Power Transistors 2SD1754, 2SD1754A Silicon NPN triple diffusion planar type Unit: mm 7.0±0.3 For power amplification with high forward current transfer ratio +0.3 1.0±0.2 10.0 –0. High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 2.3±0.2 4.6±0.4 1 2SD1754A Collector to 2SD1754 emitter voltage 2SD1754A 100 V 80 Emitter to base voltage VEBO 6 V Peak collector current ICP 6 A Collector current IC 3 A Base current IB 1 A Collector power TC=25°C dissipation Ta=25°C 15 PC Junction temperature Tj Storage temperature Tstg ■ Electrical Characteristics Parameter 2SD1754 current 2SD1754A W 150 ˚C –55 to +150 ˚C 0.75±0.1 0.5 max. 1.1±0.1 1 0.9±0.1 0 to 0.15 2 3 4.6±0.4 1:Base 2:Collector 3:Emitter I Type Package (Y) (TC=25˚C) Symbol Collector cutoff 0 to 0.15 2.5 2.3±0.2 1.3 Unit: mm V 3.0±0.2 60 VCEO 3.5±0.2 1.0 base voltage 7.0±0.3 2.0±0.2 80 VCBO Unit 2.5±0.2 2SD1754 Ratings 1.0 max. Symbol Collector to 1:Base 2:Collector 3:Emitter I Type Package 3 7.2±0.3 Parameter 2 (TC=25˚C) 10.2±0.3 ■ Absolute Maximum Ratings 0.85±0.1 0.4±0.1 1.0 ● 1.1±0.1 0.75±0.1 2.5±0.2 ● 0.8±0.2 7.2±0.3 ■ Features ● 3.5±0.2 3.0±0.2 ICBO Conditions min typ max VCB = 80V, IE = 0 100 VCB = 100V, IE = 0 100 Unit µA Collector cutoff current ICEO VCE = 40V, IB = 0 100 µA Emitter cutoff current IEBO VEB = 6V, IC = 0 100 µA VCEO IC = 25mA, IB = 0 Forward current transfer ratio hFE* VCE = 4V, IC = 0.5A Collector to emitter saturation voltage VCE(sat) IC = 2A, IB = 0.05A Transition frequency fT VCE = 12V, IC = 0.2A, f = 10MHz Collector to emitter 2SD1754 voltage 2SD1754A *h FE 60 V 80 500 1500 1 30 V MHz Rank classification Rank hFE Q P 500 to 1000 800 to 1500 1 Power Transistors 2SD1754, 2SD1754A PC — Ta IC — VCE TC=25˚C 1mA 10 5 0.8 0.7mA 0.6mA 0.6 0.5mA 0.4mA 0.4 0.3mA 0.2mA 0.2 20 40 60 80 100 120 140 160 2 4 2 6 8 10 12 0 Collector to emitter voltage VCE (V) VCE(sat) — IC hFE — IC 3000 –25˚C 0.3 0.1 0.03 0.01 0.01 0.03 0.1 0.3 1 3 25˚C 300 100 30 10 3 0.1 0.3 1 3 10 I CP t=1ms 300ms 1 10ms 0.3 3 10 30 2SD1754A 2SD1754 0.1 0.01 100 300 Collector to emitter voltage VCE 10 1000 (V) 0.1 0.3 1 3 Collector current IC (A) Rth(t) — t Thermal resistance Rth(t) (˚C/W) Non repetitive pulse TC=25˚C 0.03 30 1 0.01 0.03 10 103 IC 100 3 Area of safe operation (ASO) 30 300 Collector current IC (A) 100 1.2 1000 –25˚C 1 0.01 0.03 10 1.0 VCE=12V f=10MHz TC=25˚C 3000 TC=100˚C Transition frequency fT (MHz) 25˚C 1 0.8 fT — IC 1000 TC=100˚C 0.6 VCE=4V Forward current transfer ratio hFE 10 0.4 10000 IC/IB=40 30 3 0.2 Base to emitter voltage VBE (V) 10000 100 Collector current IC (A) Collector current IC (A) –25˚C 0 0 Ambient temperature Ta (˚C) 1 TC=100˚C 3 1 0 3 25˚C 4 0.1mA (2) 0 2 Collector current IC (A) (1) 15 5 IB=1.2mA (1) TC=Ta (2) Without heat sink (PC=1.3W) 0 Collector to emitter saturation voltage VCE(sat) (V) IC — VBE 1.0 Collector current IC (A) Collector power dissipation PC (W) 20 (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink 102 (1) (2) 10 1 10–1 10–4 10–3 10–2 10–1 1 Time t (s) 10 102 103 104 10