FSGS234R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Intersil Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both extremely low rDS(ON) and Gate Charge allowing the development of low loss Power Subsystems. Star*Power Gold FETs combine this electrical capability with total dose radiation hardness up to 100K RADs while maintaining the guaranteed performance for Single Event Effects (SEE) which the Intersil FS families have always featured. The Intersil family of Star*Power FETs includes a series of devices in various voltage, current and package styles. The portfolio consists of Star*Power and Star*Power Gold products. Star*Power FETs are optimized for total dose and rDS(ON) while exhibiting SEE capability at full rated voltage up to an LET of 37. Star*Power Gold FETs have been optimized for SEE and Gate Charge combining SEE performance to 80% of the rated voltage for an LET of 82 with extremely low gate charge characteristics. This MOSFET is an enhancement-mode silicon-gate power field effect transistor of the vertical DMOS (VDMOS) structure. It is specifically designed and processed to be radiation tolerant. The MOSFET is well suited for applications exposed to radiation environments such as switching regulation, switching converters, power distribution, motor drives and relay drivers as well as other power control and conditioning applications. As with conventional MOSFETs these Radiation Hardened MOSFETs offer ease of voltage control, fast switching speeds and ability to parallel switching devices. December 2001 Features • 11A, 250V, rDS(ON) = 0.230Ω • UIS Rated • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 82MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 5V Off-Bias • Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to I AS • Photo Current - 4.0nA Per-RAD (Si)/s Typically • Neutron - Maintain Pre-RAD Specifications for 1E13 Neutrons/cm2 - Usable to 1E14 Neutrons/cm2 Symbol D G S Packaging TO-257AA S D G Reliability screening is available as either TXV or Space equivalent of MIL-PRF-19500. Formerly available as type TA45232W. Ordering Information RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND 10K Engineering samples FSGS234D1 100K TXV FSGS234R3 100K Space FSGS234R4 ©2001 Fairchild Semiconductor Corporation CAUTION: Beryllia Warning per MIL-PRF-19500 refer to package specifications. FSGS234R Rev. B FSGS234R Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified FSGS234R UNITS Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS 250 V Drain to Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 250 V Continuous Drain Current TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID 11 A TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID 7 A Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 32 A Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±30 V TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT 50 W TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT 20 W Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.40 W/ oC Maximum Power Dissipation Single Pulsed Avalanche Current, L = 100µH, (See Test Figure) . . . . . . . . . . . . . . . . . . . . . . . . IAS 30 A Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS 11 A Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM 32 A Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL (Distance >0.063in (1.6mm) from Case, 10s Max) 300 oC 4.4 (Typical) g Weight (Typical) CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER Drain to Source Breakdown Voltage Gate Threshold Voltage SYMBOL BVDSS VGS(TH) TEST CONDITIONS ID = 1mA, VGS = 0V VGS = VDS , ID = 1mA Zero Gate Voltage Drain Current IDSS VDS = 200V, VGS = 0V Gate to Source Leakage Current IGSS VGS = ±30V Drain to Source On-State Voltage VDS(ON) Drain to Source On Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate Charge Source rDS(ON)12 td(ON) tr td(OFF) TC = -55oC TC = 25oC TC = 125oC TC = 25oC TC = 125oC TC = 25oC TC = 125oC VGS = 12V, ID = 11A ID = 7A, VGS = 12V TC = 25oC TC = 125oC TYP MAX UNITS 250 - - V - - 5.5 V 2.0 - 4.5 V 1.0 - - V - - 25 µA - - 250 µA - - 100 nA - - 200 nA - - 2.64 V - 0.195 0.230 Ω - - 0.449 Ω VDD = 125V, ID = 11A, RL = 11.4Ω, VGS = 12V, RGS = 7.5Ω - - 20 ns - - 40 ns - - 35 ns - - 30 ns VGS = 0V to 12V - 26 28 nC - 10 12 nC - 8 10 nC - 40 - nC tf Qg(12) MIN Qgs VDD = 125V, ID = 11A Gate Charge Drain Qgd Gate Charge at 20V Qg(20) VGS = 0V to 20V Qg(TH) VGS = 0V to 2V - 3 - nC ID = 11A, VDS = 15V - 7 - V Threshold Gate Charge Plateau Voltage V(PLATEAU) Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance Thermal Resistance Junction to Case ©2001 Fairchild Semiconductor Corporation VDS = 25V, VGS = 0V, f = 1MHz - 1300 - pF - 200 - pF CRSS - 8 - pF RθJC - - 2.2 oC/W FSGS234R Rev. B FSGS234R Source to Drain Diode Specifications PARAMETER SYMBOL Forward Voltage Reverse Recovery Time trr Reverse Recovery Charge TEST CONDITIONS MIN TYP MAX UNITS - - 1.2 V - - 410 ns - 2.4 - µC ISD = 11A VSD ISD = 11A, dISD/dt = 100A/µs QRR Electrical Specifications up to 100K RAD TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN MAX UNITS Drain to Source Breakdown Volts (Note 3) BVDSS VGS = 0, ID = 1mA 250 - V Gate to Source Threshold Volts (Note 3) VGS(TH) VGS = VDS, ID = 1mA 2.0 4.5 V Gate to Body Leakage (Notes 2, 3) IGSS VGS = ±30V, VDS = 0V - 100 nA Zero Gate Leakage (Note 3) IDSS VGS = 0, VDS = 200V - 25 µA Drain to Source On-State Volts (Notes 1, 3) VDS(ON) VGS = 12V, ID = 11A - 2.64 V Drain to Source On Resistance (Notes 1, 3) rDS(ON)12 VGS = 12V, ID = 7A - 0.230 Ω NOTES: 1. Pulse test, 300µs Max. 2. Absolute value. 3. Insitu Gamma bias must be sampled for both V GS = 12V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS . Single Event Effects (SEB, SEGR) Note 4 ENVIRONMENT (NOTE 5) TYPICAL LET (MeV/mg/cm) TYPICAL RANGE (µ) APPLIED VGS BIAS (V) (NOTE 6) MAXIMUM VDS BIAS (V) TEST SYMBOL ION SPECIES Single Event Effects Safe Operating Area SEESOA Br 37 36 -20 250 I 60 32 -10 250 Au 82 28 -5 200 Au 82 28 -10 150 NOTES: 4. Testing conducted at Brookhaven National Labs. 5. Fluence = 1E5 ions/cm2 (Typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). Performance Curves Unless Otherwise Specified LET = 37MeV/mg/cm2, RANGE = 36µ LET = 60MeV/mg/cm2, RANGE = 32µ LET = 82MeV/mg/cm2, RANGE = 28µ 300 280 FLUENCE = 1E5 IONS/cm2 (TYPICAL) 250 200 VDS (V) 200 VDS (V) LET = 37 BROMINE 240 150 160 120 LET = 82 GOLD 100 80 50 40 TEMP = 25oC 0 -4 LET = 60 IODINE 0 0 -8 -12 VGS (V) -16 -20 24 FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA ©2001 Fairchild Semiconductor Corporation 0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50 VGS (V) FIGURE 2. TYPICAL SEE SIGNATURE CURV E FSGS234R Rev. B FSGS234R Performance Curves Unless Otherwise Specified (Continued) 1E-3 14 ILM = 10A 10 ID , DRAIN (A) LIMITING INDUCTANCE (H) 12 1E-4 30A 1E-5 100A 300A 8 6 4 1E-6 2 1E-7 10 30 100 0 -50 1000 300 0 FIGURE 3. TYPICAL DRAIN INDUCTANCE REQUIRED TO LIMIT GAMMA DOT CURRENT TO I AS ID , DRAIN CURRENT (A) 100 50 100 150 TC , CASE TEMPERATURE (oC) DRAIN SUPPLY (V) FIGURE 4. MAXIMUM CONTINUOUS DRAIN CURRENT vs TEMPERATURE TC = 25oC 10 12V QG 100µs 1 QGD QGS 1ms VG OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 10ms 0.1 1 10 100 1000 VDS , DRAIN TO SOURCE VOLTAGE (V) CHARGE FIGURE 5. FORWARD BIAS SAFE OPERATING ARE A FIGURE 6. BASIC GATE CHARGE WAVEFORM 2.5 40 ID, DRAIN TO SOURCE CURRENT (A) PULSE DURATION = 250ms, VGS = 12V, ID = 7A NORMALIZED rDS(ON) 2.0 1.5 1.0 0.5 0.0 -80 -40 0 40 80 120 160 TJ , JUNCTION TEMPERATURE (oC) FIGURE 7. TYPICAL NORMALIZED rDS(ON) vs JUNCTION TEMPERATURE ©2001 Fairchild Semiconductor Corporation DESCENDING ORDER VGS = 14V VGS = 12V 30 VGS = 10V VGS = 8V VGS = 6V 20 10 VGS = 6 V 0 0 4 8 12 16 20 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 8. TYPICAL OUTPUT CHARACTERISTICS FSGS234R Rev. B FSGS234R NORMALIZED THERMAL RESPONSE (ZqJC) Performance Curves Unless Otherwise Specified (Continued) 101 100 0.5 10-1 0.2 0.1 0.05 0.02 0.01 SINGLE PULSE PDM 10-2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC + TC 10-3 10-5 10-4 10-3 10-2 10-1 t1 t2 100 101 t, RECTANGULAR PULSE DURATION (s) FIGURE 9. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE IAS , AVALANCHE CURRENT (A) 100 STARTING TJ = 25oC 10 STARTING TJ = 150oC 1 IF R = 0 tAV = (L) (IAS) / (1.3 RATED BVDSS - VDD) IF R ≠ 0 tAV = (L/R) ln [(IAS*R) / (1.3 RATED BVDSS - VDD) + 1] 0.1 0.01 0.1 1 10 tAV, TIME IN AVALANCHE (ms) FIGURE 10. UNCLAMPED INDUCTIVE SWITCHING Test Circuits and Waveforms ELECTRONIC SWITCH OPENS WHEN IAS IS REACHED VDS L BVDSS + CURRENT I TRANSFORMER AS tP - VARY tP TO OBTAIN REQUIRED PEAK IAS VDD DUT tP VDD + 50Ω VGS ≤ 20V 0V VDS IAS 50V-150V 50Ω tAV FIGURE 11. UNCLAMPED ENERGY TEST CIRCUIT ©2001 Fairchild Semiconductor Corporation FIGURE 12. UNCLAMPED ENERGY WAVEFORMS FSGS234R Rev. B FSGS234R Test Circuits and Waveforms (Continued) tON VDD tOFF td(ON) td(OFF) tf tr RL VDS 90% 90% VDS VGS = 12V 10% DUT 10% 0V 90% RGS 50% VGS 50% PULSE WIDTH 10% FIGURE 13. RESISTIVE SWITCHING TEST CIRCUI T FIGURE 14. RESISTIVE SWITCHING WAVEFORM S Screening Information Screening is performed in accordance with the latest revision in effect of MIL-PRF-19500, (Screening Information Table). Delta Tests and Limits (JANTXV Equivalent, JANS Equivalent) TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MAX UNITS Gate to Source Leakage Current IGSS VGS = ±30V ±20 (Note 7) nA Zero Gate Voltage Drain Current IDSS VDS = 80% Rated Value ±25 (Note 7) µA Drain to Source On Resistance rDS(ON) TC = 25oC at Rated ID ±20% (Note 8) Ω Gate Threshold Voltage VGS(TH) ID = 1.0mA ±20% (Note 8) V NOTES: 7. Or 100% of Initial Reading (whichever is greater). 8. Of Initial Reading. Screening Information TEST Unclamped Inductive Switching Thermal Response Gate Stress Pind Pre Burn-In Tests (Note 9) Steady State Gate Bias (Gate Stress) Interim Electrical Tests (Note 9) Steady State Reverse Bias (Drain Stress) PDA Final Electrical Tests (Note 9) JANTXV EQUIVALENT VGS(PEAK) = 20V, L = 0.1mH; Limit = 30A tH = 100ms; V H = 25V; IH = 1A; LIMIT = 85mV VGS = 45V, t = 250µs Optional MIL-PRF-19500 Group A, Subgroup 2 (All Static Tests at 25 oC) MIL-PRF-750, Method 1042, Condition B VGS = 80% of Rated Value, TA = 150oC, Time = 48 hours All Delta Parameters Listed in the Delta Tests and Limits Table MIL-PRF-750, Method 1042, Condition A VDS = 80% of Rated Value, TA = 150oC, Time = 160 hours 10% MIL-PRF-19500, Group A, Subgroup 2 JANS EQUIVALENT VGS(PEAK) = 20V, L = 0.1mH; Limit = 30A tH = 100ms; VH = 25V; IH = 1A; LIMIT = 85mV VGS = 45V, t = 250µs Required MIL-PRF-19500 Group A, Subgroup 2 (All Static Tests at 25oC) MIL-PRF-750, Method 1042, Condition B VGS = 80% of Rated Value, TA = 150oC, Time = 48 hours All Delta Parameters Listed in the Delta Tests and Limits Table MIL-PRF-750, Method 1042, Condition A VDS = 80% of Rated Value, TA = 150oC, Time = 240 hours 5% MIL-PRF-19500, Group A, Subgroups 2 and 3 NOTE: 9. Test limits are identical pre and post burn-in. Additional Tests PARAMETER Safe Operating Area Thermal Impedance ©2001 Fairchild Semiconductor Corporation SYMBOL SOA ∆VSD TEST CONDITIONS VDS = 200V, t = 10ms tH = 500ms; VH = 25V; IH = 1A MAX 0.30 125 UNITS A mV FSGS234R Rev. B FSGS234R Rad Hard Data Packages - Intersil Power Transistors TXV Equivalent Class S - Equivalents 1. RAD HARD TXV EQUIVALENT - STANDARD DATA PACKAGE 1. RAD HARD “S” EQUIVALENT - STANDARD DATA PACKAGE A. Certificate of Compliance A. Certificate of Compliance B. Assembly Flow Chart B. Serialization Records C. Preconditioning - Attributes Data Sheet C. Assembly Flow Chart D. Group A - Attributes Data Sheet D. SEM Photos and Report E. Group B - Attributes Data Sheet E. Preconditioning - Attributes Data Sheet - HTRB - Hi Temp Gate Stress Post Reverse Bias Data and Delta Data - HTRB - Hi Temp Drain Stress Post Reverse Bias Delta Data F. Group C - Attributes Data Sheet G. Group D - Attributes Data Sheet 2. RAD HARD TXV EQUIVALENT - OPTIONAL DATA PACKAGE A. Certificate of Compliance B. Assembly Flow Chart C. Preconditioning - Attributes Data Sheet - Pre and Post Burn-In Read and Record Data D. Group A - Attributes Data Sheet E. Group B - Attributes Data Sheet - Pre and Post Read and Record Data for Intermittent Operating Life (Subgroup B3) - Bond Strength Data (Subgroup B3) - Pre and Post High Temperature Operating Life Read and Record Data (Subgroup B6) F. Group C - Attributes Data Sheet - Pre and Post Read and Record Data for Intermittent Operating Life (Subgroup C6) - Bond Strength Data (Subgroup C6) G. Group D - Attributes Data Sheet - Pre and Post RAD Read and Record Data F. Group A G. Group B - Attributes Data Sheet H. Group C - Attributes Data Sheet I. Group D - Attributes Data Sheet 2. RAD HARD MAX. “S” EQUIVALENT - OPTIONAL DATA PACKAGE A. Certificate of Compliance B. Serialization Records C. Assembly Flow Chart D. SEM Photos and Report E. Preconditioning - Attributes Data Sheet - HTRB - Hi Temp Gate Stress Post Reverse Bias Data and Delta Data - HTRB - Hi Temp Drain Stress Post Reverse Bias Delta Data - X-Ray and X-Ray Report F. Group A - Attributes Data Sheet - Subgroups A2, A3, A4, A5 and A7 Data G. Group B - Attributes Data Sheet - Subgroups B1, B3, B4, B5 and B6 Data H. Group C - Attributes Data Sheet - Subgroups C1, C2, C3 and C6 Data I. Group D ©2001 Fairchild Semiconductor Corporation - Attributes Data Sheet - Attributes Data Sheet - Pre and Post Radiation Data FSGS234R Rev. B