ang dB Mag Ang Mag Ang 29.07 21.90 17.10 16.20 12.69 11.09 10.18 8.26 6.73 4.46 2.75 1.23 -0.23 -1.54 -2.64 -3.58 28.415 12.449 7.159 6.455 4.308 3.584 3.23 2.589 2.171 1.672 1.373 1.152 0.974 0.838 0.738 0.662 153 101 84 80 67 60 55 45 35 16 -3 -22 -40 -56 -72 -88 -32.04 -24.88 -23.61 -23.35 -21.94 -21.11 -20.63 -19.41 -18.34 -16.48 -15.09 -14.11 -13.60 -13.23 -12.88 -12.58 0.025 0.057 0.066 0.068 0.080 0.088 0.093 0.107 0.121 0.150 0.176 0.197 0.209 0.218 0.227 0.235 67 33 30 30 30 29 29 26 23 13 1 -13 -27 -40 -53 -67 0.89 0.49 0.38 0.37 0.35 0.35 0.35 0.36 0.37 0.38 0.39 0.43 0.48 0.52 0.55 0.58 -35 -110 -143 -149 -172 -179 173 161 152 134 115 96 79 65 49 33 HBFP-0450 Noise Parameters: VCE = 2 V, I C = 20 mA Γopt Freq. Fmin GHz dB Mag 0.5 0.9 1.0 1.5 1.8 2.0 2.5 3.0 4.0 5.0 6.0 0.97 1.07 1.10 1.22 1.3 1.34 1.47 1.6 1.87 2.12 2.37 0.33 0.37 0.38 0.45 0.49 0.50 0.55 0.59 0.64 0.68 0.73 S22 RN /50 Ga Ang — dB 152 165 168 -178 -167 -164 -152 -142 -121 -102 -83 0.19 0.13 0.12 0.08 0.06 0.06 0.08 0.12 0.29 0.57 1.04 24.1 19.6 18.8 15.6 14.3 13.5 11.7 10.2 8.1 6.6 5.5 S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the base lead, the output reference plane is at the end of the collector lead. S and noise parameters include the effect of four plated through via holes connecting emitter landing pads on the top of test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each emitter lead contact point, one via on each side of that point. 100 Note: RN represents normalized noise resistance. IPG MSG/MAG 10 1 1.00E+08 1.00E+09 FREQUENCY 1.00E+10 Figure 14. HBFP-0450 Power Gain at 2 V, 20 mA. 7 HBFP-0450 Typical Scattering Parameters, VCE = 2 V, IC = 50 mA S21 S11 Freq. GHz Mag Ang 0.1 0.5 0.9 1.0 1.5 1.8 2.0 2.5 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 0.54 0.69 0.70 0.71 0.72 0.73 0.73 0.74 0.74 0.75 0.76 0.78 0.81 0.83 0.85 0.86 -74 -156 -178 179 165 158 154 144 134 116 99 81 63 48 33 19 S12 dB Mag Ang dB Mag Ang Mag Ang 31.05 22.41 17.44 16.53 12.98 11.38 10.47 8.55 7.02 4.76 3.05 1.52 0.06 -1.24 -2.30 -3.24 35.689 13.198 7.450 6.707 4.456 3.705 3.337 2.675 2.245 1.730 1.421 1.191 1.007 0.867 0.767 0.689 147 97 81 78 66 59 55 45 36 17 -1 -20 -38 -54 -69 -85 -33.15 -26.56 -24.88 -24.44 -22.38 -21.41 -20.72 -19.25 -18.06 -16.08 -14.66 -13.72 -13.23 -12.92 -12.62 -12.40 0.022 0.047 0.057 0.060 0.076 0.085 0.092 0.109 0.125 0.157 0.185 0.206 0.218 0.226 0.234 0.240 63 36 37 38 38 37 36 32 28 16 2 -12 -27 -40 -54 -68 0.84 0.48 0.42 0.41 0.41 0.41 0.42 0.42 0.43 0.44 0.45 0.49 0.53 0.57 0.60 0.61 -45 -128 -159 -164 178 169 164 154 145 127 109 90 74 60 45 29 HBFP-0450 Noise Parameters: VCE = 2 V, I C = 50 mA Γopt Freq. Fmin GHz dB Mag 0.5 0.9 1.0 1.5 1.8 2.0 2.5 3.0 4.0 5.0 6.0 1.46 1.56 1.58 1.70 1.78 1.81 1.94 2.07 2.31 2.57 2.82 0.43 0.48 0.50 0.54 0.58 0.59 0.62 0.64 0.68 0.71 0.74 S22 RN /50 Ga Ang — dB -176 -170 -167 -160 -153 -151 -141 -133 -114 -96 -78 0.18 0.14 0.13 0.10 0.09 0.11 0.16 0.23 0.48 0.85 1.46 24.7 20.1 19.3 16.1 14.7 13.9 12.0 10.6 8.4 6.8 5.6 S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the base lead, the output reference plane is at the end of the collector lead. S and noise parameters include the effect of four plated through via holes connecting emitter landing pads on the top of test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each emitter lead contact point, one via on each side of that point. 100 Note: RN represents normalized noise resistance. IPG MSG/MAG 10 1 1.00E+08 1.00E+09 FREQUENCY 1.00E+10 Figure 15. HBFP-0450 Power Gain at 2 V, 50 mA. 8 HBFP-0450 Typical Scattering Parameters, VCE = 3 V, IC = 50 mA S21 S11 Freq. GHz Mag Ang 0.1 0.5 0.9 1.0 1.5 1.8 2.0 2.5 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 0.53 0.66 0.68 0.68 0.70 0.70 0.71 0.71 0.72 0.71 0.72 0.75 0.78 0.80 0.83 0.84 -66 -152 -176 -180 165 158 153 143 134 116 97 79 61 46 31 17 S12 dB Mag Ang dB Mag Ang Mag Ang 31.15 23.12 18.27 17.36 13.77 12.15 11.23 9.30 7.77 5.50 3.80 2.28 0.84 -0.43 -1.47 -2.43 36.115 14.327 8.197 7.376 4.879 4.050 3.645 2.919 2.446 1.883 1.548 1.300 1.101 0.952 0.844 0.756 150 99 82 79 67 60 56 46 37 19 0 -19 -36 -52 -68 -83 -33.98 -26.74 -24.88 -24.44 -22.38 -21.31 -20.72 -19.25 -17.99 -15.92 -14.42 -13.47 -12.92 -12.51 -12.15 -11.90 0.020 0.046 0.057 0.060 0.076 0.086 0.092 0.109 0.126 0.160 0.190 0.212 0.226 0.237 0.247 0.254 64 39 39 39 40 39 38 34 30 18 4 -10 -25 -38 -52 -66 0.85 0.47 0.39 0.38 0.36 0.36 0.36 0.37 0.38 0.39 0.40 0.43 0.48 0.52 0.54 0.57 -39 -117 -147 -153 -174 176 171 160 150 133 114 96 79 65 51 35 HBFP-0450 Noise Parameters: VCE = 3 V, I C = 50 mA Γopt Freq. Fmin GHz dB Mag 0.5 0.9 1.8 2.0 2.5 3.0 4.0 5.0 6.0 1.32 1.44 1.70 1.76 1.90 2.03 2.33 2.61 2.89 0.43 0.48 0.61 0.60 0.61 0.64 0.66 0.69 0.73 S22 RN /50 Ga Ang — dB 180 -172 -151 -149 -139 -130 -112 -93 -75 0.13 0.10 0.09 0.11 0.17 0.24 0.50 0.88 1.49 25.8 20.9 15.3 14.4 12.5 11.0 8.6 7.0 5.8 S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the base lead, the output reference plane is at the end of the collector lead. S and noise parameters include the effect of four plated through via holes connecting emitter landing pads on the top of test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each emitter lead contact point, one via on each side of that point. Note: RN represents normalized noise resistance. 100 IPG MSG/MAG 10 1 1.00E+08 1.00E+09 FREQUENCY 1.00E+10 Figure 16. HBFP-0450 Power Gain at 3 V, 50 mA. 9 HBFP-0450 Typical Scattering Parameters, VCE = 3 V, IC = 80 mA S21 S11 Freq. GHz Mag Ang 0.1 0.5 0.9 1.0 1.5 1.8 2.0 2.5 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 0.44 0.63 0.65 0.65 0.68 0.68 0.71 0.72 0.72 0.72 0.72 0.75 0.78 0.80 0.83 0.84 -72 -155 -174 -177 171 166 152 142 133 115 97 78 61 45 31 16 S12 dB Mag Ang dB Mag Ang Mag Ang 31.13 23.14 18.52 17.68 14.06 12.34 11.19 9.26 7.73 5.47 3.77 2.25 0.80 -0.45 -1.48 -2.45 36.031 14.355 8.429 7.659 5.045 4.139 3.628 2.905 2.436 1.877 1.543 1.295 1.097 0.949 0.843 0.754 150 100 84 81 69 64 56 46 37 19 0 -18 -36 -52 -67 -83 -34.42 -27.33 -24.88 -24.29 -22.16 -21.11 -20.63 -19.17 -17.92 -15.81 -14.33 -13.39 -12.84 -12.43 -12.08 -11.87 0.019 0.043 0.057 0.061 0.078 0.088 0.093 0.11 0.127 0.162 0.192 0.214 0.228 0.239 0.249 0.255 65 42 43 44 44 44 39 35 31 19 5 -10 -25 -38 -52 -66 0.84 0.46 0.40 0.39 0.36 0.36 0.38 0.39 0.39 0.40 0.42 0.44 0.49 0.53 0.55 0.58 -39 -116 -144 -150 -178 175 169 158 149 131 113 95 78 64 50 34 HBFP-0450 Noise Parameters: VCE = 3 V, I C = 80 mA Γopt Freq. Fmin GHz dB Mag 0.5 0.9 1.0 1.5 1.8 2.0 2.5 3.0 4.0 5.0 6.0 1.61 1.73 1.76 1.91 1.99 2.06 2.20 2.36 2.65 2.90 3.20 0.58 0.63 0.66 0.70 0.72 0.73 0.74 0.74 0.76 0.77 0.78 S22 RN /50 Ga Ang — dB -177 -172 -168 -162 -158 -154 -147 -136 -117 -94 -70 0.08 0.07 0.07 0.10 0.09 0.14 0.24 0.34 0.66 1.12 1.89 25.3 20.7 19.9 16.7 15.5 14.4 12.5 11.1 9.1 7.6 6.4 Note: RN represents normalized noise resistance. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the base lead, the output reference plane is at the end of the collector lead. S and noise parameters include the effect of four plated through via holes connecting emitter landing pads on the top of test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each emitter lead contact point, one via on each side of that point. 100 IPG MSG/MAG 10 1 1.00E+08 1.00E+09 FREQUENCY 1.00E+10 Figure 17. HBFP-0450 Power Gain at 3 V, 80 mA. 10 HBFP-0450 Die Model and SPICE Parameters C XX RCX R CMP12 DIODEMODELFORM R = .4 OH # DIODE MODEL # CCOX C RS=1.58036628E2 MODEL = DCS C = .24E-12 F CMP2 DIODE AREA= REGION= MODEL = DBC TEMP= AREA= REGION= MODEL=DCS TEMP= XX B CMP3 DIODE CMP1 NPNBJTSUBST RBX R CJO=4.6442578E-13 ISR= NR= TT= IKF= EG= NBV= VJ=0.6 IBVL= M=0.42 NBVL= N= FFE= FC=0.8 IS=IE-24 BV= IBV= IMAX= XTI= TNOM=21 KF= AF= R=2.099499E-1 OH C =6.227E-14 F CEOX C CMP16 DIODE TEMP= MODEL=DBE REGION= AREA= RE R AREA=10 REGION= MODEL=BJTMODEL MODEL = DBC RS= R=1.4 OH R=1 OH XX E bjt BITMODELFORM # DIODE MODEL # CJO=2.393E-13 IS=I.40507E-16 R=1.565E-1 OH RBAL R CMP10 DIODEMODELFORM RSE R CJC=1.87E-14 ISE=5E-19 MODEL = BJTMODEL NPN=yes IS=3.01E-17 PNP= CJE=9.48E-14 Diode and junction Parasitics Forward Reverse Noise EG=1.17 RB=9.30144818E-1 BF=1E6 BR=1 VJC=.6775 IRB=3.029562E-5 AF= IKF=1.4737E-1 IKR=1.1E-1 IMAX= MJC=0.3319 RBM=.01 ISC= KB= XTI=3 XCJC=4.39790997E-1 RE= NE=1.006 NC=2 AB= RC= FC=0.8 VAF=4.4E1 VAR=30.37 TNOM=21 FB= NF=1 NR=1.005 KF= TF=5.3706E-12 TR=4E-9 VJE=0.9907 XTF=20 Substrate MJE=0.5063 VTF=0.8 ISS= ITF=2.21805486E0 NS= CJS= PTF=0 VJS= XTB=0.7 MJS= APPROXOB=yes BV= IBV= IMAX= XTI= TNOM=21 KF= AF= TT= EG= VJ=0.729 M=0.44 N=1 FC=0.8 ISR= NR= IKF= NBV= IBVL= NBVL= FFE= CMP11 DIODEMODELFORM # DIODE MODEL # IS=IE-24 MODEL = DBE # BJT MODEL # BV= IBV= IMAX= XTI= TNOM=21 KF= AF= CJO=2.59257503E-13 RS= ISR= NR= TT= IKF= EG= NBV= VJ=0.8971 IBVL= M=2.292E-1 NBVL= N=1.0029 FFE= FC=0.8 This model can be used as a design tool. It has been tested on MDS for various specifications. However, for more precise and accurate design, please refer to the measured data in this data sheet. For future improvements Hewlett-Packard reserves the right to change these models without prior notice. 11 SOT343 Package Equivalent Circuit C = 0.05 pF CCBC C LLB L LT1 L LLI L L = .22 nH L = 0.2 nH L = 0.7 nH IN C = 0.80 pF C2T1 C C = 0.05 pF AGROUND C1T1 C AGROUND BASE COLLECTOR EMITTER CMP44 L LT3 L LL3 L L = 0.7 nH L = 0.5 nH L = 0.2 nH C1T3 C CCEB C LL2 L L = 0.2 nH C = 0.01 pF AGROUND C = 0.1 pF AGROUND C1T2 C LT2 L C = 0.04 pF AGROUND C2T2 C L = 0.15 nH LLE L AGROUND C = 0.144 pF CCEC C C = 0.04 pF L = 0.1 nH C2T3 C C = 0.1 pF AGROUND OUT 12 Part Number Ordering Information Part Number Devices per Reel Container Tape Orientation 100 3000 10,000 3000 antistatic bag 7" Reel 13" Reel 7" Reel none standard standard reverse HBFP-0450-BLK HBFP-0450-TR1 HBFP-0450-TR2 HBFP-0450-TR3 Package Dimensions Outline 43, SOT-343 (SC-70 4 Lead) 1.30 (0.051) BSC 1.30 (.051) REF 2.60 (.102) E 1.30 (.051) E1 0.85 (.033) 0.55 (.021) TYP 1.15 (.045) BSC e 1.15 (.045) REF D h A b TYP A1 L θ DIMENSIONS SYMBOL A A1 b C D E e h E1 L θ MAX. MIN. 1.00 (0.039) 0.80 (0.031) 0.10 (0.004) 0 (0) 0.35 (0.014) 0.25 (0.010) 0.20 (0.008) 0.10 (0.004) 2.10 (0.083) 1.90 (0.075) 2.20 (0.087) 2.00 (0.079) 0.65 (0.025) 0.55 (0.022) 0.450 TYP (0.018) 1.35 (0.053) 1.15 (0.045) 0.35 (0.014) 0.10 (0.004) 10 0 DIMENSIONS ARE IN MILLIMETERS (INCHES) C TYP 13 Device Orientation TR1, TR2 TOP VIEW 4 mm REEL 8 mm 08x 08x END VIEW 08x 08x CARRIER TAPE USER FEED DIRECTION TR3 TOP VIEW 4 mm END VIEW COVER TAPE 08x 08x 08x 8 mm 08x Tape Dimensions For Outline 4T P P2 D P0 E F W D1 t1 (CARRIER TAPE THICKNESS) K0 8° MAX. A0 DESCRIPTION 5° MAX. B0 SYMBOL SIZE (mm) SIZE (INCHES) CAVITY LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER A0 B0 K0 P D1 2.40 ± 0.10 2.40 ± 0.10 1.20 ± 0.10 4.00 ± 0.10 1.00 + 0.25 0.094 ± 0.004 0.094 ± 0.004 0.047 ± 0.004 0.157 ± 0.004 0.039 + 0.010 PERFORATION DIAMETER PITCH POSITION D P0 E 1.55 ± 0.05 4.00 ± 0.10 1.75 ± 0.10 0.061 ± 0.002 0.157 ± 0.004 0.069 ± 0.004 CARRIER TAPE WIDTH THICKNESS W t1 8.00 ± 0.30 0.259 ± 0.013 0.315 ± 0.012 0.010 ± 0.0005 DISTANCE CAVITY TO PERFORATION (WIDTH DIRECTION) F 3.50 ± 0.05 0.138 ± 0.002 CAVITY TO PERFORATION (LENGTH DIRECTION) P2 2.00 ± 0.05 0.079 ± 0.002 www.semiconductor.agilent.com Data subject to change. Copyright © 2000 Agilent Technologies, Inc. Obsoletes 5968-5434E 5988-0133EN (9/00)